位置：首页 > IC中文资料第6797页 > IS61C3216
IS61C3216价格
参考价格：￥12.3700
型号：IS61C3216AL-12TLI 品牌：ISSI 备注：这里有IS61C3216多少钱，2026年最近7天走势，今日出价，今日竞价，IS61C3216批发/采购报价，IS61C3216行情走势销售排行榜，IS61C3216报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IS61C3216 | 32K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS61C3216 is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumption. | ICSI |   | |
IS61C3216 | ASYNCHRONOUS STATIC RAM, High Speed A.SRAM | ISSI 矽成半导体 | | |
32K x 16 HIGH-SPEED CMOS STATIC RAM 32K x 16 HIGH-SPEED CMOS STATIC RAM | ISSI 矽成半导体 | | ||
32K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS61C3216 is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumption. | ICSI | | ||
32K x 16 HIGH-SPEED CMOS STATIC RAM 32K x 16 HIGH-SPEED CMOS STATIC RAM | ISSI 矽成半导体 | | ||
32K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS61C3216 is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumption. | ICSI | | ||
32K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS61C3216 is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumption. | ICSI | | ||
32K x 16 HIGH-SPEED CMOS STATIC RAM 32K x 16 HIGH-SPEED CMOS STATIC RAM | ISSI 矽成半导体 | | ||
32K x 16 HIGH-SPEED CMOS STATIC RAM 32K x 16 HIGH-SPEED CMOS STATIC RAM | ISSI 矽成半导体 | | ||
32K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS61C3216 is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumption. | ICSI | | ||
32K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS61C3216 is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumption. | ICSI | | ||
32K x 16 HIGH-SPEED CMOS STATIC RAM 32K x 16 HIGH-SPEED CMOS STATIC RAM | ISSI 矽成半导体 | | ||
32K x 16 HIGH-SPEED CMOS STATIC RAM 32K x 16 HIGH-SPEED CMOS STATIC RAM | ISSI 矽成半导体 | | ||
32K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS61C3216 is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumption. | ICSI | | ||
32K x 16 HIGH-SPEED CMOS STATIC RAM 32K x 16 HIGH-SPEED CMOS STATIC RAM | ISSI 矽成半导体 | | ||
32K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS61C3216 is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumption. | ICSI | | ||
32K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS61C3216 is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumption. | ICSI | | ||
32K x 16 HIGH-SPEED CMOS STATIC RAM 32K x 16 HIGH-SPEED CMOS STATIC RAM | ISSI 矽成半导体 | | ||
32K x 16 HIGH-SPEED CMOS STATIC RAM 32K x 16 HIGH-SPEED CMOS STATIC RAM | ISSI 矽成半导体 | | ||
32K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS61C3216 is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumption. | ICSI | | ||
32K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS61C3216 is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumption. | ICSI | | ||
32K x 16 HIGH-SPEED CMOS STATIC RAM 32K x 16 HIGH-SPEED CMOS STATIC RAM | ISSI 矽成半导体 | | ||
32K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS61C3216 is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumption. | ICSI | | ||
32K x 16 HIGH-SPEED CMOS STATIC RAM 32K x 16 HIGH-SPEED CMOS STATIC RAM | ISSI 矽成半导体 | | ||
32K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS61C3216 is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumption. | ICSI | | ||
32K x 16 HIGH-SPEED CMOS STATIC RAM 32K x 16 HIGH-SPEED CMOS STATIC RAM | ISSI 矽成半导体 | | ||
32K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS61C3216 is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumption. | ICSI | | ||
32K x 16 HIGH-SPEED CMOS STATIC RAM 32K x 16 HIGH-SPEED CMOS STATIC RAM | ISSI 矽成半导体 | | ||
32K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS61C3216 is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumption. | ICSI | | ||
32K x 16 HIGH-SPEED CMOS STATIC RAM 32K x 16 HIGH-SPEED CMOS STATIC RAM | ISSI 矽成半导体 | | ||
32K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C3216AL is high-speed, 512Kb static RAMs organized as 32,768 words by 16 bits. They are fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with low po | ISSI 矽成半导体 | | ||
32K x 16 HIGH-SPEED CMOS STATIC RAM FEATURES • High-speed access time: 12 ns • Low Active Power: 175 mW (typical) • Low Standby Power: 1 mW (typical) CMOS standby • TTL compatible interface levels • Single 5V ± 10% power supply • Fully static operation: no clock or refresh required • Available in 44-pin TSOP (Type II) p | ISSI 矽成半导体 | | ||
32K x 16 HIGH-SPEED CMOS STATIC RAM FEATURES • High-speed access time: 12 ns • Low Active Power: 175 mW (typical) • Low Standby Power: 1 mW (typical) CMOS standby • TTL compatible interface levels • Single 5V ± 10% power supply • Fully static operation: no clock or refresh required • Available in 44-pin TSOP (Type II) p | ISSI 矽成半导体 | | ||
32K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C3216AL is high-speed, 512Kb static RAMs organized as 32,768 words by 16 bits. They are fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with low po | ISSI 矽成半导体 | | ||
32K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C3216AL is high-speed, 512Kb static RAMs organized as 32,768 words by 16 bits. They are fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with low po | ISSI 矽成半导体 | | ||
32K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C3216AL is high-speed, 512Kb static RAMs organized as 32,768 words by 16 bits. They are fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with low po | ISSI 矽成半导体 | | ||
32K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C3216AL is high-speed, 512Kb static RAMs organized as 32,768 words by 16 bits. They are fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with low po | ISSI 矽成半导体 | | ||
32K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C3216AL is high-speed, 512Kb static RAMs organized as 32,768 words by 16 bits. They are fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with low po | ISSI 矽成半导体 | | ||
32K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C3216AL is high-speed, 512Kb static RAMs organized as 32,768 words by 16 bits. They are fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with low po | ISSI 矽成半导体 | | ||
32K x 16 HIGH-SPEED CMOS STATIC RAM FEATURES • High-speed access time: 12 ns • Low Active Power: 175 mW (typical) • Low Standby Power: 1 mW (typical) CMOS standby • TTL compatible interface levels • Single 5V ± 10% power supply • Fully static operation: no clock or refresh required • Available in 44-pin TSOP (Type II) p | ISSI 矽成半导体 | | ||
5V High-Speed Asynchronous SRAM | ISSI 矽成半导体 | | ||
封装/外壳：44-BSOJ（0.400"，10.16mm 宽） 包装：卷带（TR） 描述：IC SRAM 512KBIT PARALLEL 44SOJ 集成电路（IC） 存储器 | ETC 知名厂家 | ETC | | |
封装/外壳：44-TSOP（0.400"，10.16mm 宽） 包装：卷带（TR） 描述：IC SRAM 512KBIT PAR 44TSOP II 集成电路（IC） 存储器 | ETC 知名厂家 | ETC | | |
32K x 16 HIGH-SPEED CMOS STATIC RAM 32K x 16 HIGH-SPEED CMOS STATIC RAM | ISSI 矽成半导体 | |
IS61C3216产品属性
- 类型
描述
- 型号
IS61C3216
- 制造商
ICSI
- 制造商全称
Integrated Circuit Solution Inc
- 功能描述
32K x 16 HIGH-SPEED CMOS STATIC RAM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MICROCHIP |
2004+ |
SOJ |
4700 |
2004+ |
|||
ISSI |
22+ |
S0J |
8000 |
原装正品支持实单 |
|||
I-SSI |
25+ |
SOJ |
3000 |
全新原装、诚信经营、公司现货销售 |
|||
ISSI |
25+ |
1 |
公司优势库存 热卖中!! |
||||
ISSI |
00+ |
SOP |
16 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ISSI |
22+ |
TQFP |
5000 |
全新原装现货!自家库存! |
|||
ISSI |
26+ |
S0J |
86910 |
全新原装进口现货价格优惠 本公司承诺原装正品假一赔 |
|||
ISSI |
23+ |
SOJ |
7000 |
||||
ISSI |
2447 |
SMD |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
ISSI |
23+ |
TSOP |
8500 |
IS61C3216规格书下载地址
IS61C3216参数引脚图相关
- l101
- l100
- ku波段
- kt250
- kse13005
- ks20
- km710
- ka5q1265rf
- k9f1208
- k310
- k2698
- k233
- k2055
- k2010
- jumper
- jtag接口
- jk触发器
- j111
- j108
- isd1420
- IS70-48
- IS70-24
- IS70-15
- IS70-12
- IS7000
- IS-70
- IS662X
- IS662
- IS661X
- IS661
- IS660X
- IS660
- IS655A
- IS654A
- IS627
- IS623
- IS622
- IS621
- IS620
- IS61LPS102418B-200TQLI
- IS61LPS102418A-200TQLI
- IS61LP6432A-133TQLI
- IS61LF6436A-8.5TQLI
- IS61LF51236A-7.5TQLI
- IS61LF51218A-7.5TQLI
- IS61LF25636A-7.5TQLI
- IS61LF12836A-7.5TQLI
- IS61LF102418A-7.5TQLI
- IS61C67
- IS61C64AL-10JLI
- IS61C6416AL-12TLI-TR
- IS61C6416AL-12TLI
- IS61C6416AL-12KLI
- IS61C5128AS-25TLI-TR
- IS61C5128AS-25TLI
- IS61C5128AS-25QLI
- IS61C5128AL-10TLI
- IS61C5128AL-10KLI-TR
- IS61C5128AL-10KLI
- IS61C3216AL-12TLI
- IS61C256AL-12TLI
- IS61C256AL-12JLI-TR
- IS61C256AL-12JLI
- IS61C256AL-12J>
- IS61C25616AS-25TLI
- IS61C25616AL-10TLI
- IS61C25616AL-10KLI
- IS61C1024AL-12TLI
- IS61C1024AL-12KLI
- IS61C1024AL-12JLI-TR
- IS61C1024AL-12JLI
- IS611X
- IS611
- IS610X
- IS610
- IS609
- IS608X
- IS608
- IS607X
- IS607
- IS6051
- IS604X
- IS604
- IS6030
- IS602-Y-2
- IS601-YSY-6
- IS601-Y-7
- IS601-Y-1
- IS601-XXXPFR-04
- IS601-XP-12
- IS601-XP-08
- IS601-6
- IS6015X
- IS6015
- IS6010X
- IS6010
- IS600XP-03
- IS6005X
- IS6005
- IS6003
IS61C3216数据表相关新闻
IS61C1024AL-12KLI
进口代理
2022-9-21IS61C5128AS-25TLI
进口代理
2022-8-10IS61LV25616AL-10T现货热卖！！！！
IS61LV25616AL-10T现货热卖！！！！
2021-7-7IS46TR16256AL-125KBLA2
4 Gbit FBGA-96 SDRAM - DDR3 动态随机存取存储器 , 2 Gbit SDRAM - DDR2 16 bit 动态随机存取存储器 , FBGA-84 16 bit 动态随机存取存储器 , 4 Gbit SDRAM - DDR3L - 40 C 动态随机存取存储器 , TSOP-54 动态随机存取存储器 , AS4C256M16D4-75 动态随机存取存储器
2020-7-9IS46TR16128CL-125KBLA1
4 Gbit FBGA-96 SDRAM - DDR3 动态随机存取存储器 , 2 Gbit SDRAM - DDR2 16 bit 动态随机存取存储器 , FBGA-84 16 bit 动态随机存取存储器 , 4 Gbit SDRAM - DDR3L - 40 C 动态随机存取存储器 , TSOP-54 动态随机存取存储器 , AS4C256M16D4-75 动态随机存取存储器
2020-7-9IS61LV256AH-15JI，IS61LV256AH-10T，IS61LV256AH-10TI，IS61LV256AH-12J，IS61LV2568L-12TI，IS61LV2568L-10TLI，IS61LV2568L-10K，IS61LV2568-12T，IS61LV2568-12K，IS61LV2568-15T
IS61LV256AH-15JI，IS61LV256AH-10T，IS61LV256AH-10TI，IS61LV256AH-12J，IS61LV2568L-12TI，IS61LV2568L-10TLI，IS61LV2568L-10K，IS61LV2568-12T，IS61LV2568-12K，IS61LV2568-15T
2020-1-1
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
- P104
- P105
- P106
- P107
- P108
