256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM

DESCRIPTION TheISSIIS62WV25616ALL/IS62WV25616BLL are high speed, low power, 4M bit SRAMs organized as 256K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high performance and

PowerSaver™ Lower Power Asynchronous SRAM

256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM

DESCRIPTION TheISSIIS62WV25616ALL/IS62WV25616BLL are high speed, low power, 4M bit SRAMs organized as 256K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high performance and

256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM

DESCRIPTION TheISSIIS62WV25616ALL/IS62WV25616BLL are high speed, low power, 4M bit SRAMs organized as 256K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high performance and

256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM

DESCRIPTION TheISSIIS62WV25616ALL/IS62WV25616BLL are high speed, low power, 4M bit SRAMs organized as 256K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high performance and

256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM

DESCRIPTION TheISSIIS62WV25616ALL/IS62WV25616BLL are high speed, low power, 4M bit SRAMs organized as 256K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high performance and

256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM

DESCRIPTION TheISSIIS62WV25616ALL/IS62WV25616BLL are high speed, low power, 4M bit SRAMs organized as 256K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high performance and

256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM

DESCRIPTION TheISSIIS62WV25616ALL/IS62WV25616BLL are high speed, low power, 4M bit SRAMs organized as 256K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high performance and

封装/外壳：48-TFBGA 包装：托盘 描述：IC SRAM 4MBIT PARALLEL 48MINIBGA 集成电路（IC） 存储器

封装/外壳：48-TFBGA 包装：托盘 描述：IC SRAM 4MBIT PARALLEL 48MINIBGA 集成电路（IC） 存储器

256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM

DESCRIPTION TheISSIIS62WV25616ALL/IS62WV25616BLL are high speed, low power, 4M bit SRAMs organized as 256K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high performance and

256Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES  High-speed access time: 35ns, 45ns, 55ns  CMOS low power operation – Operating Current: 22 mA (max) at 85°C – CMOS Standby Current: 3.7uA (typ) at 25°C  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV25616EALL) – 2.2V-3.6V VDD (IS62/65WV25616EB

256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM

文件：373.85 Kbytes Page：17 Pages

256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM

文件：373.85 Kbytes Page：17 Pages