128Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 26 mA (max) at 125°C – CMOS Standby Current: 3.0 uA (typ) at 25°C  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV12816FALL) – 2.2V-3.6V VDD (IS62/65WV12816FBLL)

128K x 16 LOW VOLTAGE ULTRA LOW POWER CMOS STATIC RAM

文件：112.01 Kbytes Page：17 Pages

128Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 26 mA (max) at 125°C – CMOS Standby Current: 3.0 uA (typ) at 25°C  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV12816FALL) – 2.2V-3.6V VDD (IS62/65WV12816FBLL)

128Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 26 mA (max) at 125°C – CMOS Standby Current: 3.0 uA (typ) at 25°C  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV12816FALL) – 2.2V-3.6V VDD (IS62/65WV12816FBLL)

128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES • High-speed access time: 45ns, 55ns, 70ns • CMOS low power operation – 36 mW (typical) operating – 9 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply – 1.65V--2.2V Vdd (62WV12816ALL) – 2.5V--3.6V Vdd (62WV12816BLL) • Fully static operation: no cl

128K x 16 LOW VOLTAGE ULTRA LOW POWER CMOS STATIC RAM

文件：112.01 Kbytes Page：17 Pages

Very Low Power/Voltage CMOS SRAM 128k X 16 bit

文件：276.67 Kbytes Page：9 Pages

Very Low Power/Voltage CMOS SRAM 128k X 16 bit

文件：276.67 Kbytes Page：9 Pages