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位置：首页 > IC中文资料第6797页 > IS61C3216

IS61C3216价格

参考价格：￥12.3700

型号：IS61C3216AL-12TLI 品牌：ISSI 备注：这里有IS61C3216多少钱，2025年最近7天走势，今日出价，今日竞价，IS61C3216批发/采购报价，IS61C3216行情走势销售排行榜，IS61C3216报价。

型号	功能描述	生产厂家企业	LOGO
IS61C3216	32K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS61C3216 is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumption.	ICSI	ICSI
IS61C3216	ASYNCHRONOUS STATIC RAM, High Speed A.SRAM	ISSI 矽成半导体	ISSI
IS61C3216-10K	32K x 16 HIGH-SPEED CMOS STATIC RAM 32K x 16 HIGH-SPEED CMOS STATIC RAM	ISSI 矽成半导体	ISSI
IS61C3216-10K	32K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS61C3216 is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumption.	ICSI	ICSI
IS61C3216-10T	32K x 16 HIGH-SPEED CMOS STATIC RAM 32K x 16 HIGH-SPEED CMOS STATIC RAM	ISSI 矽成半导体	ISSI
IS61C3216-10T	32K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS61C3216 is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumption.	ICSI	ICSI
IS61C3216-12K	32K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS61C3216 is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumption.	ICSI	ICSI
IS61C3216-12K	32K x 16 HIGH-SPEED CMOS STATIC RAM 32K x 16 HIGH-SPEED CMOS STATIC RAM	ISSI 矽成半导体	ISSI
IS61C3216-12KI	32K x 16 HIGH-SPEED CMOS STATIC RAM 32K x 16 HIGH-SPEED CMOS STATIC RAM	ISSI 矽成半导体	ISSI
IS61C3216-12KI	32K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS61C3216 is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumption.	ICSI	ICSI
IS61C3216-12T	32K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS61C3216 is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumption.	ICSI	ICSI
IS61C3216-12T	32K x 16 HIGH-SPEED CMOS STATIC RAM 32K x 16 HIGH-SPEED CMOS STATIC RAM	ISSI 矽成半导体	ISSI
IS61C3216-12TI	32K x 16 HIGH-SPEED CMOS STATIC RAM 32K x 16 HIGH-SPEED CMOS STATIC RAM	ISSI 矽成半导体	ISSI
IS61C3216-12TI	32K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS61C3216 is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumption.	ICSI	ICSI
IS61C3216-15K	32K x 16 HIGH-SPEED CMOS STATIC RAM 32K x 16 HIGH-SPEED CMOS STATIC RAM	ISSI 矽成半导体	ISSI
IS61C3216-15K	32K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS61C3216 is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumption.	ICSI	ICSI
IS61C3216-15KI	32K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS61C3216 is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumption.	ICSI	ICSI
IS61C3216-15KI	32K x 16 HIGH-SPEED CMOS STATIC RAM 32K x 16 HIGH-SPEED CMOS STATIC RAM	ISSI 矽成半导体	ISSI
IS61C3216-15T	32K x 16 HIGH-SPEED CMOS STATIC RAM 32K x 16 HIGH-SPEED CMOS STATIC RAM	ISSI 矽成半导体	ISSI
IS61C3216-15T	32K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS61C3216 is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumption.	ICSI	ICSI
IS61C3216-15TI	32K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS61C3216 is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumption.	ICSI	ICSI
IS61C3216-15TI	32K x 16 HIGH-SPEED CMOS STATIC RAM 32K x 16 HIGH-SPEED CMOS STATIC RAM	ISSI 矽成半导体	ISSI
IS61C3216-20K	32K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS61C3216 is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumption.	ICSI	ICSI
IS61C3216-20K	32K x 16 HIGH-SPEED CMOS STATIC RAM 32K x 16 HIGH-SPEED CMOS STATIC RAM	ISSI 矽成半导体	ISSI
IS61C3216-20KI	32K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS61C3216 is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumption.	ICSI	ICSI
IS61C3216-20KI	32K x 16 HIGH-SPEED CMOS STATIC RAM 32K x 16 HIGH-SPEED CMOS STATIC RAM	ISSI 矽成半导体	ISSI
IS61C3216-20T	32K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS61C3216 is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumption.	ICSI	ICSI
IS61C3216-20T	32K x 16 HIGH-SPEED CMOS STATIC RAM 32K x 16 HIGH-SPEED CMOS STATIC RAM	ISSI 矽成半导体	ISSI
IS61C3216-20TI	32K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS61C3216 is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumption.	ICSI	ICSI
IS61C3216-20TI	32K x 16 HIGH-SPEED CMOS STATIC RAM 32K x 16 HIGH-SPEED CMOS STATIC RAM	ISSI 矽成半导体	ISSI
IS61C3216AL	32K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C3216AL is high-speed, 512Kb static RAMs organized as 32,768 words by 16 bits. They are fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with low po	ISSI 矽成半导体	ISSI
IS61C3216AL	32K x 16 HIGH-SPEED CMOS STATIC RAM FEATURES • High-speed access time: 12 ns • Low Active Power: 175 mW (typical) • Low Standby Power: 1 mW (typical) CMOS standby • TTL compatible interface levels • Single 5V ± 10% power supply • Fully static operation: no clock or refresh required • Available in 44-pin TSOP (Type II) p	ISSI 矽成半导体	ISSI
IS61C3216AL_V01	32K x 16 HIGH-SPEED CMOS STATIC RAM FEATURES • High-speed access time: 12 ns • Low Active Power: 175 mW (typical) • Low Standby Power: 1 mW (typical) CMOS standby • TTL compatible interface levels • Single 5V ± 10% power supply • Fully static operation: no clock or refresh required • Available in 44-pin TSOP (Type II) p	ISSI 矽成半导体	ISSI
IS61C3216AL-12K	32K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C3216AL is high-speed, 512Kb static RAMs organized as 32,768 words by 16 bits. They are fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with low po	ISSI 矽成半导体	ISSI
IS61C3216AL-12KI	32K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C3216AL is high-speed, 512Kb static RAMs organized as 32,768 words by 16 bits. They are fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with low po	ISSI 矽成半导体	ISSI
IS61C3216AL-12KLI	32K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C3216AL is high-speed, 512Kb static RAMs organized as 32,768 words by 16 bits. They are fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with low po	ISSI 矽成半导体	ISSI
IS61C3216AL-12T	32K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C3216AL is high-speed, 512Kb static RAMs organized as 32,768 words by 16 bits. They are fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with low po	ISSI 矽成半导体	ISSI
IS61C3216AL-12TI	32K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C3216AL is high-speed, 512Kb static RAMs organized as 32,768 words by 16 bits. They are fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with low po	ISSI 矽成半导体	ISSI
IS61C3216AL-12TLI	32K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C3216AL is high-speed, 512Kb static RAMs organized as 32,768 words by 16 bits. They are fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with low po	ISSI 矽成半导体	ISSI
IS61C3216AL-12TLI	32K x 16 HIGH-SPEED CMOS STATIC RAM FEATURES • High-speed access time: 12 ns • Low Active Power: 175 mW (typical) • Low Standby Power: 1 mW (typical) CMOS standby • TTL compatible interface levels • Single 5V ± 10% power supply • Fully static operation: no clock or refresh required • Available in 44-pin TSOP (Type II) p	ISSI 矽成半导体	ISSI
IS61C3216AL	5V High-Speed Asynchronous SRAM	ISSI 矽成半导体	ISSI
IS61C3216AL-12KLI-TR	封装/外壳：44-BSOJ（0.400"，10.16mm 宽）包装：卷带（TR）描述：IC SRAM 512KBIT PARALLEL 44SOJ 集成电路（IC）存储器	ETC 知名厂家	ETC
IS61C3216AL-12TLI	封装/外壳：44-TSOP（0.400"，10.16mm 宽）包装：卷带（TR）描述：IC SRAM 512KBIT PAR 44TSOP II 集成电路（IC）存储器	ETC 知名厂家	ETC
61C3216	32K x 16 HIGH-SPEED CMOS STATIC RAM 32K x 16 HIGH-SPEED CMOS STATIC RAM	ISSI 矽成半导体	ISSI

IS61C3216产品属性

类型
描述
型号
IS61C3216
制造商
ICSI
制造商全称
Integrated Circuit Solution Inc
功能描述
32K x 16 HIGH-SPEED CMOS STATIC RAM

IS61C3216供应商更多...

更新时间：2025-11-20 14:36:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市宇集芯电子有限公司	IS61C3216-12KL	ISSI	24+	SOJ	12000	全新进口原装正品假一罚十	询价
千层芯半导体(深圳)有限公司	IS61C3216AL-12KLI	ISSI	24+	SOJ	42500	专营ISSI进口原装现货可开17增值税票	询价
深圳市莱克讯科技有限公司	IS61C3216B-12T	ICSI	1923+	TSOP	9865	原装进口现货库存专业工厂研究所配单供货	询价
深圳市冠亿通科技有限公司	IS61C3216AL-12KLI	ISSI,	25+		25000	原厂原包深圳现货主打品牌假一赔百可开票!	询价
深圳市亿联芯电子科技有限公司	IS61C3216-12K	ISSI	2023+	SOJ	8635	全新原装正品,优势价格	询价
深圳市力拓辉电子有限公司	IS61C3216-15T		22+		5000	只做原装鄙视假货15118075546	询价
深圳市昊创电子有限公司	IS61C3216AL-12TLI	ISSI	1902+	TSOP-40	2734	代理品牌	询价
深圳市纳艾斯科技有限公司	IS61C3216-15T	ISSI	24+	TSOP-44	80000	只做自己库存全新原装进口正品假一赔百可开13%增	询价
深圳市天芯威科技有限公司	IS61C3216AL-12TLI	ISSI	24+	n/a	25836	新到现货,只做原装进口	询价
中天科工半导体（深圳）有限公司	IS61C3216-12T	ISSI	20+	TSSOP	35830	原装优势主营型号-可开原型号增税票	询价

IS61C3216芯片相关品牌

IS61C3216规格书下载地址

IS61C3216参数引脚图相关

IS61C3216数据表相关新闻

IS61C1024AL-12KLI
进口代理
2022-9-21
IS61C5128AS-25TLI
进口代理
2022-8-10
IS61LV25616AL-10T现货热卖！！！！
IS61LV25616AL-10T现货热卖！！！！
2021-7-7
IS46TR16256AL-125KBLA2
4 Gbit FBGA-96 SDRAM - DDR3 动态随机存取存储器 , 2 Gbit SDRAM - DDR2 16 bit 动态随机存取存储器 , FBGA-84 16 bit 动态随机存取存储器 , 4 Gbit SDRAM - DDR3L - 40 C 动态随机存取存储器 , TSOP-54 动态随机存取存储器 , AS4C256M16D4-75 动态随机存取存储器
2020-7-9
IS46TR16128CL-125KBLA1
4 Gbit FBGA-96 SDRAM - DDR3 动态随机存取存储器 , 2 Gbit SDRAM - DDR2 16 bit 动态随机存取存储器 , FBGA-84 16 bit 动态随机存取存储器 , 4 Gbit SDRAM - DDR3L - 40 C 动态随机存取存储器 , TSOP-54 动态随机存取存储器 , AS4C256M16D4-75 动态随机存取存储器
2020-7-9
IS61LV256AH-15JI，IS61LV256AH-10T，IS61LV256AH-10TI，IS61LV256AH-12J，IS61LV2568L-12TI，IS61LV2568L-10TLI，IS61LV2568L-10K，IS61LV2568-12T，IS61LV2568-12K，IS61LV2568-15T
IS61LV256AH-15JI，IS61LV256AH-10T，IS61LV256AH-10TI，IS61LV256AH-12J，IS61LV2568L-12TI，IS61LV2568L-10TLI，IS61LV2568L-10K，IS61LV2568-12T，IS61LV2568-12K，IS61LV2568-15T
2020-1-1

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IS61C3216价格

IS61C3216产品属性

IS61C3216供应商更多...

IS61C3216芯片相关品牌

IS61C3216规格书下载地址

IS61C3216参数引脚图相关

IS61C3216数据表相关新闻

IS61C1024AL-12KLI

IS61C5128AS-25TLI

IS61LV25616AL-10T现货热卖！！！！

IS46TR16256AL-125KBLA2

IS46TR16128CL-125KBLA1

IS61LV256AH-15JI，IS61LV256AH-10T，IS61LV256AH-10TI，IS61LV256AH-12J，IS61LV2568L-12TI，IS61LV2568L-10TLI，IS61LV2568L-10K，IS61LV2568-12T，IS61LV2568-12K，IS61LV2568-15T

DdatasheetPDF页码索引