32K x 16 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ISSI IS61C3216AL is high-speed, 512Kb static RAMs organized as 32,768 words by 16 bits. They are fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with low po

32K x 16 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ISSI IS61C3216AL is high-speed, 512Kb static RAMs organized as 32,768 words by 16 bits. They are fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with low po

32K x 16 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ISSI IS61C3216AL is high-speed, 512Kb static RAMs organized as 32,768 words by 16 bits. They are fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with low po

封装/外壳：44-BSOJ（0.400"，10.16mm 宽） 包装：托盘 描述：IC SRAM 512KBIT PARALLEL 44SOJ 集成电路（IC） 存储器

封装/外壳：44-BSOJ（0.400"，10.16mm 宽） 包装：卷带（TR） 描述：IC SRAM 512KBIT PARALLEL 44SOJ 集成电路（IC） 存储器

32K x 16 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ISSI IS61C3216AL is high-speed, 512Kb static RAMs organized as 32,768 words by 16 bits. They are fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with low po

32K x 16 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ISSI IS61C3216AL is high-speed, 512Kb static RAMs organized as 32,768 words by 16 bits. They are fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with low po