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IS61价格

参考价格：￥10.8951

型号：IS61C1024AL-12JLI 品牌：ISSI 备注：这里有IS61多少钱，2025年最近7天走势，今日出价，今日竞价，IS61批发/采购报价，IS61行情走势销售排行榜，IS61报价。

型号	功能描述	生产厂家企业	LOGO
IS61C1024AL-12HLI	128K x 8 HIGH-SPEED CMOS STATIC RAM FEATURES • High-speed access time: 12, 15 ns • Low active power: 160 mW (typical) • Low standby power: 1000 μW (typical) CMOS standby • Output Enable (OE) and two Chip Enable (CE1 and CE2) inputs for ease in applications • Fully static operation: no clock or refresh required • TTL compati	ISSI 矽成半导体	ISSI
IS61C1024AL-12TLI	128K x 8 HIGH-SPEED CMOS STATIC RAM FEATURES • High-speed access time: 12, 15 ns • Low active power: 160 mW (typical) • Low standby power: 1000 μW (typical) CMOS standby • Output Enable (OE) and two Chip Enable (CE1 and CE2) inputs for ease in applications • Fully static operation: no clock or refresh required • TTL compati	ISSI 矽成半导体	ISSI
IS61C12816	128K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with	ISSI 矽成半导体	ISSI
IS61C12816-12K	128K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with	ISSI 矽成半导体	ISSI
IS61C12816-12KI	128K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with	ISSI 矽成半导体	ISSI
IS61C12816-12T	128K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with	ISSI 矽成半导体	ISSI
IS61C12816-12TI	128K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with	ISSI 矽成半导体	ISSI
IS61C12816-15K	128K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with	ISSI 矽成半导体	ISSI
IS61C12816-15KI	128K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with	ISSI 矽成半导体	ISSI
IS61C12816-15T	128K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with	ISSI 矽成半导体	ISSI
IS61C12816-15TI	128K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with	ISSI 矽成半导体	ISSI
IS61C12816-20K	128K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with	ISSI 矽成半导体	ISSI
IS61C12816-20KI	128K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with	ISSI 矽成半导体	ISSI
IS61C12816-20T	128K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with	ISSI 矽成半导体	ISSI
IS61C12816-20TI	128K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with	ISSI 矽成半导体	ISSI
IS61C25616	256K X 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 5V SUPPLY 256K X 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 5V SUPPLY	ISSI 矽成半导体	ISSI
IS61C25616AL	256K x 16 HIGH-SPEED CMOS STATIC RAM FEATURES HIGH SPEED: (IS61/64C25616AL) • High-speed access time: 10ns, 12 ns • Low Active Power: 150 mW (typical) • Low Standby Power: 10 mW (typical) CMOS standby LOW POWER: (IS61/64C25616AS) • High-speed access time: 25 ns • Low Active Power: 75 mW (typical) • Low Standby Power: 1 mW (t	ISSI 矽成半导体	ISSI
IS61C25616AL_V01	256K x 16 HIGH-SPEED CMOS STATIC RAM FEATURES HIGH SPEED: (IS61/64C25616AL) • High-speed access time: 10ns, 12 ns • Low Active Power: 150 mW (typical) • Low Standby Power: 10 mW (typical) CMOS standby LOW POWER: (IS61/64C25616AS) • High-speed access time: 25 ns • Low Active Power: 75 mW (typical) • Low Standby Power: 1 mW (t	ISSI 矽成半导体	ISSI
IS61C25616AL-10KLI	256K x 16 HIGH-SPEED CMOS STATIC RAM FEATURES HIGH SPEED: (IS61/64C25616AL) • High-speed access time: 10ns, 12 ns • Low Active Power: 150 mW (typical) • Low Standby Power: 10 mW (typical) CMOS standby LOW POWER: (IS61/64C25616AS) • High-speed access time: 25 ns • Low Active Power: 75 mW (typical) • Low Standby Power: 1 mW (t	ISSI 矽成半导体	ISSI
IS61C25616AL-10TL	256K x 16 HIGH-SPEED CMOS STATIC RAM FEATURES HIGH SPEED: (IS61/64C25616AL) • High-speed access time: 10ns, 12 ns • Low Active Power: 150 mW (typical) • Low Standby Power: 10 mW (typical) CMOS standby LOW POWER: (IS61/64C25616AS) • High-speed access time: 25 ns • Low Active Power: 75 mW (typical) • Low Standby Power: 1 mW (t	ISSI 矽成半导体	ISSI
IS61C25616AL-10TLI	256K x 16 HIGH-SPEED CMOS STATIC RAM FEATURES HIGH SPEED: (IS61/64C25616AL) • High-speed access time: 10ns, 12 ns • Low Active Power: 150 mW (typical) • Low Standby Power: 10 mW (typical) CMOS standby LOW POWER: (IS61/64C25616AS) • High-speed access time: 25 ns • Low Active Power: 75 mW (typical) • Low Standby Power: 1 mW (t	ISSI 矽成半导体	ISSI
IS61C25616AS	256K x 16 HIGH-SPEED CMOS STATIC RAM FEATURES HIGH SPEED: (IS61/64C25616AL) • High-speed access time: 10ns, 12 ns • Low Active Power: 150 mW (typical) • Low Standby Power: 10 mW (typical) CMOS standby LOW POWER: (IS61/64C25616AS) • High-speed access time: 25 ns • Low Active Power: 75 mW (typical) • Low Standby Power: 1 mW (t	ISSI 矽成半导体	ISSI
IS61C25616AS-25KLI	256K x 16 HIGH-SPEED CMOS STATIC RAM FEATURES HIGH SPEED: (IS61/64C25616AL) • High-speed access time: 10ns, 12 ns • Low Active Power: 150 mW (typical) • Low Standby Power: 10 mW (typical) CMOS standby LOW POWER: (IS61/64C25616AS) • High-speed access time: 25 ns • Low Active Power: 75 mW (typical) • Low Standby Power: 1 mW (t	ISSI 矽成半导体	ISSI
IS61C25616AS-25TLI	256K x 16 HIGH-SPEED CMOS STATIC RAM FEATURES HIGH SPEED: (IS61/64C25616AL) • High-speed access time: 10ns, 12 ns • Low Active Power: 150 mW (typical) • Low Standby Power: 10 mW (typical) CMOS standby LOW POWER: (IS61/64C25616AS) • High-speed access time: 25 ns • Low Active Power: 75 mW (typical) • Low Standby Power: 1 mW (t	ISSI 矽成半导体	ISSI
IS61C256AL	32K x 8 HIGH-SPEED CMOS STATIC RAM FEATURES • High-speed access time: 10, 12 ns • CMOS Low Power Operation — 1 mW (typical) CMOS standby — 125 mW (typical) operating • Fully static operation: no clock or refresh required • TTL compatible inputs and outputs • Single 5V power supply • Lead-free available	ISSI 矽成半导体	ISSI
IS61C256AL-10TL	32K x 8 HIGH-SPEED CMOS STATIC RAM FEATURES • High-speed access time: 10, 12 ns • CMOS Low Power Operation — 1 mW (typical) CMOS standby — 125 mW (typical) operating • Fully static operation: no clock or refresh required • TTL compatible inputs and outputs • Single 5V power supply • Lead-free available	ISSI 矽成半导体	ISSI
IS61C256AL-12TL	32K x 8 HIGH-SPEED CMOS STATIC RAM FEATURES • High-speed access time: 10, 12 ns • CMOS Low Power Operation — 1 mW (typical) CMOS standby — 125 mW (typical) operating • Fully static operation: no clock or refresh required • TTL compatible inputs and outputs • Single 5V power supply • Lead-free available	ISSI 矽成半导体	ISSI
IS61C256AL-12TLI	32K x 8 HIGH-SPEED CMOS STATIC RAM FEATURES • High-speed access time: 10, 12 ns • CMOS Low Power Operation — 1 mW (typical) CMOS standby — 125 mW (typical) operating • Fully static operation: no clock or refresh required • TTL compatible inputs and outputs • Single 5V power supply • Lead-free available	ISSI 矽成半导体	ISSI
IS61C3216	32K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS61C3216 is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumption.	ICSI	ICSI
IS61C3216-10K	32K x 16 HIGH-SPEED CMOS STATIC RAM 32K x 16 HIGH-SPEED CMOS STATIC RAM	ISSI 矽成半导体	ISSI
IS61C3216-10K	32K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS61C3216 is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumption.	ICSI	ICSI
IS61C3216-10T	32K x 16 HIGH-SPEED CMOS STATIC RAM 32K x 16 HIGH-SPEED CMOS STATIC RAM	ISSI 矽成半导体	ISSI
IS61C3216-10T	32K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS61C3216 is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumption.	ICSI	ICSI
IS61C3216-12K	32K x 16 HIGH-SPEED CMOS STATIC RAM 32K x 16 HIGH-SPEED CMOS STATIC RAM	ISSI 矽成半导体	ISSI
IS61C3216-12K	32K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS61C3216 is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumption.	ICSI	ICSI
IS61C3216-12KI	32K x 16 HIGH-SPEED CMOS STATIC RAM 32K x 16 HIGH-SPEED CMOS STATIC RAM	ISSI 矽成半导体	ISSI
IS61C3216-12KI	32K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS61C3216 is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumption.	ICSI	ICSI
IS61C3216-12T	32K x 16 HIGH-SPEED CMOS STATIC RAM 32K x 16 HIGH-SPEED CMOS STATIC RAM	ISSI 矽成半导体	ISSI
IS61C3216-12T	32K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS61C3216 is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumption.	ICSI	ICSI
IS61C3216-12TI	32K x 16 HIGH-SPEED CMOS STATIC RAM 32K x 16 HIGH-SPEED CMOS STATIC RAM	ISSI 矽成半导体	ISSI
IS61C3216-12TI	32K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS61C3216 is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumption.	ICSI	ICSI
IS61C3216-15K	32K x 16 HIGH-SPEED CMOS STATIC RAM 32K x 16 HIGH-SPEED CMOS STATIC RAM	ISSI 矽成半导体	ISSI
IS61C3216-15K	32K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS61C3216 is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumption.	ICSI	ICSI
IS61C3216-15KI	32K x 16 HIGH-SPEED CMOS STATIC RAM 32K x 16 HIGH-SPEED CMOS STATIC RAM	ISSI 矽成半导体	ISSI
IS61C3216-15KI	32K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS61C3216 is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumption.	ICSI	ICSI
IS61C3216-15T	32K x 16 HIGH-SPEED CMOS STATIC RAM 32K x 16 HIGH-SPEED CMOS STATIC RAM	ISSI 矽成半导体	ISSI
IS61C3216-15T	32K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS61C3216 is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumption.	ICSI	ICSI
IS61C3216-15TI	32K x 16 HIGH-SPEED CMOS STATIC RAM 32K x 16 HIGH-SPEED CMOS STATIC RAM	ISSI 矽成半导体	ISSI
IS61C3216-15TI	32K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS61C3216 is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumption.	ICSI	ICSI
IS61C3216-20K	32K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS61C3216 is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumption.	ICSI	ICSI
IS61C3216-20K	32K x 16 HIGH-SPEED CMOS STATIC RAM 32K x 16 HIGH-SPEED CMOS STATIC RAM	ISSI 矽成半导体	ISSI
IS61C3216-20KI	32K x 16 HIGH-SPEED CMOS STATIC RAM 32K x 16 HIGH-SPEED CMOS STATIC RAM	ISSI 矽成半导体	ISSI
IS61C3216-20KI	32K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS61C3216 is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumption.	ICSI	ICSI
IS61C3216-20T	32K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS61C3216 is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumption.	ICSI	ICSI
IS61C3216-20T	32K x 16 HIGH-SPEED CMOS STATIC RAM 32K x 16 HIGH-SPEED CMOS STATIC RAM	ISSI 矽成半导体	ISSI
IS61C3216-20TI	32K x 16 HIGH-SPEED CMOS STATIC RAM 32K x 16 HIGH-SPEED CMOS STATIC RAM	ISSI 矽成半导体	ISSI
IS61C3216-20TI	32K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS61C3216 is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumption.	ICSI	ICSI
IS61C3216AL	32K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C3216AL is high-speed, 512Kb static RAMs organized as 32,768 words by 16 bits. They are fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with low po	ISSI 矽成半导体	ISSI
IS61C3216AL	32K x 16 HIGH-SPEED CMOS STATIC RAM FEATURES • High-speed access time: 12 ns • Low Active Power: 175 mW (typical) • Low Standby Power: 1 mW (typical) CMOS standby • TTL compatible interface levels • Single 5V ± 10% power supply • Fully static operation: no clock or refresh required • Available in 44-pin TSOP (Type II) p	ISSI 矽成半导体	ISSI
IS61C3216AL_V01	32K x 16 HIGH-SPEED CMOS STATIC RAM FEATURES • High-speed access time: 12 ns • Low Active Power: 175 mW (typical) • Low Standby Power: 1 mW (typical) CMOS standby • TTL compatible interface levels • Single 5V ± 10% power supply • Fully static operation: no clock or refresh required • Available in 44-pin TSOP (Type II) p	ISSI 矽成半导体	ISSI

IS61产品属性

类型
描述
型号
IS61
制造商
IDEC Corporation
功能描述
Sensor Inductive NPN NO

IS61供应商更多...

更新时间：2025-11-26 18:15:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
千层芯半导体(深圳)有限公司	IS61C1024AL-12HLI	ISSI	24+	STSOP(32)	12000	专营ISSI进口原装正品假一赔十可開17增值稅票	询价
深圳市毅创腾电子科技有限公司	IS61C1024AL-12HLI	ISSI	23+	32-STSOP-I	9550	专业分销产品!原装正品!价格优势!	询价
深圳市赛美科科技有限公司	IS61C1024AL-12HLI	ISSI		TSOP	68500	一级代理原装正品假一罚十价格优势长期供货	询价
深圳市华来深电子有限公司	IS61C1024AL-12HLI	ISSI	23+	TSOP	8560	受权代理!全新原装现货特价热卖!	询价
深圳市宏世佳电子科技有限公司	IS61C1024AL-12HLI	ISSI	2025+	TSOP	3795	全新原装、公司现货热卖	询价
谛辉(北京/上海/青岛 )电子科技有限公司	IS61C1024AL-12J	ISSI	25+	QFN	18000	原厂直接发货进口原装	询价
深圳市威雅利发展有限公司	IS61C1024AL-12HLI	ISSI	21+	STSOP32	5800	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市冠亿通科技有限公司	IS61C1024AL-12HLI	ISSI,	25+		25000	原厂原包深圳现货主打品牌假一赔百可开票!	询价
深圳市祥瑞智科技有限公司	IS61C1024AL-12J	ISSI	25+		5916	原厂原装,价格优势	询价
深圳市河锋鑫科技有限公司	IS61C1024AL12HLITR	ISSI Integrated Silicon Soluti	22+	32sTSOP I	9000	原厂渠道,现货配单	询价

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IS61C1024AL-12KLI
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2022-9-21
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IS46LR32160B-6BLA1
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4 Gbit FBGA-96 SDRAM - DDR3 动态随机存取存储器 , 2 Gbit SDRAM - DDR2 16 bit 动态随机存取存储器 , FBGA-84 16 bit 动态随机存取存储器 , 4 Gbit SDRAM - DDR3L - 40 C 动态随机存取存储器 , TSOP-54 动态随机存取存储器 , AS4C256M16D4-75 动态随机存取存储器
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IS46TR16128CL-125KBLA1
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2020-7-9

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IS61价格

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IS61芯片相关品牌

IS61规格书下载地址

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IS61数据表相关新闻

IS61C1024AL-12KLI

IS61C5128AS-25TLI

IS61LV25616AL-10T现货热卖！！！！

IS46LR32160B-6BLA1

IS46TR16256AL-125KBLA2

IS46TR16128CL-125KBLA1

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