型号 功能描述 生产厂家 企业 LOGO 操作
IS62WV25616BLL-55BI-TR

封装/外壳:48-TFBGA 包装:托盘 描述:IC SRAM 4MBIT PARALLEL 48MINIBGA 集成电路(IC) 存储器

ETC

知名厂家

256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM

DESCRIPTION TheISSIIS62WV25616ALL/IS62WV25616BLL are high speed, low power, 4M bit SRAMs organized as 256K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high performance and

ISSI

矽成半导体

256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM

DESCRIPTION TheISSIIS62WV25616ALL/IS62WV25616BLL are high speed, low power, 4M bit SRAMs organized as 256K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high performance and

ISSI

矽成半导体

256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM

DESCRIPTION TheISSIIS62WV25616ALL/IS62WV25616BLL are high speed, low power, 4M bit SRAMs organized as 256K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high performance and

ISSI

矽成半导体

256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM

DESCRIPTION TheISSIIS62WV25616ALL/IS62WV25616BLL are high speed, low power, 4M bit SRAMs organized as 256K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high performance and

ISSI

矽成半导体

256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM

DESCRIPTION TheISSIIS62WV25616ALL/IS62WV25616BLL are high speed, low power, 4M bit SRAMs organized as 256K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high performance and

ISSI

矽成半导体

IS62WV25616BLL-55BI-TR产品属性

  • 类型

    描述

  • 型号

    IS62WV25616BLL-55BI-TR

  • 功能描述

    静态随机存取存储器 4Mb 256Kx16 55ns Async 静态随机存取存储器

  • RoHS

  • 制造商

    Cypress Semiconductor

  • 存储容量

    16 Mbit

  • 组织

    1 M x 16

  • 访问时间

    55 ns

  • 电源电压-最大

    3.6 V

  • 电源电压-最小

    2.2 V

  • 最大工作电流

    22 uA

  • 最大工作温度

    + 85 C

  • 最小工作温度

    - 40 C

  • 安装风格

    SMD/SMT

  • 封装/箱体

    TSOP-48

  • 封装

    Tray

更新时间:2025-10-1 14:04:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ISSI
2223+
TFBGA48
26800
只做原装正品假一赔十为客户做到零风险
ISSI
25+
BGA
2112
百分百原装正品 真实公司现货库存 本公司只做原装 可
ISSI/芯成
24+
TFBGA48
60000
全新原装现货
ISSI, Integrated Silicon Solut
21+
60-TFBGA
5280
进口原装!长期供应!绝对优势价格(诚信经营
ISSI
23+
TFBGA48
50000
全新原装正品现货,支持订货
ISSI(美国芯成)
2447
miniBGA-48(6x8)
315000
480个/托盘一级代理专营品牌!原装正品,优势现货,长
ISSI,
25+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
ISSI
1923+
BGA
7823
原装进口现货库存专业工厂研究所配单供货
ISSI
23+
TSOP44
50000
全新原装正品现货,支持订货
ISSI
23+
48-迷你型BGA(6x8)
39257
专业分销产品!原装正品!价格优势!

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