位置：首页 > IC中文资料 > IXBL20N300C
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IXBL20N300C | HighVoltage,HighFrequency,BiMOSFETTMMonolithicBipolarMOSTransistor Features •SiliconChiponDirect-CopperBond(DCB)Substrate •IsolatedMountingSurface •4000V~ElectricalIsolation •HighBlockingVoltage •HighFrequencyOperation Advantages •LowGateDriveRequirement •HighPowerDensity Applications •Switch-ModeandResonant-ModePowerSuppl | IXYS IXYS Integrated Circuits Division |  |   |
IXBL20N300C | 封装/外壳：ISOPLUSi5-Pak™ 包装：管件 描述：IGBT 3000V 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | IXYS IXYS Integrated Circuits Division | | |
HighVoltage,HighGainBIMOSFETTMMonolithicBipolarMOSTransistor Features •SiliconChiponDirect-CopperBond(DCB)Substrate •IsolatedMountingSurface •4000V~ElectricalIsolation •HighBlockingVoltage •HighPeakCurrentCapability •LowSaturationVoltage Advantages •LowGateDriveRequirement •HighPowerDensity Applications •Switch-Mode | IXYS IXYS Integrated Circuits Division | | | |
HighVoltage,HighGainBIMOSFETTMMonolithicBipolarMOSTransistor Features ●HighBlockingVoltage ●Anti-ParallelDiode ●InternationalStandardPackages ●LowConductionLosses Advantages ●LowGateDriveRequirement ●HighPowerDensity Applications: ●Switch-ModeandResonant-ModePowerSupplies ●UninterruptiblePowerSupplies(UPS) ●LaserGener | IXYS IXYS Integrated Circuits Division | | | |
HighVoltage,HighGainBIMOSFETTMMonolithicBipolarMOSTransistor Features ●HighBlockingVoltage ●Anti-ParallelDiode ●InternationalStandardPackages ●LowConductionLosses Advantages ●LowGateDriveRequirement ●HighPowerDensity Applications: ●Switch-ModeandResonant-ModePowerSupplies ●UninterruptiblePowerSupplies(UPS) ●LaserGener | IXYS IXYS Integrated Circuits Division | | | |
HighVoltage,HighGainBIMOSFETMonolithicBipolarMOSTransistor Features ●HighVoltagePackage ●HighBlockingVoltage ●Anti-ParallelDiode ●LowConductionLosses Advantages ●LowGateDriveRequirement ●HighPowerDensity Applications: ●Switch-ModeandResonant-ModePowerSupplies ●UninterruptiblePowerSupplies(UPS) ●LaserGenerators ●Ca | IXYS IXYS Integrated Circuits Division | | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IXYS |
23+ |
ICTRANSBIPO1700VSOT-227 |
1690 |
专业代理销售半导体模块,能提供更多数量 |
|||
IXYS |
23+ |
ISOPLUSi5Pak? |
9000 |
原装正品，支持实单 |
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IXYS(艾赛斯) |
23+ |
N/A |
7500 |
IXYS(艾赛斯)全系列在售 |
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IXYS |
2022 |
SOT-227-4,miniBLOC |
58 |
原厂原装正品,价格超越代理 |
|||
IXYS |
2305+ |
原厂封装 |
5000 |
15年芯片行业经验/只供原装正品:0755-83273353邹小姐 |
|||
IXYS-艾赛斯 |
24+25+/26+27+ |
TO-247-3 |
2368 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
IXYS |
18+ |
SOT227 |
2050 |
公司大量全新原装 正品 随时可以发货 |
|||
IXYS |
22+ |
ISOPLUSi5Pak? |
9000 |
原厂渠道,现货配单 |
|||
IXYS |
23+ |
DIP18 |
6000 |
15年原装正品企业 |
|||
IXYS |
24+ |
ISOPLUSi5-Pak? |
9350 |
独立分销商,公司只做原装,诚心经营,免费试样正品保证 |
IXBL20N300C芯片相关品牌
IXBL20N300C规格书下载地址
IXBL20N300C参数引脚图相关
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IXBL20N300C数据表相关新闻
IXDD609YI
IXDD609YI
2023-10-12IXBK75N170
IXBK75N170
2022-11-24IXBH2N250
IXBH2N250
2022-11-24IXDD604SIATR
IXDD604SIATR
2022-5-27IXDD614YI
IXDD614YI，全新原装当天发货或门市自取0755-82732291.
2020-6-16IX9915N
具有350V达林顿晶体管的低压误差放大器–IX9915系列 IXYS集成电路在具有350V达林顿晶体管的误差放大器中提供多功能产品设计
2020-4-10
DdatasheetPDF页码索引
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