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IXBF20N300价格
参考价格：￥212.3197
型号：IXBF20N300 品牌：IXYS 备注：这里有IXBF20N300多少钱，2025年最近7天走势，今日出价，今日竞价，IXBF20N300批发/采购报价，IXBF20N300行情走势销售排行榜，IXBF20N300报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IXBF20N300 | High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor Features • Silicon Chip on Direct-Copper Bond (DCB) Substrate • Isolated Mounting Surface • 4000V~ Electrical Isolation • High Blocking Voltage • High Peak Current Capability • Low Saturation Voltage Advantages • Low Gate Drive Requirement • High Power Density Applications • Switch-Mode | IXYS 艾赛斯 |   | |
IXBF20N300 | 封装/外壳：i4-Pac™-5（3 引线） 包装：卷带（TR） 描述：IGBT 3000V 34A 150W ISOPLUSI4 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | IXYS 艾赛斯 | | |
IXBF20N300 | BiMOSFET™ 超高电压 | Littelfuse 力特 | | |
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor Features ● High Blocking Voltage ● Anti-Parallel Diode ● International Standard Packages ● Low Conduction Losses Advantages ● Low Gate Drive Requirement ● High Power Density Applications: ● Switch-Mode and Resonant-Mode Power Supplies ● Uninterruptible Power Supplies (UPS) ● Laser Gener | IXYS 艾赛斯 | | ||
High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor Features • Silicon Chip on Direct-Copper Bond (DCB) Substrate • Isolated Mounting Surface • 4000V~ Electrical Isolation • High Blocking Voltage • High Frequency Operation Advantages • Low Gate Drive Requirement • High Power Density Applications • Switch-Mode and Resonant-Mode Power Suppl | IXYS 艾赛斯 | | ||
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor Features ● High Blocking Voltage ● Anti-Parallel Diode ● International Standard Packages ● Low Conduction Losses Advantages ● Low Gate Drive Requirement ● High Power Density Applications: ● Switch-Mode and Resonant-Mode Power Supplies ● Uninterruptible Power Supplies (UPS) ● Laser Gener | IXYS 艾赛斯 | | ||
High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor Features ● High Voltage Package ● High Blocking Voltage ● Anti-Parallel Diode ● Low Conduction Losses Advantages ● Low Gate Drive Requirement ● High Power Density Applications: ● Switch-Mode and Resonant-Mode Power Supplies ● Uninterruptible Power Supplies (UPS) ● Laser Generators ● Ca | IXYS 艾赛斯 | |
IXBF20N300产品属性
- 类型
描述
- 型号
IXBF20N300
- 功能描述
IGBT 3000V 27A 110W ISOPLUSI4
- RoHS
是
- 类别
分离式半导体产品 >> IGBT - 单路
- 系列
BIMOSFET™
- 标准包装
30
- 系列
GenX3™ IGBT
- 类型
PT 电压 -
- 集电极发射极击穿（最大）
1200V Vge,
- Ic时的最大Vce（开）
3V @ 15V，100A 电流 -
- 集电极(Ic)（最大）
200A 功率 -
- 最大
830W
- 输入类型
标准
- 安装类型
通孔
- 封装/外壳
TO-247-3
- 供应商设备封装
PLUS247?-3
- 包装
管件
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Littelfuse/IXYS |
24+ |
ISOPLUSi4PAK |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
IXYS |
1214/1414+ |
ISOPLUS i4-PAC-3 |
46 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
IXYS(艾赛斯) |
23+ |
N/A |
7500 |
IXYS(艾赛斯)全系列在售 |
|||
IXYS |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
LIF |
2324+ |
4000 |
原装正品,超低价出售 |
||||
IXYS |
18+ |
TO247 |
85600 |
保证进口原装可开17%增值税发票 |
|||
IXYS |
23+ |
ISOPLUS i4PAC? |
9000 |
原装正品，支持实单 |
|||
IXYS(艾赛斯) |
25+ |
封装 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
|||
IXYS/LITTELFUSE |
2015 |
I4-PAK |
15800 |
全新原装正品现货直销 |
|||
IXYS |
25+ |
i4-Pac?-5(3 引线) |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
IXBF20N300规格书下载地址
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DdatasheetPDF页码索引
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