型号 功能描述 生产厂家&企业 LOGO 操作
IS62WV25616BLL-55BI

256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM

DESCRIPTION TheISSIIS62WV25616ALL/IS62WV25616BLL are high speed, low power, 4M bit SRAMs organized as 256K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high performance and

ISSI

北京矽成

IS62WV25616BLL-55BI

封装/外壳:48-TFBGA 包装:托盘 描述:IC SRAM 4MBIT PARALLEL 48MINIBGA 集成电路(IC) 存储器

ETC

知名厂家

封装/外壳:48-TFBGA 包装:托盘 描述:IC SRAM 4MBIT PARALLEL 48MINIBGA 集成电路(IC) 存储器

ETC

知名厂家

256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM

DESCRIPTION TheISSIIS62WV25616ALL/IS62WV25616BLL are high speed, low power, 4M bit SRAMs organized as 256K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high performance and

ISSI

北京矽成

256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM

DESCRIPTION TheISSIIS62WV25616ALL/IS62WV25616BLL are high speed, low power, 4M bit SRAMs organized as 256K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high performance and

ISSI

北京矽成

256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM

DESCRIPTION TheISSIIS62WV25616ALL/IS62WV25616BLL are high speed, low power, 4M bit SRAMs organized as 256K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high performance and

ISSI

北京矽成

256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM

DESCRIPTION TheISSIIS62WV25616ALL/IS62WV25616BLL are high speed, low power, 4M bit SRAMs organized as 256K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high performance and

ISSI

北京矽成

IS62WV25616BLL-55BI产品属性

  • 类型

    描述

  • 型号

    IS62WV25616BLL-55BI

  • 功能描述

    静态随机存取存储器 4Mb 256Kx16 55ns Async 静态随机存取存储器

  • RoHS

  • 制造商

    Cypress Semiconductor

  • 存储容量

    16 Mbit

  • 组织

    1 M x 16

  • 访问时间

    55 ns

  • 电源电压-最大

    3.6 V

  • 电源电压-最小

    2.2 V

  • 最大工作电流

    22 uA

  • 最大工作温度

    + 85 C

  • 最小工作温度

    - 40 C

  • 安装风格

    SMD/SMT

  • 封装/箱体

    TSOP-48

  • 封装

    Tray

更新时间:2025-8-15 18:35:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ISSI
18+
TFBGA48
5000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ISSI
21+
BGA
10000
原装现货假一罚十
ISSI
24+
BGA(48)
12000
专营ISSI进口原装正品假一赔十可開17增值稅票
ISSI
2015+
BGA
3526
原装原包假一赔十
ISSI
25+23+
BGA
47607
绝对原装正品现货,全新深圳原装进口现货
ISSI
2223+
TFBGA48
26800
只做原装正品假一赔十为客户做到零风险
ISSI
22+
BGA
8000
原装正品支持实单
ISSI
1650+
?
8450
只做原装进口,假一罚十
ISSI
23+
BGA
9885
原厂授权一级代理,专业海外优势订货,价格优势、品种
ISSI
23+
48-迷你型BGA(6x8)
71890
专业分销产品!原装正品!价格优势!

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