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IS62WV12816价格
参考价格：￥14.6985
型号：IS62WV12816BLL-55B2LI 品牌：ISSI 备注：这里有IS62WV12816多少钱，2025年最近7天走势，今日出价，今日竞价，IS62WV12816批发/采购报价，IS62WV12816行情走势销售排行榜，IS62WV12816报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IS62WV12816 | 128K x 16 LOW VOLTAGE ULTRA LOW POWER CMOS STATIC RAM 文件：112.01 Kbytes Page：17 Pages | ISSI 矽成半导体 |   | |
128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 45ns, 55ns, 70ns • CMOS low power operation – 36 mW (typical) operating – 9 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply – 1.65V--2.2V Vdd (62WV12816ALL) – 2.5V--3.6V Vdd (62WV12816BLL) • Fully static operation: no cl | ISSI 矽成半导体 | | ||
128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 45ns, 55ns, 70ns • CMOS low power operation – 36 mW (typical) operating – 9 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply – 1.65V--2.2V Vdd (62WV12816ALL) – 2.5V--3.6V Vdd (62WV12816BLL) • Fully static operation: no cl | ISSI 矽成半导体 | | ||
128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 45ns, 55ns, 70ns • CMOS low power operation – 36 mW (typical) operating – 9 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply – 1.65V--2.2V Vdd (62WV12816ALL) – 2.5V--3.6V Vdd (62WV12816BLL) • Fully static operation: no cl | ISSI 矽成半导体 | | ||
128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 45ns, 55ns, 70ns • CMOS low power operation – 36 mW (typical) operating – 9 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply – 1.65V--2.2V Vdd (62WV12816ALL) – 2.5V--3.6V Vdd (62WV12816BLL) • Fully static operation: no cl | ISSI 矽成半导体 | | ||
128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 45ns, 55ns, 70ns • CMOS low power operation – 36 mW (typical) operating – 9 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply – 1.65V--2.2V Vdd (62WV12816ALL) – 2.5V--3.6V Vdd (62WV12816BLL) • Fully static operation: no cl | ISSI 矽成半导体 | | ||
128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 45ns, 55ns, 70ns • CMOS low power operation – 36 mW (typical) operating – 9 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply – 1.65V--2.2V Vdd (62WV12816ALL) – 2.5V--3.6V Vdd (62WV12816BLL) • Fully static operation: no cl | ISSI 矽成半导体 | | ||
128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 45ns, 55ns, 70ns • CMOS low power operation – 36 mW (typical) operating – 9 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply – 1.65V--2.2V Vdd (62WV12816ALL) – 2.5V--3.6V Vdd (62WV12816BLL) • Fully static operation: no cl | ISSI 矽成半导体 | | ||
128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 45ns, 55ns, 70ns • CMOS low power operation – 36 mW (typical) operating – 9 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply – 1.65V--2.2V Vdd (62WV12816ALL) – 2.5V--3.6V Vdd (62WV12816BLL) • Fully static operation: no cl | ISSI 矽成半导体 | | ||
128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 45ns, 55ns, 70ns • CMOS low power operation – 36 mW (typical) operating – 9 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply – 1.65V--2.2V Vdd (62WV12816ALL) – 2.5V--3.6V Vdd (62WV12816BLL) • Fully static operation: no cl | ISSI 矽成半导体 | | ||
128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 45ns, 55ns, 70ns • CMOS low power operation – 36 mW (typical) operating – 9 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply – 1.65V--2.2V Vdd (62WV12816ALL) – 2.5V--3.6V Vdd (62WV12816BLL) • Fully static operation: no cl | ISSI 矽成半导体 | | ||
128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 45ns, 55ns, 70ns • CMOS low power operation – 36 mW (typical) operating – 9 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply – 1.65V--2.2V Vdd (62WV12816ALL) – 2.5V--3.6V Vdd (62WV12816BLL) • Fully static operation: no cl | ISSI 矽成半导体 | | ||
128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 45ns, 55ns, 70ns • CMOS low power operation – 36 mW (typical) operating – 9 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply – 1.65V--2.2V Vdd (62WV12816ALL) – 2.5V--3.6V Vdd (62WV12816BLL) • Fully static operation: no cl | ISSI 矽成半导体 | | ||
128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 45ns, 55ns, 70ns • CMOS low power operation – 36 mW (typical) operating – 9 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply – 1.65V--2.2V Vdd (62WV12816ALL) – 2.5V--3.6V Vdd (62WV12816BLL) • Fully static operation: no cl | ISSI 矽成半导体 | | ||
128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 45ns, 55ns, 70ns • CMOS low power operation – 36 mW (typical) operating – 9 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply – 1.65V--2.2V Vdd (62WV12816ALL) – 2.5V--3.6V Vdd (62WV12816BLL) • Fully static operation: no cl | ISSI 矽成半导体 | | ||
128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 45ns, 55ns, 70ns • CMOS low power operation – 36 mW (typical) operating – 9 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply – 1.65V--2.2V Vdd (62WV12816ALL) – 2.5V--3.6V Vdd (62WV12816BLL) • Fully static operation: no cl | ISSI 矽成半导体 | | ||
128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 45ns, 55ns, 70ns • CMOS low power operation – 36 mW (typical) operating – 9 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply – 1.65V--2.2V Vdd (62WV12816ALL) – 2.5V--3.6V Vdd (62WV12816BLL) • Fully static operation: no cl | ISSI 矽成半导体 | | ||
128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 45ns, 55ns, 70ns • CMOS low power operation – 36 mW (typical) operating – 9 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply – 1.65V--2.2V Vdd (62WV12816ALL) – 2.5V--3.6V Vdd (62WV12816BLL) • Fully static operation: no cl | ISSI 矽成半导体 | | ||
128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 45ns, 55ns, 70ns • CMOS low power operation – 36 mW (typical) operating – 9 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply – 1.65V--2.2V Vdd (62WV12816ALL) – 2.5V--3.6V Vdd (62WV12816BLL) • Fully static operation: no cl | ISSI 矽成半导体 | | ||
128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 45ns, 55ns, 70ns • CMOS low power operation – 36 mW (typical) operating – 9 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply – 1.65V--2.2V Vdd (62WV12816ALL) – 2.5V--3.6V Vdd (62WV12816BLL) • Fully static operation: no cl | ISSI 矽成半导体 | | ||
128Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES High-speed access time: 45ns, 55ns CMOS low power operation – Operating Current: 18 mA (max) at 85°C – CMOS Standby Current: 5.4uA (typ) at 25°C TTL compatible interface levels Single power supply –1.65V-2.2V VDD (IS62WV12816EALL) – 2.2V-3.6V VDD (IS62/65WV12816EBLL) Th | ISSI 矽成半导体 | | ||
128Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES High-speed access time: 45ns, 55ns CMOS low power operation – Operating Current: 18 mA (max) at 85°C – CMOS Standby Current: 5.4uA (typ) at 25°C TTL compatible interface levels Single power supply –1.65V-2.2V VDD (IS62WV12816EALL) – 2.2V-3.6V VDD (IS62/65WV12816EBLL) Th | ISSI 矽成半导体 | | ||
128Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES High-speed access time: 45ns, 55ns CMOS low power operation – Operating Current: 18 mA (max) at 85°C – CMOS Standby Current: 5.4uA (typ) at 25°C TTL compatible interface levels Single power supply –1.65V-2.2V VDD (IS62WV12816EALL) – 2.2V-3.6V VDD (IS62/65WV12816EBLL) Th | ISSI 矽成半导体 | | ||
128Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES High-speed access time: 45ns, 55ns CMOS low power operation – Operating Current: 18 mA (max) at 85°C – CMOS Standby Current: 5.4uA (typ) at 25°C TTL compatible interface levels Single power supply –1.65V-2.2V VDD (IS62WV12816EALL) – 2.2V-3.6V VDD (IS62/65WV12816EBLL) Th | ISSI 矽成半导体 | | ||
128Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES High-speed access time: 45ns, 55ns CMOS low power operation – Operating Current: 18 mA (max) at 85°C – CMOS Standby Current: 5.4uA (typ) at 25°C TTL compatible interface levels Single power supply –1.65V-2.2V VDD (IS62WV12816EALL) – 2.2V-3.6V VDD (IS62/65WV12816EBLL) Th | ISSI 矽成半导体 | | ||
128Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES High-speed access time: 45ns, 55ns CMOS low power operation – Operating Current: 18 mA (max) at 85°C – CMOS Standby Current: 5.4uA (typ) at 25°C TTL compatible interface levels Single power supply –1.65V-2.2V VDD (IS62WV12816EALL) – 2.2V-3.6V VDD (IS62/65WV12816EBLL) Th | ISSI 矽成半导体 | | ||
128Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES High-speed access time: 45ns, 55ns CMOS low power operation – Operating Current: 18 mA (max) at 85°C – CMOS Standby Current: 5.4uA (typ) at 25°C TTL compatible interface levels Single power supply –1.65V-2.2V VDD (IS62WV12816EALL) – 2.2V-3.6V VDD (IS62/65WV12816EBLL) Th | ISSI 矽成半导体 | | ||
128Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES High-speed access time: 45ns, 55ns CMOS low power operation – Operating Current: 18 mA (max) at 85°C – CMOS Standby Current: 5.4uA (typ) at 25°C TTL compatible interface levels Single power supply –1.65V-2.2V VDD (IS62WV12816EALL) – 2.2V-3.6V VDD (IS62/65WV12816EBLL) Th | ISSI 矽成半导体 | | ||
128Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES High-speed access time: 45ns, 55ns CMOS low power operation – Operating Current: 18 mA (max) at 85°C – CMOS Standby Current: 5.4uA (typ) at 25°C TTL compatible interface levels Single power supply –1.65V-2.2V VDD (IS62WV12816EALL) – 2.2V-3.6V VDD (IS62/65WV12816EBLL) Th | ISSI 矽成半导体 | | ||
128Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES High-speed access time: 45ns, 55ns CMOS low power operation – Operating Current: 18 mA (max) at 85°C – CMOS Standby Current: 5.4uA (typ) at 25°C TTL compatible interface levels Single power supply –1.65V-2.2V VDD (IS62WV12816EALL) – 2.2V-3.6V VDD (IS62/65WV12816EBLL) Th | ISSI 矽成半导体 | | ||
128Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES High-speed access time: 45ns, 55ns CMOS low power operation – Operating Current: 18 mA (max) at 85°C – CMOS Standby Current: 5.4uA (typ) at 25°C TTL compatible interface levels Single power supply –1.65V-2.2V VDD (IS62WV12816EALL) – 2.2V-3.6V VDD (IS62/65WV12816EBLL) Th | ISSI 矽成半导体 | | ||
128Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES High-speed access time: 45ns, 55ns CMOS low power operation – Operating Current: 18 mA (max) at 85°C – CMOS Standby Current: 5.4uA (typ) at 25°C TTL compatible interface levels Single power supply –1.65V-2.2V VDD (IS62WV12816EALL) – 2.2V-3.6V VDD (IS62/65WV12816EBLL) Th | ISSI 矽成半导体 | | ||
128Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES High-speed access time: 45ns, 55ns CMOS low power operation – Operating Current: 18 mA (max) at 85°C – CMOS Standby Current: 5.4uA (typ) at 25°C TTL compatible interface levels Single power supply –1.65V-2.2V VDD (IS62WV12816EALL) – 2.2V-3.6V VDD (IS62/65WV12816EBLL) Th | ISSI 矽成半导体 | | ||
128Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES High-speed access time: 45ns, 55ns CMOS low power operation – Operating Current: 18 mA (max) at 85°C – CMOS Standby Current: 5.4uA (typ) at 25°C TTL compatible interface levels Single power supply –1.65V-2.2V VDD (IS62WV12816EALL) – 2.2V-3.6V VDD (IS62/65WV12816EBLL) Th | ISSI 矽成半导体 | | ||
128Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES High-speed access time: 45ns, 55ns CMOS low power operation – Operating Current: 26 mA (max) at 125°C – CMOS Standby Current: 3.0 uA (typ) at 25°C TTL compatible interface levels Single power supply –1.65V-2.2V VDD (IS62/65WV12816FALL) – 2.2V-3.6V VDD (IS62/65WV12816FBLL) | ISSI 矽成半导体 | | ||
128Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES High-speed access time: 45ns, 55ns CMOS low power operation – Operating Current: 26 mA (max) at 125°C – CMOS Standby Current: 3.0 uA (typ) at 25°C TTL compatible interface levels Single power supply –1.65V-2.2V VDD (IS62/65WV12816FALL) – 2.2V-3.6V VDD (IS62/65WV12816FBLL) | ISSI 矽成半导体 | | ||
128Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES High-speed access time: 45ns, 55ns CMOS low power operation – Operating Current: 26 mA (max) at 125°C – CMOS Standby Current: 3.0 uA (typ) at 25°C TTL compatible interface levels Single power supply –1.65V-2.2V VDD (IS62/65WV12816FALL) – 2.2V-3.6V VDD (IS62/65WV12816FBLL) | ISSI 矽成半导体 | | ||
128Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES High-speed access time: 45ns, 55ns CMOS low power operation – Operating Current: 26 mA (max) at 125°C – CMOS Standby Current: 3.0 uA (typ) at 25°C TTL compatible interface levels Single power supply –1.65V-2.2V VDD (IS62/65WV12816FALL) – 2.2V-3.6V VDD (IS62/65WV12816FBLL) | ISSI 矽成半导体 | | ||
128Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES High-speed access time: 45ns, 55ns CMOS low power operation – Operating Current: 26 mA (max) at 125°C – CMOS Standby Current: 3.0 uA (typ) at 25°C TTL compatible interface levels Single power supply –1.65V-2.2V VDD (IS62/65WV12816FALL) – 2.2V-3.6V VDD (IS62/65WV12816FBLL) | ISSI 矽成半导体 | | ||
128Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES High-speed access time: 45ns, 55ns CMOS low power operation – Operating Current: 26 mA (max) at 125°C – CMOS Standby Current: 3.0 uA (typ) at 25°C TTL compatible interface levels Single power supply –1.65V-2.2V VDD (IS62/65WV12816FALL) – 2.2V-3.6V VDD (IS62/65WV12816FBLL) | ISSI 矽成半导体 | | ||
128Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES High-speed access time: 45ns, 55ns CMOS low power operation – Operating Current: 26 mA (max) at 125°C – CMOS Standby Current: 3.0 uA (typ) at 25°C TTL compatible interface levels Single power supply –1.65V-2.2V VDD (IS62/65WV12816FALL) – 2.2V-3.6V VDD (IS62/65WV12816FBLL) | ISSI 矽成半导体 | | ||
128Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES High-speed access time: 45ns, 55ns CMOS low power operation – Operating Current: 26 mA (max) at 125°C – CMOS Standby Current: 3.0 uA (typ) at 25°C TTL compatible interface levels Single power supply –1.65V-2.2V VDD (IS62/65WV12816FALL) – 2.2V-3.6V VDD (IS62/65WV12816FBLL) | ISSI 矽成半导体 | | ||
128Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES High-speed access time: 45ns, 55ns CMOS low power operation – Operating Current: 26 mA (max) at 125°C – CMOS Standby Current: 3.0 uA (typ) at 25°C TTL compatible interface levels Single power supply –1.65V-2.2V VDD (IS62/65WV12816FALL) – 2.2V-3.6V VDD (IS62/65WV12816FBLL) | ISSI 矽成半导体 | | ||
128K x 16 LOW VOLTAGE ULTRA LOW POWER CMOS STATIC RAM 文件：112.01 Kbytes Page：17 Pages | ISSI 矽成半导体 | | ||
128K x 16 LOW VOLTAGE ULTRA LOW POWER CMOS STATIC RAM 文件：112.01 Kbytes Page：17 Pages | ISSI 矽成半导体 | | ||
128K x 16 LOW VOLTAGE ULTRA LOW POWER CMOS STATIC RAM 文件：112.01 Kbytes Page：17 Pages | ISSI 矽成半导体 | | ||
封装/外壳：48-TFBGA 包装：卷带（TR） 描述：IC SRAM 2MBIT PARALLEL 48MINIBGA 集成电路（IC） 存储器 | ETC 知名厂家 | ETC | | |
封装/外壳：48-TFBGA 包装：托盘 描述：IC SRAM 2MBIT PARALLEL 48MINIBGA 集成电路（IC） 存储器 | ETC 知名厂家 | ETC | | |
128K x 16 LOW VOLTAGE ULTRA LOW POWER CMOS STATIC RAM 文件：112.01 Kbytes Page：17 Pages | ISSI 矽成半导体 | | ||
128K x 16 LOW VOLTAGE ULTRA LOW POWER CMOS STATIC RAM 文件：112.01 Kbytes Page：17 Pages | ISSI 矽成半导体 | | ||
128K x 16 LOW VOLTAGE ULTRA LOW POWER CMOS STATIC RAM 文件：112.01 Kbytes Page：17 Pages | ISSI 矽成半导体 | | ||
128K x 16 LOW VOLTAGE ULTRA LOW POWER CMOS STATIC RAM 文件：112.01 Kbytes Page：17 Pages | ISSI 矽成半导体 | | ||
128K x 16 LOW VOLTAGE ULTRA LOW POWER CMOS STATIC RAM 文件：112.01 Kbytes Page：17 Pages | ISSI 矽成半导体 | | ||
128K x 16 LOW VOLTAGE ULTRA LOW POWER CMOS STATIC RAM 文件：112.01 Kbytes Page：17 Pages | ISSI 矽成半导体 | | ||
128K x 16 LOW VOLTAGE ULTRA LOW POWER CMOS STATIC RAM 文件：112.01 Kbytes Page：17 Pages | ISSI 矽成半导体 | | ||
128K x 16 LOW VOLTAGE ULTRA LOW POWER CMOS STATIC RAM 文件：112.01 Kbytes Page：17 Pages | ISSI 矽成半导体 | | ||
128K x 16 LOW VOLTAGE ULTRA LOW POWER CMOS STATIC RAM 文件：112.01 Kbytes Page：17 Pages | ISSI 矽成半导体 | | ||
128K x 16 LOW VOLTAGE ULTRA LOW POWER CMOS STATIC RAM 文件：112.01 Kbytes Page：17 Pages | ISSI 矽成半导体 | | ||
128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM 文件：429.78 Kbytes Page：17 Pages | ISSI 矽成半导体 | | ||
128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM 文件：429.78 Kbytes Page：17 Pages | ISSI 矽成半导体 | |
IS62WV12816产品属性
- 类型
描述
- 型号
IS62WV12816
- 制造商
ISSI
- 制造商全称
Integrated Silicon Solution, Inc
- 功能描述
128K x 16 LOW VOLTAGE ULTRA LOW POWER CMOS STATIC RAM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ISSI |
22+ |
TSOP44 |
100000 |
代理渠道/只做原装/可含税 |
|||
ISSI |
25+ |
TSOP |
58788 |
百分百原装现货 实单必成 欢迎询价 |
|||
ISSI |
14+ |
TSOP |
366 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ISSI |
24+ |
TSOP44 |
161695 |
明嘉莱只做原装正品现货 |
|||
ISSI |
24+ |
TSOP |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
ISSI |
23+ |
BGA |
4500 |
ISSI存储芯片在售 |
|||
ISSI |
23+ |
TSOP |
4840 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
|||
ISSI |
24+ |
TSSOP44 |
9800 |
一级代理/全新原装现货/长期供应! |
|||
ISSI |
17+ |
* |
90 |
||||
ISSI |
存储器 |
TSOP44 |
41923 |
ISSI存储芯片IS62WV12816BLL-55TLI即刻询购立享优惠#长期有货 |
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- IS62WV1288DBLL-45HLI
- IS62WV1288BLL-55TLI
- IS62WV1288BLL-55QLI
- IS62WV1288BLL-55HLI
- IS62WV12816DBLL-45TLI
- IS62WV12816BLL-55TLI-TR
- IS62WV12816BLL-55TLI
- IS62WV12816BLL-55BLI
- IS62WV12816BLL-55B2LI
- IS62WV10248EBLL-45TLI
- IS62WV10248DBLL-55TLI
- IS62WV10248BLL-55BLI
- IS62WV102416EBLL-55BLI
- IS62WV102416DBLL-55TLI
- IS62WV102416DBLL-45TLI
- IS62WV102416BLL-25TLI
- IS62WV102416BLL-25MLI
- IS62LV256AL-45ULI
- IS62LV256AL-45TLI
- IS62C5128BL-45QLI
- IS62C51216AL-55TLI
- IS62C256AL-45ULI-TR
- IS62C256AL-45ULI
- IS62C256AL-45TLI-TR
- IS62C256AL-45TLI
- IS62C256AL-25ULI
- IS62C25616BL-45TLI
- IS62C1024AL-35TLI-TR
- IS62C1024AL-35TLI
- IS627
- IS623
- IS622
- IS621
- IS620
- IS61C67
- IS611X
- IS611
- IS610X
- IS610
- IS609
- IS608X
- IS608
- IS607X
- IS607
- IS6051
- IS604X
- IS604
- IS6030
- IS6015X
IS62WV12816数据表相关新闻
IS62WV51216BLL-55TL
IS62WV51216BLL-55TL
2022-7-1IS62WV12816EBLL-45BLI
IS62WV12816EBLL-45BLI
2021-10-11IS61SF12832-8.5TQ
产品属性 属性值 搜索类似 制造商: ISSI 产品种类: 静态随机存取存储器 存储容量: 4 Mbit 访问时间: 8.5 ns 最大时钟频率: 90 MHz 电源电压-最大: 3.63 V 电源电压-最小: 3.135 V 电源电流—最大值: 230 mA 最小工作温度: 0 C 最大工作温度: + 70 C 安装风格: SMD/SMT 封装 / 箱体: TQFP-100 数
2020-7-13IS61SF12832-8.5TQ
原装正品 热卖 假一赔十
2020-7-13IS62WV5128ALL-70H，IS62WV2568ALL-70T，IS62WV5128BLL-55HLI，IS62WV5128BLL-55T2，IS62WV5128BLL-55T2I，IS62WV5128ALL-70TI，IS41C16100S-60TI，IS41C16128-40KI，IS41C16256-35T
IS62WV5128ALL-70H，IS62WV2568ALL-70T，IS62WV5128BLL-55HLI，IS62WV5128BLL-55T2，IS62WV5128BLL-55T2I，IS62WV5128ALL-70TI，IS41C16100S-60TI，IS41C16128-40KI，IS41C16256-35T
2020-1-1IS62C256AL-45TLI进口原装假一赔十
瀚佳科技(深圳）有限公司： 专业销售集成电路IC.单片机.内存闪存.二三级管模块等电子元器件。
2018-12-30
DdatasheetPDF页码索引
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