128K x 8 LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62C1024AL/IS65C1024AL is a low power, 131,072-word by 8-bit CMOS static RAM. It is fabricated using high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices.

128K x 8 LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62C1024AL/IS65C1024AL is a low power, 131,072-word by 8-bit CMOS static RAM. It is fabricated using high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices.

128K x 8 LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62C1024AL/IS65C1024AL is a low power, 131,072-word by 8-bit CMOS static RAM. It is fabricated using high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices.

128K x 8 LOW POWER CMOS STATIC RAM

FEATURES • High-speed access time: 35, 45 ns • Low active power: 100 mW (typical) • Low standby power: 20 μW (typical) CMOS standby • Output Enable (OE) and two Chip Enable (CE1 and CE2) inputs for ease in applications • Fully static operation: no clock or refresh required • TTL compatibl

封装/外壳：32-TFSOP（0.724"，18.40mm 宽） 包装：托盘 描述：IC SRAM 1MBIT PARALLEL 32TSOP I 集成电路（IC） 存储器

封装/外壳：32-TFSOP（0.724"，18.40mm 宽） 包装：管件 描述：IC SRAM 1MBIT PARALLEL 32TSOP I 集成电路（IC） 存储器

128K x 8 Low Power CMOS SRAM

文件：142.28 Kbytes Page：9 Pages

128K x 8 Low Power CMOS SRAM

文件：142.28 Kbytes Page：9 Pages

128K x 8 Low Power CMOS SRAM

文件：142.28 Kbytes Page：9 Pages

128K x 8 Low Power CMOS SRAM

文件：142.28 Kbytes Page：9 Pages

128K x 8 Low Power CMOS SRAM

文件：142.28 Kbytes Page：9 Pages