位置：首页 > IC中文资料 > IS61WV10248EDBLL-10BLI-TR
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IS61WV10248EDBLL-10BLI-TR | 封装/外壳：48-TFBGA 包装：卷带（TR） 描述：IC SRAM 8MBIT PARALLEL 48MINIBGA 集成电路（IC） 存储器 | ETC 知名厂家 | ETC |   |
1M x 8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC FEATURES • High-speed access times: 8, 10, 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE options • CE power-down • Fully static operation: no clock or refresh required • TTL compat | ISSI 矽成半导体 | | ||
1M x 8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC FEATURES • High-speed access times: 8, 10, 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE options • CE power-down • Fully static operation: no clock or refresh required • TTL compat | ISSI 矽成半导体 | | ||
1M x 8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC FEATURES • High-speed access times: 8, 10, 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE options • CE power-down • Fully static operation: no clock or refresh required • TTL compat | ISSI 矽成半导体 | | ||
1M x 8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC FEATURES • High-speed access times: 8, 10, 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE options • CE power-down • Fully static operation: no clock or refresh required • TTL compat | ISSI 矽成半导体 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ISSI(美国芯成) |
24+ |
TSOPII44 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
ISSI/芯成 |
2450+ |
TSOP44 |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
ISSI |
12+ |
TSOP |
100 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ISSI |
24+ |
SMD |
15600 |
静态随机存取存储器8M |
|||
ISSI, |
25+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
||||
ISSI |
24+ |
TSSOP |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
ISSI Integrated Silicon Soluti |
22+ |
44TSOP2 (10.2x18.4) |
9000 |
原厂渠道,现货配单 |
|||
ISSI |
1708+ |
? |
8450 |
只做原装进口,假一罚十 |
|||
ISSI(美国芯成) |
2447 |
TSOPII-44 |
315000 |
135个/托盘一级代理专营品牌!原装正品,优势现货,长 |
|||
ISSI(美国芯成) |
25+ |
TSOPII-44-10.2mm |
500000 |
源自原厂成本,高价回收工厂呆滞 |
IS61WV10248EDBLL-10BLI-TR芯片相关品牌
IS61WV10248EDBLL-10BLI-TR规格书下载地址
IS61WV10248EDBLL-10BLI-TR参数引脚图相关
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IS61WV10248EDBLL-10BLI-TR数据表相关新闻
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2022-7-1IS62WV12816EBLL-45BLI
IS62WV12816EBLL-45BLI
2021-10-11IS61SF12832-8.5TQ
产品属性 属性值 搜索类似 制造商: ISSI 产品种类: 静态随机存取存储器 存储容量: 4 Mbit 访问时间: 8.5 ns 最大时钟频率: 90 MHz 电源电压-最大: 3.63 V 电源电压-最小: 3.135 V 电源电流—最大值: 230 mA 最小工作温度: 0 C 最大工作温度: + 70 C 安装风格: SMD/SMT 封装 / 箱体: TQFP-100 数
2020-7-13IS61SF12832-8.5TQ
原装正品 热卖 假一赔十
2020-7-13IS61LV256AH-15JI，IS61LV256AH-10T，IS61LV256AH-10TI，IS61LV256AH-12J，IS61LV2568L-12TI，IS61LV2568L-10TLI，IS61LV2568L-10K，IS61LV2568-12T，IS61LV2568-12K，IS61LV2568-15T
IS61LV256AH-15JI，IS61LV256AH-10T，IS61LV256AH-10TI，IS61LV256AH-12J，IS61LV2568L-12TI，IS61LV2568L-10TLI，IS61LV2568L-10K，IS61LV2568-12T，IS61LV2568-12K，IS61LV2568-15T
2020-1-1IS62C256AL-45TLI进口原装假一赔十
瀚佳科技(深圳）有限公司： 专业销售集成电路IC.单片机.内存闪存.二三级管模块等电子元器件。
2018-12-30
DdatasheetPDF页码索引
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