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IS62C1024价格

参考价格：￥56.7567

型号：IS62C10248AL-55TLI 品牌：ISSI 备注：这里有IS62C1024多少钱，2026年最近7天走势，今日出价，今日竞价，IS62C1024批发/采购报价，IS62C1024行情走势销售排行榜，IS62C1024报价。

型号	功能描述	生产厂家企业	LOGO
IS62C1024	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ISSI 矽成半导体	ISSI
IS62C1024	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ICSI	ICSI
IS62C1024-35Q	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ISSI 矽成半导体	ISSI
IS62C1024-35Q	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ICSI	ICSI
IS62C1024-35QI	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ISSI 矽成半导体	ISSI
IS62C1024-35QI	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ICSI	ICSI
IS62C1024-35T	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ICSI	ICSI
IS62C1024-35T	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ISSI 矽成半导体	ISSI
IS62C1024-35TI	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ISSI 矽成半导体	ISSI
IS62C1024-35TI	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ICSI	ICSI
IS62C1024-35W	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ICSI	ICSI
IS62C1024-35WI	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ICSI	ICSI
IS62C1024-45Q	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ICSI	ICSI
IS62C1024-45Q	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ISSI 矽成半导体	ISSI
IS62C1024-45QI	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ISSI 矽成半导体	ISSI
IS62C1024-45QI	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ICSI	ICSI
IS62C1024-45T	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ICSI	ICSI
IS62C1024-45T	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ISSI 矽成半导体	ISSI
IS62C1024-45TI	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ISSI 矽成半导体	ISSI
IS62C1024-45TI	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ICSI	ICSI
IS62C1024-45W	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ICSI	ICSI
IS62C1024-45WI	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ICSI	ICSI
IS62C1024-55Q	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ICSI	ICSI
IS62C1024-55Q	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ISSI 矽成半导体	ISSI
IS62C1024-55QI	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ISSI 矽成半导体	ISSI
IS62C1024-55QI	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ICSI	ICSI
IS62C1024-55T	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ISSI 矽成半导体	ISSI
IS62C1024-55T	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ICSI	ICSI
IS62C1024-55TI	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ICSI	ICSI
IS62C1024-55TI	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ISSI 矽成半导体	ISSI
IS62C1024-55W	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ICSI	ICSI
IS62C1024-55WI	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ICSI	ICSI
IS62C1024-70Q	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ISSI 矽成半导体	ISSI
IS62C1024-70Q	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ICSI	ICSI
IS62C1024-70QI	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ISSI 矽成半导体	ISSI
IS62C1024-70QI	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ICSI	ICSI
IS62C1024-70T	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ICSI	ICSI
IS62C1024-70T	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ISSI 矽成半导体	ISSI
IS62C1024-70TI	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ISSI 矽成半导体	ISSI
IS62C1024-70TI	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ICSI	ICSI
IS62C1024-70W	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ICSI	ICSI
IS62C1024-70WI	128K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE	ICSI	ICSI
IS62C10248AL	1M x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 45ns, 55ns • CMOS low power operation – 36 mW (typical) operating – 12 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply – 4.5V--5.5V Vdd • Three state outputs • Automotive temperature (-40oC to +125oC) • Lead-free availa	ISSI 矽成半导体	ISSI
IS62C10248AL_V01	1M x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 45ns, 55ns • CMOS low power operation – 36 mW (typical) operating – 12 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply – 4.5V--5.5V Vdd • Three state outputs • Automotive temperature (-40oC to +125oC) • Lead-free availa	ISSI 矽成半导体	ISSI
IS62C10248AL-55MLI	1M x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 45ns, 55ns • CMOS low power operation – 36 mW (typical) operating – 12 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply – 4.5V--5.5V Vdd • Three state outputs • Automotive temperature (-40oC to +125oC) • Lead-free availa	ISSI 矽成半导体	ISSI
IS62C10248AL-55TLI	1M x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 45ns, 55ns • CMOS low power operation – 36 mW (typical) operating – 12 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply – 4.5V--5.5V Vdd • Three state outputs • Automotive temperature (-40oC to +125oC) • Lead-free availa	ISSI 矽成半导体	ISSI
IS62C1024AL	128K x 8 LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 35, 45 ns • Low active power: 100 mW (typical) • Low standby power: 20 μW (typical) CMOS standby • Output Enable (OE) and two Chip Enable (CE1 and CE2) inputs for ease in applications • Fully static operation: no clock or refresh required • TTL compatibl	ISSI 矽成半导体	ISSI
IS62C1024AL	128K x 8 LOW POWER CMOS STATIC RAM DESCRIPTION The ISSI IS62C1024AL/IS65C1024AL is a low power, 131,072-word by 8-bit CMOS static RAM. It is fabricated using high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices.	ISSI 矽成半导体	ISSI
IS62C1024AL_V01	128K x 8 LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 35, 45 ns • Low active power: 100 mW (typical) • Low standby power: 20 μW (typical) CMOS standby • Output Enable (OE) and two Chip Enable (CE1 and CE2) inputs for ease in applications • Fully static operation: no clock or refresh required • TTL compatibl	ISSI 矽成半导体	ISSI
IS62C1024AL-35Q	128K x 8 LOW POWER CMOS STATIC RAM DESCRIPTION The ISSI IS62C1024AL/IS65C1024AL is a low power, 131,072-word by 8-bit CMOS static RAM. It is fabricated using high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices.	ISSI 矽成半导体	ISSI
IS62C1024AL-35QI	128K x 8 LOW POWER CMOS STATIC RAM DESCRIPTION The ISSI IS62C1024AL/IS65C1024AL is a low power, 131,072-word by 8-bit CMOS static RAM. It is fabricated using high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices.	ISSI 矽成半导体	ISSI
IS62C1024AL-35QLI	128K x 8 LOW POWER CMOS STATIC RAM DESCRIPTION The ISSI IS62C1024AL/IS65C1024AL is a low power, 131,072-word by 8-bit CMOS static RAM. It is fabricated using high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices.	ISSI 矽成半导体	ISSI
IS62C1024AL-35QLI	128K x 8 LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 35, 45 ns • Low active power: 100 mW (typical) • Low standby power: 20 μW (typical) CMOS standby • Output Enable (OE) and two Chip Enable (CE1 and CE2) inputs for ease in applications • Fully static operation: no clock or refresh required • TTL compatibl	ISSI 矽成半导体	ISSI
IS62C1024AL-35T	128K x 8 LOW POWER CMOS STATIC RAM DESCRIPTION The ISSI IS62C1024AL/IS65C1024AL is a low power, 131,072-word by 8-bit CMOS static RAM. It is fabricated using high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices.	ISSI 矽成半导体	ISSI
IS62C1024AL-35TI	128K x 8 LOW POWER CMOS STATIC RAM DESCRIPTION The ISSI IS62C1024AL/IS65C1024AL is a low power, 131,072-word by 8-bit CMOS static RAM. It is fabricated using high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices.	ISSI 矽成半导体	ISSI
IS62C1024AL-35TLI	128K x 8 LOW POWER CMOS STATIC RAM DESCRIPTION The ISSI IS62C1024AL/IS65C1024AL is a low power, 131,072-word by 8-bit CMOS static RAM. It is fabricated using high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices.	ISSI 矽成半导体	ISSI
IS62C1024AL-35TLI	128K x 8 LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 35, 45 ns • Low active power: 100 mW (typical) • Low standby power: 20 μW (typical) CMOS standby • Output Enable (OE) and two Chip Enable (CE1 and CE2) inputs for ease in applications • Fully static operation: no clock or refresh required • TTL compatibl	ISSI 矽成半导体	ISSI
IS62C10248AL	5V Low Power Asynchronous SRAM	ISSI 矽成半导体	ISSI
IS62C10248AL	1M x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM 文件：393.53 Kbytes Page：14 Pages	ISSI 矽成半导体	ISSI
IS62C10248AL-55MLI	1M x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM 文件：393.53 Kbytes Page：14 Pages	ISSI 矽成半导体	ISSI

IS62C1024产品属性

类型
描述
型号
IS62C1024
制造商
ISSI
制造商全称
Integrated Silicon Solution, Inc
功能描述
128K x 8 HIGH-SPEED CMOS STATIC RAM

IS62C1024供应商更多...

更新时间：2026-3-2 22:58:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市凌旭科技有限公司	IS62C1024L-70Q	ISSI	2016+	SOP32	3500	只做原装,假一罚十,公司可开17%增值税发票!	询价
中天科工半导体（深圳）有限公司	IS62C1024L-70Q	ISSI	存储器	SOP32	41983	ISSI存储芯片IS62C1024L-70Q即刻询购立享优惠#长期有货	询价
深圳市科恒伟业电子有限公司	IS62C1024AL-35QLI	ISSI	2430+	SOP32	8540	只做原装正品假一赔十为客户做到零风险!!	询价
深圳市富达微科技有限公司	IS62C1024AL-35TLI-TR	ISSI	24+	32-TFSOP	30000	原厂原装,价格优势,欢迎洽谈!	询价
标准国际(香港)有限公司	IS62C1024AL-35QLI	ISSI	25+	ROHS	810	全新原装!优势库存热卖中!	询价
深圳市羿芯诚电子有限公司	IS62C1024-70Q	ISSI	20+	SOP	2860	原厂原装正品价格优惠公司现货欢迎查询	询价
千层芯半导体(深圳)有限公司	IS62C1024AL-35TLI	ISSI	24+	TSOP-32	6800	100%原装进口现货,欢迎来电咨询	询价
深圳市拓亿芯电子有限公司	IS62C1024AL-35QLI	ISSI	25+	SOP32	12500	全新原装现货,假一赔十	询价
深圳市中飞凌科技有限公司	IS62C1024AL-35TLI	ISSI	26+	32-TFSOP	60000	只有原装,可BOM表配单	询价
深圳市宏捷佳电子科技有限公司	IS62C1024L-70Q	ISSI	2023+	SOP	53500	正品,原装现货	询价

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产品属性属性值搜索类似制造商: ISSI 产品种类: 静态随机存取存储器存储容量: 4 Mbit 访问时间: 8.5 ns 最大时钟频率: 90 MHz 电源电压-最大: 3.63 V 电源电压-最小: 3.135 V 电源电流—最大值: 230 mA 最小工作温度: 0 C 最大工作温度: + 70 C 安装风格: SMD/SMT 封装 / 箱体: TQFP-100 数
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IS61LV256AH-15JI，IS61LV256AH-10T，IS61LV256AH-10TI，IS61LV256AH-12J，IS61LV2568L-12TI，IS61LV2568L-10TLI，IS61LV2568L-10K，IS61LV2568-12T，IS61LV2568-12K，IS61LV2568-15T
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IS62C256AL-45TLI进口原装假一赔十
瀚佳科技(深圳）有限公司：专业销售集成电路IC.单片机.内存闪存.二三级管模块等电子元器件。
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IS62C1024价格

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IS62WV51216BLL-55TL

IS62WV12816EBLL-45BLI

IS61SF12832-8.5TQ

IS61SF12832-8.5TQ

IS61LV256AH-15JI，IS61LV256AH-10T，IS61LV256AH-10TI，IS61LV256AH-12J，IS61LV2568L-12TI，IS61LV2568L-10TLI，IS61LV2568L-10K，IS61LV2568-12T，IS61LV2568-12K，IS61LV2568-15T

IS62C256AL-45TLI进口原装假一赔十

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