Serial SRAM & Low Pin Count SRAM

·Broad Solution:- x8, x16, and x32 configurations available- 5V/3.3V/1.8V VDD Power Supply- Commercial, Industrial, and Automotive Temperature (-40 °C to 125 °C) support- BGA, SOJ, SOP, sTSOP, TSOP packages available\n·ECC feature available for High Speed Asynchronous SRAMs\n·Long-term support\n

IS621XSM - 光电耦合器, 过零, 表面安装DIP, 6 引脚, 5.3 kV, 过零, 600 V

The IS621XSM is a 6-pin Optically Coupled Isolator consisting of a gallium arsenide infrared emitting diode coupled with a monolithic silicon detector performing the functions of a zero crossing bilateral TRIAC mounting. It is suitable for CRTs and power TRIAC driver. ·All electrical parameters 100% tested\n·50mA Forward current\n·6V Reverse voltage\n·250mW Total power dissipation;

128K x 8 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ICSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE

128K x 8 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ISSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE

128K x 8 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ISSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE

128K x 8 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ICSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE

128K x 8 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ISSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE

128K x 8 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ICSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE

128K x 8 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ICSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE

128K x 8 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ISSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE

128K x 8 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ISSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE

128K x 8 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ICSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE

128K x 8 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ICSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE

128K x 8 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ICSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE

128K x 8 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ISSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE

128K x 8 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ICSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE

128K x 8 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ICSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE

128K x 8 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ISSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE

128K x 8 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ISSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE

128K x 8 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ICSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE

128K x 8 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ICSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE

128K x 8 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ISSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE

128K x 8 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ICSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE

128K x 8 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ICSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE

128K x 8 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ICSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE

128K x 8 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ISSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE

128K x 8 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ISSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE

128K x 8 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ICSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE

128K x 8 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ICSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE

128K x 8 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ISSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE

128K x 8 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ISSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE

128K x 8 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ICSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE

128K x 8 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ICSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE

128K x 8 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ICSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE

128K x 8 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ICSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE

128K x 8 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ISSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE

128K x 8 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ISSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE

128K x 8 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ICSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE

128K x 8 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ICSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE

128K x 8 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ISSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE

128K x 8 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ISSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE

128K x 8 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ICSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE

128K x 8 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ICSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE

128K x 8 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ICSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE

1M x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES • High-speed access time: 45ns, 55ns • CMOS low power operation – 36 mW (typical) operating – 12 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply – 4.5V--5.5V Vdd • Three state outputs • Automotive temperature (-40oC to +125oC) • Lead-free availa

1M x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES • High-speed access time: 45ns, 55ns • CMOS low power operation – 36 mW (typical) operating – 12 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply – 4.5V--5.5V Vdd • Three state outputs • Automotive temperature (-40oC to +125oC) • Lead-free availa

1M x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES • High-speed access time: 45ns, 55ns • CMOS low power operation – 36 mW (typical) operating – 12 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply – 4.5V--5.5V Vdd • Three state outputs • Automotive temperature (-40oC to +125oC) • Lead-free availa

1M x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES • High-speed access time: 45ns, 55ns • CMOS low power operation – 36 mW (typical) operating – 12 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply – 4.5V--5.5V Vdd • Three state outputs • Automotive temperature (-40oC to +125oC) • Lead-free availa

128K x 8 LOW POWER CMOS STATIC RAM

FEATURES • High-speed access time: 35, 45 ns • Low active power: 100 mW (typical) • Low standby power: 20 μW (typical) CMOS standby • Output Enable (OE) and two Chip Enable (CE1 and CE2) inputs for ease in applications • Fully static operation: no clock or refresh required • TTL compatibl

128K x 8 LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62C1024AL/IS65C1024AL is a low power, 131,072-word by 8-bit CMOS static RAM. It is fabricated using high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices.

128K x 8 LOW POWER CMOS STATIC RAM

FEATURES • High-speed access time: 35, 45 ns • Low active power: 100 mW (typical) • Low standby power: 20 μW (typical) CMOS standby • Output Enable (OE) and two Chip Enable (CE1 and CE2) inputs for ease in applications • Fully static operation: no clock or refresh required • TTL compatibl

128K x 8 LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62C1024AL/IS65C1024AL is a low power, 131,072-word by 8-bit CMOS static RAM. It is fabricated using high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices.

128K x 8 LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62C1024AL/IS65C1024AL is a low power, 131,072-word by 8-bit CMOS static RAM. It is fabricated using high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices.

128K x 8 LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62C1024AL/IS65C1024AL is a low power, 131,072-word by 8-bit CMOS static RAM. It is fabricated using high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices.

128K x 8 LOW POWER CMOS STATIC RAM

FEATURES • High-speed access time: 35, 45 ns • Low active power: 100 mW (typical) • Low standby power: 20 μW (typical) CMOS standby • Output Enable (OE) and two Chip Enable (CE1 and CE2) inputs for ease in applications • Fully static operation: no clock or refresh required • TTL compatibl

128K x 8 LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62C1024AL/IS65C1024AL is a low power, 131,072-word by 8-bit CMOS static RAM. It is fabricated using high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices.

128K x 8 LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62C1024AL/IS65C1024AL is a low power, 131,072-word by 8-bit CMOS static RAM. It is fabricated using high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices.

128K x 8 LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62C1024AL/IS65C1024AL is a low power, 131,072-word by 8-bit CMOS static RAM. It is fabricated using high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices.

128K x 8 LOW POWER CMOS STATIC RAM

FEATURES • High-speed access time: 35, 45 ns • Low active power: 100 mW (typical) • Low standby power: 20 μW (typical) CMOS standby • Output Enable (OE) and two Chip Enable (CE1 and CE2) inputs for ease in applications • Fully static operation: no clock or refresh required • TTL compatibl

32K x 8 LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62C256 is a low power, 32,768 word by 8-bit CMOS static RAM. It is fabricated using ISSIs high performance, low power CMOS technology. WhenCSis HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down to 250 µW (typical) at CM