32K x 8 LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62C256 is a low power, 32,768 word by 8-bit CMOS static RAM. It is fabricated using ISSIs high performance, low power CMOS technology. WhenCSis HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down to 250 µW (typical) at CM

256Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 22 mA (max) at 85°C – CMOS Standby Current: 5.0uA (typ) at 25°C  TTL compatible interface levels  Single 5V ± 10 % power supply  Package : 44-pin TSOP (Type II)  Three state outputs  Com

5V Low Power Asynchronous SRAM

·Broad Solution:- x8, x16, and x32 configurations available- 5V/3.3V/1.8V VDD Power Supply- Commercial, Industrial, and Automotive Temperature (-40 °C to 125 °C) support- BGA, SOJ, SOP, sTSOP, TSOP packages available\n·ECC feature available for High Speed Asynchronous SRAMs\n·Long-term support\n

256Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 22 mA (max) at 85°C – CMOS Standby Current: 5.0uA (typ) at 25°C  TTL compatible interface levels  Single 5V ± 10 % power supply  Package : 44-pin TSOP (Type II)  Three state outputs  Com

32K x 8 LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62C256 is a low power, 32,768 word by 8-bit CMOS static RAM. It is fabricated using ISSIs high performance, low power CMOS technology. WhenCSis HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down to 250 µW (typical) at CM

32K x 8 LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62C256 is a low power, 32,768 word by 8-bit CMOS static RAM. It is fabricated using ISSIs high performance, low power CMOS technology. WhenCSis HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down to 250 µW (typical) at CM

32K x 8 LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62C256 is a low power, 32,768 word by 8-bit CMOS static RAM. It is fabricated using ISSIs high performance, low power CMOS technology. WhenCSis HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down to 250 µW (typical) at CM

32K x 8 LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62C256 is a low power, 32,768 word by 8-bit CMOS static RAM. It is fabricated using ISSIs high performance, low power CMOS technology. WhenCSis HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down to 250 µW (typical) at CM

32K x 8 LOW POWER CMOS STATIC RAM

DESCRIPTION\nThe ISSI IS62C256 is a low power, 32,768 word by 8-bit CMOS static RAM. It is fabricated using ISSIs high performance, low power CMOS technology.\nWhenCSis HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down to 250 µW (typical) at CMOS • Access time: 45, 70 ns\n• Low active power: 200 mW (typical)\n• Low standby power\n   — 250 µW (typical) CMOS standby\n   — 28 mW (typical) TTL standby\n• Fully static operation: no clock or refresh required\n• TTL compatible inputs and outputs\n• Single 5V power supply;

32K x 8 LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62C256 is a low power, 32,768 word by 8-bit CMOS static RAM. It is fabricated using ISSIs high performance, low power CMOS technology. WhenCSis HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down to 250 µW (typical) at CM

32K x 8 LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62C256 is a low power, 32,768 word by 8-bit CMOS static RAM. It is fabricated using ISSIs high performance, low power CMOS technology. WhenCSis HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down to 250 µW (typical) at CM

32K x 8 LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62C256 is a low power, 32,768 word by 8-bit CMOS static RAM. It is fabricated using ISSIs high performance, low power CMOS technology. WhenCSis HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down to 250 µW (typical) at CM

32K x 8 LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62C256 is a low power, 32,768 word by 8-bit CMOS static RAM. It is fabricated using ISSIs high performance, low power CMOS technology. WhenCSis HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down to 250 µW (typical) at CM

32K x 8 LOW POWER CMOS STATIC RAM

FEATURES • Access time: 25 ns, 45 ns • Low active power: 200 mW (typical) • Low standby power — 150 μW (typical) CMOS standby — 15 mW (typical) operating • Fully static operation: no clock or refresh required • TTL compatible inputs and outputs • Single 5V power supply • Lead-free availa

32K x 8 LOW POWER CMOS STATIC RAM

FEATURES • Access time: 25 ns, 45 ns • Low active power: 200 mW (typical) • Low standby power — 150 μW (typical) CMOS standby — 15 mW (typical) operating • Fully static operation: no clock or refresh required • TTL compatible inputs and outputs • Single 5V power supply • Lead-free availa

32K x 8 LOW POWER CMOS STATIC RAM

FEATURES • Access time: 25 ns, 45 ns • Low active power: 200 mW (typical) • Low standby power — 150 μW (typical) CMOS standby — 15 mW (typical) operating • Fully static operation: no clock or refresh required • TTL compatible inputs and outputs • Single 5V power supply • Lead-free availa

32K x 8 LOW POWER CMOS STATIC RAM

FEATURES • Access time: 25 ns, 45 ns • Low active power: 200 mW (typical) • Low standby power — 150 μW (typical) CMOS standby — 15 mW (typical) operating • Fully static operation: no clock or refresh required • TTL compatible inputs and outputs • Single 5V power supply • Lead-free availa

32K x 8 LOW POWER CMOS STATIC RAM

FEATURES • Access time: 25 ns, 45 ns • Low active power: 200 mW (typical) • Low standby power — 150 μW (typical) CMOS standby — 15 mW (typical) operating • Fully static operation: no clock or refresh required • TTL compatible inputs and outputs • Single 5V power supply • Lead-free availa

32K x 8 LOW POWER CMOS STATIC RAM

FEATURES • Access time: 25 ns, 45 ns • Low active power: 200 mW (typical) • Low standby power — 150 μW (typical) CMOS standby — 15 mW (typical) operating • Fully static operation: no clock or refresh required • TTL compatible inputs and outputs • Single 5V power supply • Lead-free availa

256K x 16 HIGH-SPEED CMOS STATIC RAM

文件：435.22 Kbytes Page：13 Pages

封装/外壳：44-TSOP（0.400"，10.16mm 宽） 包装：托盘 描述：IC SRAM 4MBIT PARALLEL 44TSOP II 集成电路（IC） 存储器

封装/外壳：44-TSOP（0.400"，10.16mm 宽） 包装：卷带（TR） 描述：IC SRAM 4MBIT PARALLEL 44TSOP II 集成电路（IC） 存储器

IC SRAM 256K PARALLEL 28SOP

32K x 8 LOW POWER CMOS STATIC RAM

文件：625.84 Kbytes Page：12 Pages

32K x 8 LOW POWER CMOS STATIC RAM

文件：92.59 Kbytes Page：12 Pages

32K x 8 LOW POWER CMOS STATIC RAM

文件：92.59 Kbytes Page：12 Pages

32K x 8 LOW POWER CMOS STATIC RAM

文件：92.59 Kbytes Page：12 Pages

32K x 8 LOW POWER CMOS STATIC RAM

文件：92.59 Kbytes Page：12 Pages

32K x 8 LOW POWER CMOS STATIC RAM

文件：92.59 Kbytes Page：12 Pages

32K x 8 LOW POWER CMOS STATIC RAM

文件：92.59 Kbytes Page：12 Pages

32K x 8 LOW POWER CMOS STATIC RAM

文件：92.59 Kbytes Page：12 Pages

32K x 8 LOW POWER CMOS STATIC RAM

文件：92.59 Kbytes Page：12 Pages

32K x 8 LOW POWER CMOS STATIC RAM

文件：92.59 Kbytes Page：12 Pages

32K x 8 LOW POWER CMOS STATIC RAM

文件：92.59 Kbytes Page：12 Pages

32K x 8 LOW POWER CMOS STATIC RAM

文件：92.59 Kbytes Page：12 Pages

32K x 8 LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62C256 is a low power, 32,768 word by 8-bit CMOS static RAM. It is fabricated using ISSIs high performance, low power CMOS technology. WhenCSis HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down to 250 µW (typical) at CM

32K X 8 LOW POWER CMOS STATIC RAM

32K x 8-BIT CMOS SRAM

文件：376.47 Kbytes Page：11 Pages