1M x 8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC

FEATURES • High-speed access times: 8, 10, 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE options • CE power-down • Fully static operation: no clock or refresh required • TTL compat

High Speed Low Power Asynchronous SRAM

TTL compatible inputs and outputs

文件：814.25 Kbytes Page：18 Pages

1M x 8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC

FEATURES • High-speed access times: 8, 10, 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE options • CE power-down • Fully static operation: no clock or refresh required • TTL compat

1M x 8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC

FEATURES • High-speed access times: 8, 10, 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE options • CE power-down • Fully static operation: no clock or refresh required • TTL compat

1M x 8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC

FEATURES • High-speed access times: 8, 10, 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE options • CE power-down • Fully static operation: no clock or refresh required • TTL compat

1M x 8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC

FEATURES • High-speed access times: 8, 10, 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE options • CE power-down • Fully static operation: no clock or refresh required • TTL compat

1M x 8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC

FEATURES • High-speed access times: 8, 10, 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE options • CE power-down • Fully static operation: no clock or refresh required • TTL compat

1M x 8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC

FEATURES • High-speed access times: 8, 10, 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE options • CE power-down • Fully static operation: no clock or refresh required • TTL compat

1M x 8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC

FEATURES • High-speed access times: 8, 10, 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE options • CE power-down • Fully static operation: no clock or refresh required • TTL compat

封装/外壳：48-TFBGA 包装：卷带（TR） 描述：IC SRAM 8MBIT PARALLEL 48MINIBGA 集成电路（IC） 存储器

封装/外壳：44-TSOP（0.400"，10.16mm 宽） 包装：托盘 描述：IC SRAM 8MBIT PARALLEL 44TSOP II 集成电路（IC） 存储器

1M x 8 HIGH-SPEED CMOS STATIC RAM

FEATURES • High-speed access times: 8, 10, 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE options • CE power-down • Fully static operation: no clock or refresh required • TTL compat

1M x 8 HIGH-SPEED CMOS STATIC RAM

FEATURES • High-speed access times: 8, 10, 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE options • CE power-down • Fully static operation: no clock or refresh required • TTL compat

1M x 8 HIGH-SPEED CMOS STATIC RAM

文件：198.94 Kbytes Page：20 Pages

1M x 8 HIGH-SPEED CMOS STATIC RAM

文件：198.94 Kbytes Page：20 Pages