型号 功能描述 生产厂家 企业 LOGO 操作
IS61WV10248ALL

1M x 8 HIGH-SPEED CMOS STATIC RAM

FEATURES • High-speed access times: 8, 10, 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE options • CE power-down • Fully static operation: no clock or refresh required • TTL compat

ISSI

矽成半导体

IS61WV10248ALL

1M x 8 HIGH-SPEED CMOS STATIC RAM

文件:198.94 Kbytes Page:20 Pages

ISSI

矽成半导体

1M x 8 HIGH-SPEED CMOS STATIC RAM

FEATURES • High-speed access times: 8, 10, 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE options • CE power-down • Fully static operation: no clock or refresh required • TTL compat

ISSI

矽成半导体

1M x 8 HIGH-SPEED CMOS STATIC RAM

FEATURES • High-speed access times: 8, 10, 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE options • CE power-down • Fully static operation: no clock or refresh required • TTL compat

ISSI

矽成半导体

1M x 8 HIGH-SPEED CMOS STATIC RAM

FEATURES • High-speed access times: 8, 10, 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE options • CE power-down • Fully static operation: no clock or refresh required • TTL compat

ISSI

矽成半导体

1M x 8 HIGH-SPEED CMOS STATIC RAM

FEATURES • High-speed access times: 8, 10, 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE options • CE power-down • Fully static operation: no clock or refresh required • TTL compat

ISSI

矽成半导体

Asynchronous SRAM

ISSI

矽成半导体

1M x 8 HIGH-SPEED CMOS STATIC RAM

文件:198.94 Kbytes Page:20 Pages

ISSI

矽成半导体

1M x 8 HIGH-SPEED CMOS STATIC RAM

文件:198.94 Kbytes Page:20 Pages

ISSI

矽成半导体

1M x 8 HIGH-SPEED CMOS STATIC RAM

FEATURES • High-speed access times: 8, 10, 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE options • CE power-down • Fully static operation: no clock or refresh required • TTL compat

ISSI

矽成半导体

1M x 8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC

FEATURES • High-speed access times: 8, 10, 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE options • CE power-down • Fully static operation: no clock or refresh required • TTL compat

ISSI

矽成半导体

1M x 8 HIGH-SPEED CMOS STATIC RAM

文件:198.94 Kbytes Page:20 Pages

ISSI

矽成半导体

更新时间:2025-12-15 17:26:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ISSI
24+
BGA(48)
12000
专营ISSI进口原装正品假一赔十可開17增值稅票
ISSI, Integrated Silicon Solut
21+
60-TFBGA
5280
进口原装!长期供应!绝对优势价格(诚信经营
ISSI
23+
48-迷你型BGA(9x11)
3200
专业分销产品!原装正品!价格优势!
ISSI,
25+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
ISSI
24+
BGA48
39500
进口原装现货 支持实单价优
ISSI
17+
TSOP
6200
100%原装正品现货
ISSI
25+
MBGA48
3850
百分百原装正品 真实公司现货库存 本公司只做原装 可
ISSI(美国芯成)
24+
TFBGA48(9x11)
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
ISSI
25+
TSOP
4500
原装正品!公司现货!欢迎来电!
ISSI Integrated Silicon Soluti
22+
48miniBGA (9x11)
9000
原厂渠道,现货配单

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