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IS62C1024价格

参考价格：￥56.7567

型号：IS62C10248AL-55TLI 品牌：ISSI 备注：这里有IS62C1024多少钱，2026年最近7天走势，今日出价，今日竞价，IS62C1024批发/采购报价，IS62C1024行情走势销售排行榜，IS62C1024报价。

型号	功能描述	生产厂家企业	LOGO
IS62C1024	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ISSI 矽成半导体	ISSI
IS62C1024	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ICSI	ICSI
IS62C1024-35Q	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ISSI 矽成半导体	ISSI
IS62C1024-35Q	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ICSI	ICSI
IS62C1024-35QI	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ISSI 矽成半导体	ISSI
IS62C1024-35QI	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ICSI	ICSI
IS62C1024-35T	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ICSI	ICSI
IS62C1024-35T	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ISSI 矽成半导体	ISSI
IS62C1024-35TI	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ISSI 矽成半导体	ISSI
IS62C1024-35TI	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ICSI	ICSI
IS62C1024-35W	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ICSI	ICSI
IS62C1024-35WI	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ICSI	ICSI
IS62C1024-45Q	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ICSI	ICSI
IS62C1024-45Q	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ISSI 矽成半导体	ISSI
IS62C1024-45QI	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ISSI 矽成半导体	ISSI
IS62C1024-45QI	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ICSI	ICSI
IS62C1024-45T	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ICSI	ICSI
IS62C1024-45T	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ISSI 矽成半导体	ISSI
IS62C1024-45TI	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ISSI 矽成半导体	ISSI
IS62C1024-45TI	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ICSI	ICSI
IS62C1024-45W	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ICSI	ICSI
IS62C1024-45WI	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ICSI	ICSI
IS62C1024-55Q	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ICSI	ICSI
IS62C1024-55Q	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ISSI 矽成半导体	ISSI
IS62C1024-55QI	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ISSI 矽成半导体	ISSI
IS62C1024-55QI	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ICSI	ICSI
IS62C1024-55T	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ISSI 矽成半导体	ISSI
IS62C1024-55T	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ICSI	ICSI
IS62C1024-55TI	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ICSI	ICSI
IS62C1024-55TI	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ISSI 矽成半导体	ISSI
IS62C1024-55W	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ICSI	ICSI
IS62C1024-55WI	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ICSI	ICSI
IS62C1024-70Q	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ISSI 矽成半导体	ISSI
IS62C1024-70Q	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ICSI	ICSI
IS62C1024-70QI	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ISSI 矽成半导体	ISSI
IS62C1024-70QI	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ICSI	ICSI
IS62C1024-70T	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ICSI	ICSI
IS62C1024-70T	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ISSI 矽成半导体	ISSI
IS62C1024-70TI	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ISSI 矽成半导体	ISSI
IS62C1024-70TI	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ICSI	ICSI
IS62C1024-70W	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ICSI	ICSI
IS62C1024-70WI	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ICSI	ICSI
IS62C10248AL	1M x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 45ns, 55ns • CMOS low power operation – 36 mW (typical) operating – 12 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply – 4.5V--5.5V Vdd • Three state outputs • Automotive temperature (-40oC to +125oC) • Lead-free availa	ISSI 矽成半导体	ISSI
IS62C10248AL	5V Low Power Asynchronous SRAM ·Broad Solution:- x8, x16, and x32 configurations available- 5V/3.3V/1.8V VDD Power Supply- Commercial, Industrial, and Automotive Temperature (-40 °C to 125 °C) support- BGA, SOJ, SOP, sTSOP, TSOP packages available\n·ECC feature available for High Speed Asynchronous SRAMs\n·Long-term support	ISSI 矽成半导体	ISSI
IS62C10248AL_V01	1M x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 45ns, 55ns • CMOS low power operation – 36 mW (typical) operating – 12 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply – 4.5V--5.5V Vdd • Three state outputs • Automotive temperature (-40oC to +125oC) • Lead-free availa	ISSI 矽成半导体	ISSI
IS62C10248AL-55MLI	1M x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 45ns, 55ns • CMOS low power operation – 36 mW (typical) operating – 12 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply – 4.5V--5.5V Vdd • Three state outputs • Automotive temperature (-40oC to +125oC) • Lead-free availa	ISSI 矽成半导体	ISSI
IS62C10248AL-55TLI	1M x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 45ns, 55ns • CMOS low power operation – 36 mW (typical) operating – 12 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply – 4.5V--5.5V Vdd • Three state outputs • Automotive temperature (-40oC to +125oC) • Lead-free availa	ISSI 矽成半导体	ISSI
IS62C1024AL	128K x 8 LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 35, 45 ns • Low active power: 100 mW (typical) • Low standby power: 20 μW (typical) CMOS standby • Output Enable (OE) and two Chip Enable (CE1 and CE2) inputs for ease in applications • Fully static operation: no clock or refresh required • TTL compatibl	ISSI 矽成半导体	ISSI
IS62C1024AL	5V Low Power Asynchronous SRAM ·Broad Solution:- x8, x16, and x32 configurations available- 5V/3.3V/1.8V VDD Power Supply- Commercial, Industrial, and Automotive Temperature (-40 °C to 125 °C) support- BGA, SOJ, SOP, sTSOP, TSOP packages available\n·ECC feature available for High Speed Asynchronous SRAMs\n·Long-term support	ISSI 矽成半导体	ISSI
IS62C1024AL	128K x 8 LOW POWER CMOS STATIC RAM DESCRIPTION The ISSI IS62C1024AL/IS65C1024AL is a low power, 131,072-word by 8-bit CMOS static RAM. It is fabricated using high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices.	ISSI 矽成半导体	ISSI
IS62C1024AL_V01	128K x 8 LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 35, 45 ns • Low active power: 100 mW (typical) • Low standby power: 20 μW (typical) CMOS standby • Output Enable (OE) and two Chip Enable (CE1 and CE2) inputs for ease in applications • Fully static operation: no clock or refresh required • TTL compatibl	ISSI 矽成半导体	ISSI
IS62C1024AL-35Q	128K x 8 LOW POWER CMOS STATIC RAM DESCRIPTION The ISSI IS62C1024AL/IS65C1024AL is a low power, 131,072-word by 8-bit CMOS static RAM. It is fabricated using high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices.	ISSI 矽成半导体	ISSI
IS62C1024AL-35QI	128K x 8 LOW POWER CMOS STATIC RAM DESCRIPTION The ISSI IS62C1024AL/IS65C1024AL is a low power, 131,072-word by 8-bit CMOS static RAM. It is fabricated using high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices.	ISSI 矽成半导体	ISSI
IS62C1024AL-35QLI	128K x 8 LOW POWER CMOS STATIC RAM DESCRIPTION The ISSI IS62C1024AL/IS65C1024AL is a low power, 131,072-word by 8-bit CMOS static RAM. It is fabricated using high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices.	ISSI 矽成半导体	ISSI
IS62C1024AL-35QLI	128K x 8 LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 35, 45 ns • Low active power: 100 mW (typical) • Low standby power: 20 μW (typical) CMOS standby • Output Enable (OE) and two Chip Enable (CE1 and CE2) inputs for ease in applications • Fully static operation: no clock or refresh required • TTL compatibl	ISSI 矽成半导体	ISSI
IS62C1024AL-35T	128K x 8 LOW POWER CMOS STATIC RAM DESCRIPTION The ISSI IS62C1024AL/IS65C1024AL is a low power, 131,072-word by 8-bit CMOS static RAM. It is fabricated using high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices.	ISSI 矽成半导体	ISSI
IS62C1024AL-35TI	128K x 8 LOW POWER CMOS STATIC RAM DESCRIPTION The ISSI IS62C1024AL/IS65C1024AL is a low power, 131,072-word by 8-bit CMOS static RAM. It is fabricated using high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices.	ISSI 矽成半导体	ISSI
IS62C1024AL-35TLI	128K x 8 LOW POWER CMOS STATIC RAM DESCRIPTION The ISSI IS62C1024AL/IS65C1024AL is a low power, 131,072-word by 8-bit CMOS static RAM. It is fabricated using high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices.	ISSI 矽成半导体	ISSI
IS62C1024AL-35TLI	128K x 8 LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 35, 45 ns • Low active power: 100 mW (typical) • Low standby power: 20 μW (typical) CMOS standby • Output Enable (OE) and two Chip Enable (CE1 and CE2) inputs for ease in applications • Fully static operation: no clock or refresh required • TTL compatibl	ISSI 矽成半导体	ISSI
IS62C1024L	128K x 8 LOW POWER CMOS STATIC RAM DESCRIPTION\nThe ISSIIS62C1024L is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices.FEATURES\n• • High-speed access time: 35, 70 ns\n• Low active power: 450 mW (typical)\n• Low standby power: 150 µW (typical) CMOS standby\n• Output Enable (OE) and two Chip Enable (CE1and CE2) inputs for ease in applications\n• Fully static operation: no clock or refresh required\n• TTL compatible inputs and ou;	ISSI 矽成半导体	ISSI

IS62C1024产品属性

类型
描述
型号
IS62C1024
制造商
ISSI
制造商全称
Integrated Silicon Solution, Inc
功能描述
128K x 8 HIGH-SPEED CMOS STATIC RAM

IS62C1024供应商更多...

更新时间：2026-5-13 23:00:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市高捷芯城科技有限公司	IS62C1024AL-35QLI	ISSI(美国芯成)	26+	SOP-32-11.3mm	10548	原厂订货渠道,支持账期,一站式服务!	询价
深圳市凌旭科技有限公司	IS62C1024L-70Q	ISSI	2016+	SOP32	3500	只做原装,假一罚十,公司可开17%增值税发票!	询价
中天科工半导体（深圳）有限公司	IS62C1024L-70Q	ISSI	存储器	SOP32	41983	ISSI存储芯片IS62C1024L-70Q即刻询购立享优惠#长期有货	询价
深圳市科恒伟业电子有限公司	IS62C1024AL-35QLI	ISSI	2430+	SOP32	8540	只做原装正品假一赔十为客户做到零风险!!	询价
深圳市富达微科技有限公司	IS62C1024AL-35TLI-TR	ISSI	24+	32-TFSOP	30000	原厂原装,价格优势,欢迎洽谈!	询价
标准国际(香港)有限公司	IS62C1024AL-35QLI	ISSI	25+	ROHS	810	全新原装!优势库存热卖中!	询价
深圳市拓亿芯电子有限公司	IS62C1024AL-35QLI	ISSI	25+	SOP32	12500	全新原装现货,假一赔十	询价
瀚佳科技(深圳)有限公司	IS62C1024AL-35TLI	ISSI	24+	TSOP	9800	一级代理/全新原装现货/长期供应!	询价
深圳市正迈科技有限公司	IS62C1024L-70Q	ISSI	23+	SOP	20000	原装进口ICMCUSOCMOS等知名国内外品牌只做原装全	询价
深圳市美思瑞电子科技有限公司	IS62C1024LL-70Q	ISSI	22+	TSOP32	21455	原装正品，实单请联系	询价

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