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位置：首页 > IC中文资料 > IS61

IS61价格

参考价格：￥10.8951

型号：IS61C1024AL-12JLI 品牌：ISSI 备注：这里有IS61多少钱，2026年最近7天走势，今日出价，今日竞价，IS61批发/采购报价，IS61行情走势销售排行榜，IS61报价。

型号	功能描述	生产厂家企业	LOGO
IS61C1024AL	128K x 8 HIGH-SPEED CMOS STATIC RAM FEATURES • High-speed access time: 12, 15 ns • Low active power: 160 mW (typical) • Low standby power: 1000 μW (typical) CMOS standby • Output Enable (OE) and two Chip Enable (CE1 and CE2) inputs for ease in applications • Fully static operation: no clock or refresh required • TTL compati	ISSI 矽成半导体	ISSI
IS61C1024AL_V01	128K x 8 HIGH-SPEED CMOS STATIC RAM FEATURES • High-speed access time: 12, 15 ns • Low active power: 160 mW (typical) • Low standby power: 1000 μW (typical) CMOS standby • Output Enable (OE) and two Chip Enable (CE1 and CE2) inputs for ease in applications • Fully static operation: no clock or refresh required • TTL compati	ISSI 矽成半导体	ISSI
IS61C1024AL-12HLI	128K x 8 HIGH-SPEED CMOS STATIC RAM FEATURES • High-speed access time: 12, 15 ns • Low active power: 160 mW (typical) • Low standby power: 1000 μW (typical) CMOS standby • Output Enable (OE) and two Chip Enable (CE1 and CE2) inputs for ease in applications • Fully static operation: no clock or refresh required • TTL compati	ISSI 矽成半导体	ISSI
IS61C1024AL-12TLI	128K x 8 HIGH-SPEED CMOS STATIC RAM FEATURES • High-speed access time: 12, 15 ns • Low active power: 160 mW (typical) • Low standby power: 1000 μW (typical) CMOS standby • Output Enable (OE) and two Chip Enable (CE1 and CE2) inputs for ease in applications • Fully static operation: no clock or refresh required • TTL compati	ISSI 矽成半导体	ISSI
IS61C12816	128K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with	ISSI 矽成半导体	ISSI
IS61C12816-12K	128K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with	ISSI 矽成半导体	ISSI
IS61C12816-12KI	128K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with	ISSI 矽成半导体	ISSI
IS61C12816-12T	128K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with	ISSI 矽成半导体	ISSI
IS61C12816-12TI	128K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with	ISSI 矽成半导体	ISSI
IS61C12816-15K	128K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with	ISSI 矽成半导体	ISSI
IS61C12816-15KI	128K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with	ISSI 矽成半导体	ISSI
IS61C12816-15T	128K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with	ISSI 矽成半导体	ISSI
IS61C12816-15TI	128K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with	ISSI 矽成半导体	ISSI
IS61C12816-20K	128K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with	ISSI 矽成半导体	ISSI
IS61C12816-20KI	128K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with	ISSI 矽成半导体	ISSI
IS61C12816-20T	128K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with	ISSI 矽成半导体	ISSI
IS61C12816-20TI	128K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with	ISSI 矽成半导体	ISSI
IS61C25616	256K X 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 5V SUPPLY 256K X 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 5V SUPPLY	ISSI 矽成半导体	ISSI
IS61C25616AL	256K x 16 HIGH-SPEED CMOS STATIC RAM FEATURES HIGH SPEED: (IS61/64C25616AL) • High-speed access time: 10ns, 12 ns • Low Active Power: 150 mW (typical) • Low Standby Power: 10 mW (typical) CMOS standby LOW POWER: (IS61/64C25616AS) • High-speed access time: 25 ns • Low Active Power: 75 mW (typical) • Low Standby Power: 1 mW (t	ISSI 矽成半导体	ISSI
IS61C25616AL_V01	256K x 16 HIGH-SPEED CMOS STATIC RAM FEATURES HIGH SPEED: (IS61/64C25616AL) • High-speed access time: 10ns, 12 ns • Low Active Power: 150 mW (typical) • Low Standby Power: 10 mW (typical) CMOS standby LOW POWER: (IS61/64C25616AS) • High-speed access time: 25 ns • Low Active Power: 75 mW (typical) • Low Standby Power: 1 mW (t	ISSI 矽成半导体	ISSI
IS61C25616AL-10KLI	256K x 16 HIGH-SPEED CMOS STATIC RAM FEATURES HIGH SPEED: (IS61/64C25616AL) • High-speed access time: 10ns, 12 ns • Low Active Power: 150 mW (typical) • Low Standby Power: 10 mW (typical) CMOS standby LOW POWER: (IS61/64C25616AS) • High-speed access time: 25 ns • Low Active Power: 75 mW (typical) • Low Standby Power: 1 mW (t	ISSI 矽成半导体	ISSI
IS61C25616AL-10TL	256K x 16 HIGH-SPEED CMOS STATIC RAM FEATURES HIGH SPEED: (IS61/64C25616AL) • High-speed access time: 10ns, 12 ns • Low Active Power: 150 mW (typical) • Low Standby Power: 10 mW (typical) CMOS standby LOW POWER: (IS61/64C25616AS) • High-speed access time: 25 ns • Low Active Power: 75 mW (typical) • Low Standby Power: 1 mW (t	ISSI 矽成半导体	ISSI
IS61C25616AL-10TLI	256K x 16 HIGH-SPEED CMOS STATIC RAM FEATURES HIGH SPEED: (IS61/64C25616AL) • High-speed access time: 10ns, 12 ns • Low Active Power: 150 mW (typical) • Low Standby Power: 10 mW (typical) CMOS standby LOW POWER: (IS61/64C25616AS) • High-speed access time: 25 ns • Low Active Power: 75 mW (typical) • Low Standby Power: 1 mW (t	ISSI 矽成半导体	ISSI
IS61C25616AS	256K x 16 HIGH-SPEED CMOS STATIC RAM FEATURES HIGH SPEED: (IS61/64C25616AL) • High-speed access time: 10ns, 12 ns • Low Active Power: 150 mW (typical) • Low Standby Power: 10 mW (typical) CMOS standby LOW POWER: (IS61/64C25616AS) • High-speed access time: 25 ns • Low Active Power: 75 mW (typical) • Low Standby Power: 1 mW (t	ISSI 矽成半导体	ISSI
IS61C25616AS-25KLI	256K x 16 HIGH-SPEED CMOS STATIC RAM FEATURES HIGH SPEED: (IS61/64C25616AL) • High-speed access time: 10ns, 12 ns • Low Active Power: 150 mW (typical) • Low Standby Power: 10 mW (typical) CMOS standby LOW POWER: (IS61/64C25616AS) • High-speed access time: 25 ns • Low Active Power: 75 mW (typical) • Low Standby Power: 1 mW (t	ISSI 矽成半导体	ISSI
IS61C25616AS-25TLI	256K x 16 HIGH-SPEED CMOS STATIC RAM FEATURES HIGH SPEED: (IS61/64C25616AL) • High-speed access time: 10ns, 12 ns • Low Active Power: 150 mW (typical) • Low Standby Power: 10 mW (typical) CMOS standby LOW POWER: (IS61/64C25616AS) • High-speed access time: 25 ns • Low Active Power: 75 mW (typical) • Low Standby Power: 1 mW (t	ISSI 矽成半导体	ISSI
IS61C256AL	32K x 8 HIGH-SPEED CMOS STATIC RAM FEATURES • High-speed access time: 10, 12 ns • CMOS Low Power Operation — 1 mW (typical) CMOS standby — 125 mW (typical) operating • Fully static operation: no clock or refresh required • TTL compatible inputs and outputs • Single 5V power supply • Lead-free available	ISSI 矽成半导体	ISSI
IS61C256AL_V01	32K x 8 HIGH-SPEED CMOS STATIC RAM FEATURES • High-speed access time: 10, 12 ns • CMOS Low Power Operation — 1 mW (typical) CMOS standby — 125 mW (typical) operating • Fully static operation: no clock or refresh required • TTL compatible inputs and outputs • Single 5V power supply • Lead-free available	ISSI 矽成半导体	ISSI
IS61C256AL-10TL	32K x 8 HIGH-SPEED CMOS STATIC RAM FEATURES • High-speed access time: 10, 12 ns • CMOS Low Power Operation — 1 mW (typical) CMOS standby — 125 mW (typical) operating • Fully static operation: no clock or refresh required • TTL compatible inputs and outputs • Single 5V power supply • Lead-free available	ISSI 矽成半导体	ISSI
IS61C256AL-12TL	32K x 8 HIGH-SPEED CMOS STATIC RAM FEATURES • High-speed access time: 10, 12 ns • CMOS Low Power Operation — 1 mW (typical) CMOS standby — 125 mW (typical) operating • Fully static operation: no clock or refresh required • TTL compatible inputs and outputs • Single 5V power supply • Lead-free available	ISSI 矽成半导体	ISSI
IS61C256AL-12TLI	32K x 8 HIGH-SPEED CMOS STATIC RAM FEATURES • High-speed access time: 10, 12 ns • CMOS Low Power Operation — 1 mW (typical) CMOS standby — 125 mW (typical) operating • Fully static operation: no clock or refresh required • TTL compatible inputs and outputs • Single 5V power supply • Lead-free available	ISSI 矽成半导体	ISSI
IS61C3216	32K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS61C3216 is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumption.	ICSI	ICSI
IS61C3216-10K	32K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS61C3216 is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumption.	ICSI	ICSI
IS61C3216-10K	32K x 16 HIGH-SPEED CMOS STATIC RAM 32K x 16 HIGH-SPEED CMOS STATIC RAM	ISSI 矽成半导体	ISSI
IS61C3216-10T	32K x 16 HIGH-SPEED CMOS STATIC RAM 32K x 16 HIGH-SPEED CMOS STATIC RAM	ISSI 矽成半导体	ISSI
IS61C3216-10T	32K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS61C3216 is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumption.	ICSI	ICSI
IS61C3216-12K	32K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS61C3216 is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumption.	ICSI	ICSI
IS61C3216-12K	32K x 16 HIGH-SPEED CMOS STATIC RAM 32K x 16 HIGH-SPEED CMOS STATIC RAM	ISSI 矽成半导体	ISSI
IS61C3216-12KI	32K x 16 HIGH-SPEED CMOS STATIC RAM 32K x 16 HIGH-SPEED CMOS STATIC RAM	ISSI 矽成半导体	ISSI
IS61C3216-12KI	32K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS61C3216 is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumption.	ICSI	ICSI
IS61C3216-12T	32K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS61C3216 is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumption.	ICSI	ICSI
IS61C3216-12T	32K x 16 HIGH-SPEED CMOS STATIC RAM 32K x 16 HIGH-SPEED CMOS STATIC RAM	ISSI 矽成半导体	ISSI
IS61C3216-12TI	32K x 16 HIGH-SPEED CMOS STATIC RAM 32K x 16 HIGH-SPEED CMOS STATIC RAM	ISSI 矽成半导体	ISSI
IS61C3216-12TI	32K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS61C3216 is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumption.	ICSI	ICSI
IS61C3216-15K	32K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS61C3216 is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumption.	ICSI	ICSI
IS61C3216-15K	32K x 16 HIGH-SPEED CMOS STATIC RAM 32K x 16 HIGH-SPEED CMOS STATIC RAM	ISSI 矽成半导体	ISSI
IS61C3216-15KI	32K x 16 HIGH-SPEED CMOS STATIC RAM 32K x 16 HIGH-SPEED CMOS STATIC RAM	ISSI 矽成半导体	ISSI
IS61C3216-15KI	32K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS61C3216 is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumption.	ICSI	ICSI
IS61C3216-15T	32K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS61C3216 is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumption.	ICSI	ICSI
IS61C3216-15T	32K x 16 HIGH-SPEED CMOS STATIC RAM 32K x 16 HIGH-SPEED CMOS STATIC RAM	ISSI 矽成半导体	ISSI
IS61C3216-15TI	32K x 16 HIGH-SPEED CMOS STATIC RAM 32K x 16 HIGH-SPEED CMOS STATIC RAM	ISSI 矽成半导体	ISSI
IS61C3216-15TI	32K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS61C3216 is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumption.	ICSI	ICSI
IS61C3216-20K	32K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS61C3216 is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumption.	ICSI	ICSI
IS61LF25636B	Synchronous SRAM ·4Mb, 9Mb, 18Mb, 36Mb, and 72Mb densities available\n·x18, x36, and x72 configurations available\n·Pipeline, Flow-Through, and No-Wait State (ZBT equivalent)\n·Commercial, Industrial, and Automotive Temperature support\n·ECC feature available for 4Mb product\n·250MHz speed for Pipeline\n·6.5ns acces	ISSI 矽成半导体	ISSI
IS61LPD51236B	Synchronous SRAM ·4Mb, 9Mb, 18Mb, 36Mb, and 72Mb densities available\n·x18, x36, and x72 configurations available\n·Pipeline, Flow-Through, and No-Wait State (ZBT equivalent)\n·Commercial, Industrial, and Automotive Temperature support\n·ECC feature available for 4Mb product\n·250MHz speed for Pipeline\n·6.5ns acces	ISSI 矽成半导体	ISSI
IS61/64WV20488BLL	2M x 8 HIGH-SPEED CMOS STATIC RAM 文件：365.22 Kbytes Page：19 Pages	ISSI 矽成半导体	ISSI
IS610	PHOTON COUPLED BILATERAL ANALOG FET 文件：79.36 Kbytes Page：3 Pages	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
IS610X	PHOTON COUPLED BILATERAL ANALOG FET 文件：79.36 Kbytes Page：3 Pages	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
IS611	PHOTON COUPLED BILATERAL ANALOG FET 文件：79.36 Kbytes Page：3 Pages	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
IS611X	PHOTON COUPLED BILATERAL ANALOG FET 文件：79.36 Kbytes Page：3 Pages	ETCList of Unclassifed Manufacturers 未分类制造商	ETC

IS61产品属性

类型
描述
Organization：
128Kx36
Product Type：
Flowthrough
VccQ：
2.5V/3.3V
Speed (MHz)：
133117
tKQ(ns)：
6.5
Package Pins：
BGA(119)
Temperature Grade：
C
Status：
Prod

IS61供应商更多...

更新时间：2026-5-24 9:16:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
芯有半导体（深圳）有限公司	IS61C3216-15T	INTEGRATEDSI	05+	原厂原装	4245	只做全新原装真实现货供应	询价
深圳市能元时代电子有限公司	IS61C3216-15T	ISSI	23+	DIP	55241	##公司主营品牌长期供应100%原装现货可含税提供技术	询价
深圳市坤融电子科技有限公司	IS61C3216-15T	ISSI	2025+	TSOP-44	5000	原装进口价格优请找坤融电子!	询价
深圳市福田区绿盛电子商行	IS61C3216-15TI	ISSI	2015+	SMD/DIP	19889	一级代理原装现货,特价热卖!	询价
深圳市豪迈兴电子有限公司	IS61C3216-15T	ISSI	24+	TSOP	5825	公司原厂原装现货假一罚十!特价出售!强势库存!	询价
深圳市宇创芯科技有限公司	IS61C3216-15T	ISSI	24+	TSSOP	9600	原装现货,优势供应,支持实单!	询价
深圳市胜彬电子有限公司	IS61C3216-15T	ISSI	22+	TSSOP	8000	原装正品支持实单	询价
深圳市英科美电子有限公司	IS61C3216-15T	ISSI	2223+	TSOP	26800	只做原装正品假一赔十为客户做到零风险	询价
深圳市宝芯创电子有限公司	IS61C3216-15T	ISSI	2026+	TSSOP	26596	全新原装现货,可出样品,可开增值税发票	询价
深圳市弘为电子有限公司	IS61C3216-15T	ISSI	24+	TSSOP	1068	原装现货假一罚十	询价

IS61芯片相关品牌

IS61规格书下载地址

IS61参数引脚图相关

IS61数据表相关新闻

IS61C1024AL-12KLI
进口代理
2022-9-21
IS61C5128AS-25TLI
进口代理
2022-8-10
IS61LV25616AL-10T现货热卖！！！！
IS61LV25616AL-10T现货热卖！！！！
2021-7-7
IS46LR32160B-6BLA1
IS46LR32160B-6BLA1
2021-6-2
IS46TR16256AL-125KBLA2
4 Gbit FBGA-96 SDRAM - DDR3 动态随机存取存储器 , 2 Gbit SDRAM - DDR2 16 bit 动态随机存取存储器 , FBGA-84 16 bit 动态随机存取存储器 , 4 Gbit SDRAM - DDR3L - 40 C 动态随机存取存储器 , TSOP-54 动态随机存取存储器 , AS4C256M16D4-75 动态随机存取存储器
2020-7-9
IS46TR16128CL-125KBLA1
4 Gbit FBGA-96 SDRAM - DDR3 动态随机存取存储器 , 2 Gbit SDRAM - DDR2 16 bit 动态随机存取存储器 , FBGA-84 16 bit 动态随机存取存储器 , 4 Gbit SDRAM - DDR3L - 40 C 动态随机存取存储器 , TSOP-54 动态随机存取存储器 , AS4C256M16D4-75 动态随机存取存储器
2020-7-9

DdatasheetPDF页码索引

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找IC，尽在114IC

IS61价格

IS61产品属性

IS61供应商更多...

IS61芯片相关品牌

IS61规格书下载地址

IS61参数引脚图相关

IS61数据表相关新闻

IS61C1024AL-12KLI

IS61C5128AS-25TLI

IS61LV25616AL-10T现货热卖！！！！

IS46LR32160B-6BLA1

IS46TR16256AL-125KBLA2

IS46TR16128CL-125KBLA1

DdatasheetPDF页码索引