32K x 16 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ISSI IS61C3216AL is high-speed, 512Kb static RAMs organized as 32,768 words by 16 bits. They are fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with low po

32K x 16 HIGH-SPEED CMOS STATIC RAM

FEATURES • High-speed access time: 12 ns • Low Active Power: 175 mW (typical) • Low Standby Power: 1 mW (typical) CMOS standby • TTL compatible interface levels • Single 5V ± 10% power supply • Fully static operation: no clock or refresh required • Available in 44-pin TSOP (Type II) p

5V High-Speed Asynchronous SRAM

32K x 16 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ICSI IS61C3216 is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumption.

32K x 16 HIGH-SPEED CMOS STATIC RAM

FEATURES • High-speed access time: 12 ns • Low Active Power: 175 mW (typical) • Low Standby Power: 1 mW (typical) CMOS standby • TTL compatible interface levels • Single 5V ± 10% power supply • Fully static operation: no clock or refresh required • Available in 44-pin TSOP (Type II) p

32K x 16 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ISSI IS61C3216AL is high-speed, 512Kb static RAMs organized as 32,768 words by 16 bits. They are fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with low po

32K x 16 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ISSI IS61C3216AL is high-speed, 512Kb static RAMs organized as 32,768 words by 16 bits. They are fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with low po

32K x 16 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ISSI IS61C3216AL is high-speed, 512Kb static RAMs organized as 32,768 words by 16 bits. They are fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with low po

32K x 16 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ISSI IS61C3216AL is high-speed, 512Kb static RAMs organized as 32,768 words by 16 bits. They are fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with low po

32K x 16 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ISSI IS61C3216AL is high-speed, 512Kb static RAMs organized as 32,768 words by 16 bits. They are fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with low po

32K x 16 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ISSI IS61C3216AL is high-speed, 512Kb static RAMs organized as 32,768 words by 16 bits. They are fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with low po

32K x 16 HIGH-SPEED CMOS STATIC RAM

FEATURES • High-speed access time: 12 ns • Low Active Power: 175 mW (typical) • Low Standby Power: 1 mW (typical) CMOS standby • TTL compatible interface levels • Single 5V ± 10% power supply • Fully static operation: no clock or refresh required • Available in 44-pin TSOP (Type II) p

封装/外壳：44-BSOJ（0.400"，10.16mm 宽） 包装：卷带（TR） 描述：IC SRAM 512KBIT PARALLEL 44SOJ 集成电路（IC） 存储器

封装/外壳：44-TSOP（0.400"，10.16mm 宽） 包装：卷带（TR） 描述：IC SRAM 512KBIT PAR 44TSOP II 集成电路（IC） 存储器

32K x 16 HIGH-SPEED CMOS STATIC RAM

32K x 16 HIGH-SPEED CMOS STATIC RAM