IS62WV12816BLL价格

参考价格:¥14.6985

型号:IS62WV12816BLL-55B2LI 品牌:ISSI 备注:这里有IS62WV12816BLL多少钱,2025年最近7天走势,今日出价,今日竞价,IS62WV12816BLL批发/采购报价,IS62WV12816BLL行情走势销售排行榜,IS62WV12816BLL报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IS62WV12816BLL

128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES • High-speed access time: 45ns, 55ns, 70ns • CMOS low power operation – 36 mW (typical) operating – 9 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply – 1.65V--2.2V Vdd (62WV12816ALL) – 2.5V--3.6V Vdd (62WV12816BLL) • Fully static operation: no cl

ISSI

矽成半导体

128K x 16 LOW VOLTAGE ULTRA LOW POWER CMOS STATIC RAM

文件:112.01 Kbytes Page:17 Pages

ISSI

矽成半导体

128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES • High-speed access time: 45ns, 55ns, 70ns • CMOS low power operation – 36 mW (typical) operating – 9 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply – 1.65V--2.2V Vdd (62WV12816ALL) – 2.5V--3.6V Vdd (62WV12816BLL) • Fully static operation: no cl

ISSI

矽成半导体

128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES • High-speed access time: 45ns, 55ns, 70ns • CMOS low power operation – 36 mW (typical) operating – 9 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply – 1.65V--2.2V Vdd (62WV12816ALL) – 2.5V--3.6V Vdd (62WV12816BLL) • Fully static operation: no cl

ISSI

矽成半导体

128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES • High-speed access time: 45ns, 55ns, 70ns • CMOS low power operation – 36 mW (typical) operating – 9 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply – 1.65V--2.2V Vdd (62WV12816ALL) – 2.5V--3.6V Vdd (62WV12816BLL) • Fully static operation: no cl

ISSI

矽成半导体

128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES • High-speed access time: 45ns, 55ns, 70ns • CMOS low power operation – 36 mW (typical) operating – 9 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply – 1.65V--2.2V Vdd (62WV12816ALL) – 2.5V--3.6V Vdd (62WV12816BLL) • Fully static operation: no cl

ISSI

矽成半导体

128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES • High-speed access time: 45ns, 55ns, 70ns • CMOS low power operation – 36 mW (typical) operating – 9 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply – 1.65V--2.2V Vdd (62WV12816ALL) – 2.5V--3.6V Vdd (62WV12816BLL) • Fully static operation: no cl

ISSI

矽成半导体

128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES • High-speed access time: 45ns, 55ns, 70ns • CMOS low power operation – 36 mW (typical) operating – 9 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply – 1.65V--2.2V Vdd (62WV12816ALL) – 2.5V--3.6V Vdd (62WV12816BLL) • Fully static operation: no cl

ISSI

矽成半导体

128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES • High-speed access time: 45ns, 55ns, 70ns • CMOS low power operation – 36 mW (typical) operating – 9 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply – 1.65V--2.2V Vdd (62WV12816ALL) – 2.5V--3.6V Vdd (62WV12816BLL) • Fully static operation: no cl

ISSI

矽成半导体

128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES • High-speed access time: 45ns, 55ns, 70ns • CMOS low power operation – 36 mW (typical) operating – 9 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply – 1.65V--2.2V Vdd (62WV12816ALL) – 2.5V--3.6V Vdd (62WV12816BLL) • Fully static operation: no cl

ISSI

矽成半导体

128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES • High-speed access time: 45ns, 55ns, 70ns • CMOS low power operation – 36 mW (typical) operating – 9 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply – 1.65V--2.2V Vdd (62WV12816ALL) – 2.5V--3.6V Vdd (62WV12816BLL) • Fully static operation: no cl

ISSI

矽成半导体

128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES • High-speed access time: 45ns, 55ns, 70ns • CMOS low power operation – 36 mW (typical) operating – 9 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply – 1.65V--2.2V Vdd (62WV12816ALL) – 2.5V--3.6V Vdd (62WV12816BLL) • Fully static operation: no cl

ISSI

矽成半导体

128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES • High-speed access time: 45ns, 55ns, 70ns • CMOS low power operation – 36 mW (typical) operating – 9 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply – 1.65V--2.2V Vdd (62WV12816ALL) – 2.5V--3.6V Vdd (62WV12816BLL) • Fully static operation: no cl

ISSI

矽成半导体

128K x 16 LOW VOLTAGE ULTRA LOW POWER CMOS STATIC RAM

文件:112.01 Kbytes Page:17 Pages

ISSI

矽成半导体

128K x 16 LOW VOLTAGE ULTRA LOW POWER CMOS STATIC RAM

文件:112.01 Kbytes Page:17 Pages

ISSI

矽成半导体

封装/外壳:44-TSOP(0.400",10.16mm 宽) 包装:管件 描述:IC SRAM 2MBIT PARALLEL 44TSOP II 集成电路(IC) 存储器

ETC

知名厂家

128K x 16 LOW VOLTAGE ULTRA LOW POWER CMOS STATIC RAM

文件:112.01 Kbytes Page:17 Pages

ISSI

矽成半导体

封装/外壳:48-TFBGA 包装:托盘托盘 描述:IC SRAM 2MBIT PARALLEL 48MINIBGA 集成电路(IC) 存储器

ETC

知名厂家

128K x 16 LOW VOLTAGE ULTRA LOW POWER CMOS STATIC RAM

文件:112.01 Kbytes Page:17 Pages

ISSI

矽成半导体

128K x 16 LOW VOLTAGE ULTRA LOW POWER CMOS STATIC RAM

文件:112.01 Kbytes Page:17 Pages

ISSI

矽成半导体

128K x 16 LOW VOLTAGE ULTRA LOW POWER CMOS STATIC RAM

文件:112.01 Kbytes Page:17 Pages

ISSI

矽成半导体

128K x 16 LOW VOLTAGE ULTRA LOW POWER CMOS STATIC RAM

文件:112.01 Kbytes Page:17 Pages

ISSI

矽成半导体

128K x 16 LOW VOLTAGE ULTRA LOW POWER CMOS STATIC RAM

文件:112.01 Kbytes Page:17 Pages

ISSI

矽成半导体

128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES • High-speed access time: 45ns, 55ns, 70ns • CMOS low power operation – 36 mW (typical) operating – 9 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply – 1.65V--2.2V Vdd (62WV12816ALL) – 2.5V--3.6V Vdd (62WV12816BLL) • Fully static operation: no cl

ISSI

矽成半导体

128K x 16 LOW VOLTAGE ULTRA LOW POWER CMOS STATIC RAM

文件:112.01 Kbytes Page:17 Pages

ISSI

矽成半导体

Very Low Power/Voltage CMOS SRAM 128k X 16 bit

文件:276.67 Kbytes Page:9 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Very Low Power/Voltage CMOS SRAM 128k X 16 bit

文件:276.67 Kbytes Page:9 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

IS62WV12816BLL产品属性

  • 类型

    描述

  • 型号

    IS62WV12816BLL

  • 制造商

    ISSI

  • 制造商全称

    Integrated Silicon Solution, Inc

  • 功能描述

    128K x 16 LOW VOLTAGE ULTRA LOW POWER CMOS STATIC RAM

更新时间:2025-11-22 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ISSI(美国芯成)
24+
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7350
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ISSI
2016+
BGA
3950
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23+
NA
20000
全新原装假一赔十
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24+
BGA
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
ISSI
25+
TSOP
58788
百分百原装现货 实单必成 欢迎询价
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22+
TSOP48
100000
代理渠道/只做原装/可含税
ISSI
1131+;08+
TSOP
40
一级代理,专注军工、汽车、医疗、工业、新能源、电力
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24+
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161695
明嘉莱只做原装正品现货
ISSI
24+
TSOP
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
ISSI
23+
BGA
4500
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