型号 功能描述 生产厂家&企业 LOGO 操作
IS62WV25616BLL-55BI-TR

封装/外壳:48-TFBGA 包装:托盘 描述:IC SRAM 4MBIT PARALLEL 48MINIBGA 集成电路(IC) 存储器

ETC

知名厂家

256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM

DESCRIPTION TheISSIIS62WV25616ALL/IS62WV25616BLL are high speed, low power, 4M bit SRAMs organized as 256K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high performance and

ISSI

北京矽成

256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM

DESCRIPTION TheISSIIS62WV25616ALL/IS62WV25616BLL are high speed, low power, 4M bit SRAMs organized as 256K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high performance and

ISSI

北京矽成

256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM

DESCRIPTION TheISSIIS62WV25616ALL/IS62WV25616BLL are high speed, low power, 4M bit SRAMs organized as 256K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high performance and

ISSI

北京矽成

256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM

DESCRIPTION TheISSIIS62WV25616ALL/IS62WV25616BLL are high speed, low power, 4M bit SRAMs organized as 256K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high performance and

ISSI

北京矽成

256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM

DESCRIPTION TheISSIIS62WV25616ALL/IS62WV25616BLL are high speed, low power, 4M bit SRAMs organized as 256K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high performance and

ISSI

北京矽成

IS62WV25616BLL-55BI-TR产品属性

  • 类型

    描述

  • 型号

    IS62WV25616BLL-55BI-TR

  • 功能描述

    静态随机存取存储器 4Mb 256Kx16 55ns Async 静态随机存取存储器

  • RoHS

  • 制造商

    Cypress Semiconductor

  • 存储容量

    16 Mbit

  • 组织

    1 M x 16

  • 访问时间

    55 ns

  • 电源电压-最大

    3.6 V

  • 电源电压-最小

    2.2 V

  • 最大工作电流

    22 uA

  • 最大工作温度

    + 85 C

  • 最小工作温度

    - 40 C

  • 安装风格

    SMD/SMT

  • 封装/箱体

    TSOP-48

  • 封装

    Tray

更新时间:2025-8-17 10:46:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ISSI
25+
电联咨询
7800
公司现货,提供拆样技术支持
ISSI
25+
BGA
12588
原装正品,自己库存 假一罚十
ISSI Integrated Silicon Soluti
22+
48miniBGA (6x8)
9000
原厂渠道,现货配单
ISSI/芯成
24+
TFBGA48
66500
只做全新原装进口现货
ISSI
22+
BGA
8000
原装正品支持实单
ISSI, Integrated Silicon Solut
24+
48-迷你型BGA(6x8)
56200
一级代理/放心采购
22+
5000
ISSI
1923+
BGA
7823
原装进口现货库存专业工厂研究所配单供货
ISSI
23+
TSOP44
50000
全新原装正品现货,支持订货
ISSI
22+
BGA
30000
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