IS62C1024说明书PDF资料货源供应商报价ISSI-IC资料网

您好,欢迎来到114ic资料网！

114ic电子网登录注册

芯片资料

数据手册
丝印反查
库存查询
行业新闻
生产厂家
替换型号
晶体管

精确

位置：首页 > IC中文资料第376页 > IS62

IS62价格

参考价格：￥56.7567

型号：IS62C10248AL-55TLI 品牌：ISSI 备注：这里有IS62多少钱，2025年最近7天走势，今日出价，今日竞价，IS62批发/采购报价，IS62行情走势销售排行榜，IS62报价。

型号	功能描述	生产厂家企业	LOGO
IS62C1024	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ISSI 矽成半导体	ISSI
IS62C1024	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ICSI	ICSI
IS62C1024-35Q	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ICSI	ICSI
IS62C1024-35Q	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ISSI 矽成半导体	ISSI
IS62C1024-35QI	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ICSI	ICSI
IS62C1024-35QI	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ISSI 矽成半导体	ISSI
IS62C1024-35T	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ICSI	ICSI
IS62C1024-35T	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ISSI 矽成半导体	ISSI
IS62C1024-35TI	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ICSI	ICSI
IS62C1024-35TI	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ISSI 矽成半导体	ISSI
IS62C1024-35W	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ICSI	ICSI
IS62C1024-35WI	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ICSI	ICSI
IS62C1024-45Q	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ICSI	ICSI
IS62C1024-45Q	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ISSI 矽成半导体	ISSI
IS62C1024-45QI	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ICSI	ICSI
IS62C1024-45QI	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ISSI 矽成半导体	ISSI
IS62C1024-45T	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ICSI	ICSI
IS62C1024-45T	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ISSI 矽成半导体	ISSI
IS62C1024-45TI	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ICSI	ICSI
IS62C1024-45TI	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ISSI 矽成半导体	ISSI
IS62C1024-45W	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ICSI	ICSI
IS62C1024-45WI	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ICSI	ICSI
IS62C1024-55Q	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ICSI	ICSI
IS62C1024-55Q	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ISSI 矽成半导体	ISSI
IS62C1024-55QI	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ICSI	ICSI
IS62C1024-55QI	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ISSI 矽成半导体	ISSI
IS62C1024-55T	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ICSI	ICSI
IS62C1024-55T	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ISSI 矽成半导体	ISSI
IS62C1024-55TI	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ICSI	ICSI
IS62C1024-55TI	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ISSI 矽成半导体	ISSI
IS62C1024-55W	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ICSI	ICSI
IS62C1024-55WI	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ICSI	ICSI
IS62C1024-70Q	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ICSI	ICSI
IS62C1024-70Q	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ISSI 矽成半导体	ISSI
IS62C1024-70QI	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ISSI 矽成半导体	ISSI
IS62C1024-70QI	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ICSI	ICSI
IS62C1024-70T	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ISSI 矽成半导体	ISSI
IS62C1024-70T	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ICSI	ICSI
IS62C1024-70TI	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ICSI	ICSI
IS62C1024-70TI	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ISSI 矽成半导体	ISSI
IS62C1024-70W	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ICSI	ICSI
IS62C1024-70WI	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ICSI	ICSI
IS62C10248AL_V01	1M x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 45ns, 55ns • CMOS low power operation – 36 mW (typical) operating – 12 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply – 4.5V--5.5V Vdd • Three state outputs • Automotive temperature (-40oC to +125oC) • Lead-free availa	ISSI 矽成半导体	ISSI
IS62C10248AL-55MLI	1M x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 45ns, 55ns • CMOS low power operation – 36 mW (typical) operating – 12 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply – 4.5V--5.5V Vdd • Three state outputs • Automotive temperature (-40oC to +125oC) • Lead-free availa	ISSI 矽成半导体	ISSI
IS62C10248AL-55TLI	1M x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 45ns, 55ns • CMOS low power operation – 36 mW (typical) operating – 12 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply – 4.5V--5.5V Vdd • Three state outputs • Automotive temperature (-40oC to +125oC) • Lead-free availa	ISSI 矽成半导体	ISSI
IS62C1024AL	128K x 8 LOW POWER CMOS STATIC RAM DESCRIPTION The ISSI IS62C1024AL/IS65C1024AL is a low power, 131,072-word by 8-bit CMOS static RAM. It is fabricated using high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices.	ISSI 矽成半导体	ISSI
IS62C1024AL	128K x 8 LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 35, 45 ns • Low active power: 100 mW (typical) • Low standby power: 20 μW (typical) CMOS standby • Output Enable (OE) and two Chip Enable (CE1 and CE2) inputs for ease in applications • Fully static operation: no clock or refresh required • TTL compatibl	ISSI 矽成半导体	ISSI
IS62C1024AL_V01	128K x 8 LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 35, 45 ns • Low active power: 100 mW (typical) • Low standby power: 20 μW (typical) CMOS standby • Output Enable (OE) and two Chip Enable (CE1 and CE2) inputs for ease in applications • Fully static operation: no clock or refresh required • TTL compatibl	ISSI 矽成半导体	ISSI
IS62C1024AL-35Q	128K x 8 LOW POWER CMOS STATIC RAM DESCRIPTION The ISSI IS62C1024AL/IS65C1024AL is a low power, 131,072-word by 8-bit CMOS static RAM. It is fabricated using high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices.	ISSI 矽成半导体	ISSI
IS62C1024AL-35QI	128K x 8 LOW POWER CMOS STATIC RAM DESCRIPTION The ISSI IS62C1024AL/IS65C1024AL is a low power, 131,072-word by 8-bit CMOS static RAM. It is fabricated using high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices.	ISSI 矽成半导体	ISSI
IS62C1024AL-35QLI	128K x 8 LOW POWER CMOS STATIC RAM DESCRIPTION The ISSI IS62C1024AL/IS65C1024AL is a low power, 131,072-word by 8-bit CMOS static RAM. It is fabricated using high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices.	ISSI 矽成半导体	ISSI
IS62C1024AL-35QLI	128K x 8 LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 35, 45 ns • Low active power: 100 mW (typical) • Low standby power: 20 μW (typical) CMOS standby • Output Enable (OE) and two Chip Enable (CE1 and CE2) inputs for ease in applications • Fully static operation: no clock or refresh required • TTL compatibl	ISSI 矽成半导体	ISSI
IS62C1024AL-35T	128K x 8 LOW POWER CMOS STATIC RAM DESCRIPTION The ISSI IS62C1024AL/IS65C1024AL is a low power, 131,072-word by 8-bit CMOS static RAM. It is fabricated using high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices.	ISSI 矽成半导体	ISSI
IS62C1024AL-35TI	128K x 8 LOW POWER CMOS STATIC RAM DESCRIPTION The ISSI IS62C1024AL/IS65C1024AL is a low power, 131,072-word by 8-bit CMOS static RAM. It is fabricated using high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices.	ISSI 矽成半导体	ISSI
IS62C1024AL-35TLI	128K x 8 LOW POWER CMOS STATIC RAM DESCRIPTION The ISSI IS62C1024AL/IS65C1024AL is a low power, 131,072-word by 8-bit CMOS static RAM. It is fabricated using high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices.	ISSI 矽成半导体	ISSI
IS62C1024AL-35TLI	128K x 8 LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 35, 45 ns • Low active power: 100 mW (typical) • Low standby power: 20 μW (typical) CMOS standby • Output Enable (OE) and two Chip Enable (CE1 and CE2) inputs for ease in applications • Fully static operation: no clock or refresh required • TTL compatibl	ISSI 矽成半导体	ISSI
IS62C256	32K x 8 LOW POWER CMOS STATIC RAM DESCRIPTION The ISSI IS62C256 is a low power, 32,768 word by 8-bit CMOS static RAM. It is fabricated using ISSIs high performance, low power CMOS technology. WhenCSis HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down to 250 µW (typical) at CM	ISSI 矽成半导体	ISSI
IS62C25616EL	256Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 22 mA (max) at 85°C – CMOS Standby Current: 5.0uA (typ) at 25°C  TTL compatible interface levels  Single 5V ± 10 % power supply  Package : 44-pin TSOP (Type II)  Three state outputs  Com	ISSI 矽成半导体	ISSI
IS62C25616EL-45TLI	256Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 22 mA (max) at 85°C – CMOS Standby Current: 5.0uA (typ) at 25°C  TTL compatible interface levels  Single 5V ± 10 % power supply  Package : 44-pin TSOP (Type II)  Three state outputs  Com	ISSI 矽成半导体	ISSI
IS62C256-45T	32K x 8 LOW POWER CMOS STATIC RAM DESCRIPTION The ISSI IS62C256 is a low power, 32,768 word by 8-bit CMOS static RAM. It is fabricated using ISSIs high performance, low power CMOS technology. WhenCSis HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down to 250 µW (typical) at CM	ISSI 矽成半导体	ISSI

IS62产品属性

类型
描述
型号
IS62
制造商
IDEC Corporation
功能描述
SENS.IND. 10-30VDC NPN NC

IS62供应商更多...

更新时间：2025-11-20 13:48:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市星佑电子有限公司	IS62C1024AL-35TLI	ISSI	2009	TSOP	3968	厂家指定一级分销全新原装现货价	询价
深圳市坤融电子科技有限公司	IS62C1024L-45Q	ISSI	2025+	SOP	4850	原装进口价格优请找坤融电子!	询价
深圳市金华微盛电子有限公司	IS62C1024-70T	ISSI	19+	TSOP	18654		询价
深圳市博中泰实业有限公司	IS62C1024-35Q	ISSI有批量	24+	SOP-32	60000	全新原装现货	询价
深圳市粤骏腾电子科技有限公司	IS62C1024		24+		100	大批量供应优势库存热卖	询价
深圳市福田区亿兴成电子商行	IS62C1024AL-35QLI	IS		SOP	10	原装现货	询价
深圳市富达微科技有限公司	IS62C1024AL-35TLI	ISSI	24+	32-TFSOP	30000	原厂原装，价格优势，欢迎洽谈！	询价
深圳市勤思达科技有限公司	IS62C1024-35Q	ISSI	24+	SOP32	5000	全新原装正品,现货销售	询价
深圳市诚利顺电子科技有限公司	IS62C1024AL-35QLI	ISSI	25+		6500	十七年专营原装现货一手货源,样品免费送	询价
深圳市拓亿芯电子有限公司	IS62C1024AL-35QLI	ISSI	25+	SOP32	12500	全新原装现货,假一赔十	询价

IS62芯片相关品牌

IS62规格书下载地址

IS62参数引脚图相关

IS62数据表相关新闻

IS62WV51216BLL-55TL
IS62WV51216BLL-55TL
2022-7-1
IS62WV12816EBLL-45BLI
IS62WV12816EBLL-45BLI
2021-10-11
IS61SF12832-8.5TQ
产品属性属性值搜索类似制造商: ISSI 产品种类: 静态随机存取存储器存储容量: 4 Mbit 访问时间: 8.5 ns 最大时钟频率: 90 MHz 电源电压-最大: 3.63 V 电源电压-最小: 3.135 V 电源电流—最大值: 230 mA 最小工作温度: 0 C 最大工作温度: + 70 C 安装风格: SMD/SMT 封装 / 箱体: TQFP-100 数
2020-7-13
IS61SF12832-8.5TQ
原装正品热卖假一赔十
2020-7-13
IS61LV256AH-15JI，IS61LV256AH-10T，IS61LV256AH-10TI，IS61LV256AH-12J，IS61LV2568L-12TI，IS61LV2568L-10TLI，IS61LV2568L-10K，IS61LV2568-12T，IS61LV2568-12K，IS61LV2568-15T
IS61LV256AH-15JI，IS61LV256AH-10T，IS61LV256AH-10TI，IS61LV256AH-12J，IS61LV2568L-12TI，IS61LV2568L-10TLI，IS61LV2568L-10K，IS61LV2568-12T，IS61LV2568-12K，IS61LV2568-15T
2020-1-1
IS62C256AL-45TLI进口原装假一赔十
瀚佳科技(深圳）有限公司：专业销售集成电路IC.单片机.内存闪存.二三级管模块等电子元器件。
2018-12-30

DdatasheetPDF页码索引

P1
P2
P3
P4
P5
P6
P7
P8
P9
P10
P11
P12
P13
P14
P15
P16
P17
P18
P19
P20
P21
P22
P23
P24
P25
P26
P27
P28
P29
P30
P31
P32
P33
P34
P35
P36
P37
P38
P39
P40
P41
P42
P43
P44
P45
P46
P47
P48
P49
P50
P51
P52
P53
P54
P55
P56
P57
P58
P59
P60
P61
P62
P63
P64
P65
P66
P67
P68
P69
P70
P71
P72
P73
P74
P75
P76
P77
P78
P79
P80
P81
P82
P83
P84
P85
P86
P87
P88
P89
P90
P91
P92
P93
P94
P95
P96
P97
P98
P99
P100
P101
P102
P103
P104
P105
P106
P107

您好,欢迎来到114ic资料网！

IS62价格

IS62产品属性

IS62供应商更多...

IS62芯片相关品牌

IS62规格书下载地址

IS62参数引脚图相关

IS62数据表相关新闻

IS62WV51216BLL-55TL

IS62WV12816EBLL-45BLI

IS61SF12832-8.5TQ

IS61SF12832-8.5TQ

IS61LV256AH-15JI，IS61LV256AH-10T，IS61LV256AH-10TI，IS61LV256AH-12J，IS61LV2568L-12TI，IS61LV2568L-10TLI，IS61LV2568L-10K，IS61LV2568-12T，IS61LV2568-12K，IS61LV2568-15T

IS62C256AL-45TLI进口原装假一赔十

DdatasheetPDF页码索引