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IS61价格
参考价格：￥10.8951
型号：IS61C1024AL-12JLI 品牌：ISSI 备注：这里有IS61多少钱，2026年最近7天走势，今日出价，今日竞价，IS61批发/采购报价，IS61行情走势销售排行榜，IS61报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
128K x 8 HIGH-SPEED CMOS STATIC RAM FEATURES • High-speed access time: 12, 15 ns • Low active power: 160 mW (typical) • Low standby power: 1000 μW (typical) CMOS standby • Output Enable (OE) and two Chip Enable (CE1 and CE2) inputs for ease in applications • Fully static operation: no clock or refresh required • TTL compati | ISSI 矽成半导体 |   | ||
128K x 8 HIGH-SPEED CMOS STATIC RAM FEATURES • High-speed access time: 12, 15 ns • Low active power: 160 mW (typical) • Low standby power: 1000 μW (typical) CMOS standby • Output Enable (OE) and two Chip Enable (CE1 and CE2) inputs for ease in applications • Fully static operation: no clock or refresh required • TTL compati | ISSI 矽成半导体 | | ||
128K x 8 HIGH-SPEED CMOS STATIC RAM FEATURES • High-speed access time: 12, 15 ns • Low active power: 160 mW (typical) • Low standby power: 1000 μW (typical) CMOS standby • Output Enable (OE) and two Chip Enable (CE1 and CE2) inputs for ease in applications • Fully static operation: no clock or refresh required • TTL compati | ISSI 矽成半导体 | | ||
128K x 8 HIGH-SPEED CMOS STATIC RAM FEATURES • High-speed access time: 12, 15 ns • Low active power: 160 mW (typical) • Low standby power: 1000 μW (typical) CMOS standby • Output Enable (OE) and two Chip Enable (CE1 and CE2) inputs for ease in applications • Fully static operation: no clock or refresh required • TTL compati | ISSI 矽成半导体 | | ||
128K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with | ISSI 矽成半导体 | | ||
128K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with | ISSI 矽成半导体 | | ||
128K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with | ISSI 矽成半导体 | | ||
128K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with | ISSI 矽成半导体 | | ||
128K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with | ISSI 矽成半导体 | | ||
128K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with | ISSI 矽成半导体 | | ||
128K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with | ISSI 矽成半导体 | | ||
128K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with | ISSI 矽成半导体 | | ||
128K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with | ISSI 矽成半导体 | | ||
128K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with | ISSI 矽成半导体 | | ||
128K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with | ISSI 矽成半导体 | | ||
128K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with | ISSI 矽成半导体 | | ||
128K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with | ISSI 矽成半导体 | | ||
256K X 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 5V SUPPLY 256K X 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 5V SUPPLY | ISSI 矽成半导体 | | ||
256K x 16 HIGH-SPEED CMOS STATIC RAM FEATURES HIGH SPEED: (IS61/64C25616AL) • High-speed access time: 10ns, 12 ns • Low Active Power: 150 mW (typical) • Low Standby Power: 10 mW (typical) CMOS standby LOW POWER: (IS61/64C25616AS) • High-speed access time: 25 ns • Low Active Power: 75 mW (typical) • Low Standby Power: 1 mW (t | ISSI 矽成半导体 | | ||
256K x 16 HIGH-SPEED CMOS STATIC RAM FEATURES HIGH SPEED: (IS61/64C25616AL) • High-speed access time: 10ns, 12 ns • Low Active Power: 150 mW (typical) • Low Standby Power: 10 mW (typical) CMOS standby LOW POWER: (IS61/64C25616AS) • High-speed access time: 25 ns • Low Active Power: 75 mW (typical) • Low Standby Power: 1 mW (t | ISSI 矽成半导体 | | ||
256K x 16 HIGH-SPEED CMOS STATIC RAM FEATURES HIGH SPEED: (IS61/64C25616AL) • High-speed access time: 10ns, 12 ns • Low Active Power: 150 mW (typical) • Low Standby Power: 10 mW (typical) CMOS standby LOW POWER: (IS61/64C25616AS) • High-speed access time: 25 ns • Low Active Power: 75 mW (typical) • Low Standby Power: 1 mW (t | ISSI 矽成半导体 | | ||
256K x 16 HIGH-SPEED CMOS STATIC RAM FEATURES HIGH SPEED: (IS61/64C25616AL) • High-speed access time: 10ns, 12 ns • Low Active Power: 150 mW (typical) • Low Standby Power: 10 mW (typical) CMOS standby LOW POWER: (IS61/64C25616AS) • High-speed access time: 25 ns • Low Active Power: 75 mW (typical) • Low Standby Power: 1 mW (t | ISSI 矽成半导体 | | ||
256K x 16 HIGH-SPEED CMOS STATIC RAM FEATURES HIGH SPEED: (IS61/64C25616AL) • High-speed access time: 10ns, 12 ns • Low Active Power: 150 mW (typical) • Low Standby Power: 10 mW (typical) CMOS standby LOW POWER: (IS61/64C25616AS) • High-speed access time: 25 ns • Low Active Power: 75 mW (typical) • Low Standby Power: 1 mW (t | ISSI 矽成半导体 | | ||
256K x 16 HIGH-SPEED CMOS STATIC RAM FEATURES HIGH SPEED: (IS61/64C25616AL) • High-speed access time: 10ns, 12 ns • Low Active Power: 150 mW (typical) • Low Standby Power: 10 mW (typical) CMOS standby LOW POWER: (IS61/64C25616AS) • High-speed access time: 25 ns • Low Active Power: 75 mW (typical) • Low Standby Power: 1 mW (t | ISSI 矽成半导体 | | ||
256K x 16 HIGH-SPEED CMOS STATIC RAM FEATURES HIGH SPEED: (IS61/64C25616AL) • High-speed access time: 10ns, 12 ns • Low Active Power: 150 mW (typical) • Low Standby Power: 10 mW (typical) CMOS standby LOW POWER: (IS61/64C25616AS) • High-speed access time: 25 ns • Low Active Power: 75 mW (typical) • Low Standby Power: 1 mW (t | ISSI 矽成半导体 | | ||
256K x 16 HIGH-SPEED CMOS STATIC RAM FEATURES HIGH SPEED: (IS61/64C25616AL) • High-speed access time: 10ns, 12 ns • Low Active Power: 150 mW (typical) • Low Standby Power: 10 mW (typical) CMOS standby LOW POWER: (IS61/64C25616AS) • High-speed access time: 25 ns • Low Active Power: 75 mW (typical) • Low Standby Power: 1 mW (t | ISSI 矽成半导体 | | ||
32K x 8 HIGH-SPEED CMOS STATIC RAM FEATURES • High-speed access time: 10, 12 ns • CMOS Low Power Operation — 1 mW (typical) CMOS standby — 125 mW (typical) operating • Fully static operation: no clock or refresh required • TTL compatible inputs and outputs • Single 5V power supply • Lead-free available | ISSI 矽成半导体 | | ||
32K x 8 HIGH-SPEED CMOS STATIC RAM FEATURES • High-speed access time: 10, 12 ns • CMOS Low Power Operation — 1 mW (typical) CMOS standby — 125 mW (typical) operating • Fully static operation: no clock or refresh required • TTL compatible inputs and outputs • Single 5V power supply • Lead-free available | ISSI 矽成半导体 | | ||
32K x 8 HIGH-SPEED CMOS STATIC RAM FEATURES • High-speed access time: 10, 12 ns • CMOS Low Power Operation — 1 mW (typical) CMOS standby — 125 mW (typical) operating • Fully static operation: no clock or refresh required • TTL compatible inputs and outputs • Single 5V power supply • Lead-free available | ISSI 矽成半导体 | | ||
32K x 8 HIGH-SPEED CMOS STATIC RAM FEATURES • High-speed access time: 10, 12 ns • CMOS Low Power Operation — 1 mW (typical) CMOS standby — 125 mW (typical) operating • Fully static operation: no clock or refresh required • TTL compatible inputs and outputs • Single 5V power supply • Lead-free available | ISSI 矽成半导体 | | ||
32K x 8 HIGH-SPEED CMOS STATIC RAM FEATURES • High-speed access time: 10, 12 ns • CMOS Low Power Operation — 1 mW (typical) CMOS standby — 125 mW (typical) operating • Fully static operation: no clock or refresh required • TTL compatible inputs and outputs • Single 5V power supply • Lead-free available | ISSI 矽成半导体 | | ||
32K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS61C3216 is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumption. | ICSI | | ||
32K x 16 HIGH-SPEED CMOS STATIC RAM 32K x 16 HIGH-SPEED CMOS STATIC RAM | ISSI 矽成半导体 | | ||
32K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS61C3216 is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumption. | ICSI | | ||
32K x 16 HIGH-SPEED CMOS STATIC RAM 32K x 16 HIGH-SPEED CMOS STATIC RAM | ISSI 矽成半导体 | | ||
32K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS61C3216 is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumption. | ICSI | | ||
32K x 16 HIGH-SPEED CMOS STATIC RAM 32K x 16 HIGH-SPEED CMOS STATIC RAM | ISSI 矽成半导体 | | ||
32K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS61C3216 is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumption. | ICSI | | ||
32K x 16 HIGH-SPEED CMOS STATIC RAM 32K x 16 HIGH-SPEED CMOS STATIC RAM | ISSI 矽成半导体 | | ||
32K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS61C3216 is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumption. | ICSI | | ||
32K x 16 HIGH-SPEED CMOS STATIC RAM 32K x 16 HIGH-SPEED CMOS STATIC RAM | ISSI 矽成半导体 | | ||
32K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS61C3216 is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumption. | ICSI | | ||
32K x 16 HIGH-SPEED CMOS STATIC RAM 32K x 16 HIGH-SPEED CMOS STATIC RAM | ISSI 矽成半导体 | | ||
32K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS61C3216 is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumption. | ICSI | | ||
32K x 16 HIGH-SPEED CMOS STATIC RAM 32K x 16 HIGH-SPEED CMOS STATIC RAM | ISSI 矽成半导体 | | ||
32K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS61C3216 is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumption. | ICSI | | ||
32K x 16 HIGH-SPEED CMOS STATIC RAM 32K x 16 HIGH-SPEED CMOS STATIC RAM | ISSI 矽成半导体 | | ||
32K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS61C3216 is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumption. | ICSI | | ||
32K x 16 HIGH-SPEED CMOS STATIC RAM 32K x 16 HIGH-SPEED CMOS STATIC RAM | ISSI 矽成半导体 | | ||
32K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS61C3216 is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumption. | ICSI | | ||
32K x 16 HIGH-SPEED CMOS STATIC RAM 32K x 16 HIGH-SPEED CMOS STATIC RAM | ISSI 矽成半导体 | | ||
32K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS61C3216 is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumption. | ICSI | | ||
32K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS61C3216 is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumption. | ICSI | | ||
2M x 8 HIGH-SPEED CMOS STATIC RAM 文件：365.22 Kbytes Page：19 Pages | ISSI 矽成半导体 | | ||
PHOTON COUPLED BILATERAL ANALOG FET 文件：79.36 Kbytes Page：3 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
PHOTON COUPLED BILATERAL ANALOG FET 文件：79.36 Kbytes Page：3 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
PHOTON COUPLED BILATERAL ANALOG FET 文件：79.36 Kbytes Page：3 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
PHOTON COUPLED BILATERAL ANALOG FET 文件：79.36 Kbytes Page：3 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
紧凑型短波红外相机 | ETC 知名厂家 | ETC | | |
128K x 8 HIGH-SPEED CMOS STATIC RAM | ISSI 矽成半导体 | |
IS61产品属性
- 类型
描述
- 型号
IS61
- 制造商
IDEC Corporation
- 功能描述
Sensor Inductive NPN NO
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ISSI/芯成 |
23+ |
SOJ32 |
56248 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
ISSI |
25+ |
BGA |
4500 |
ISSI存储芯片在售 |
|||
ISSI |
TSOP |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
ISSI |
25+ |
SOJ32 |
8000 |
深圳现货,原装正品 |
|||
ISSI |
23+ |
TSOP |
8500 |
||||
ISSI |
24+ |
STSOP(32) |
12000 |
专营ISSI进口原装正品假一赔十可開17增值稅票 |
|||
ISSI |
24+ |
TSOP |
5825 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
|||
ISSI |
2008 |
TSOP |
1 |
厂家指定一级分销全新原装现货价 |
|||
ISSI |
26+ |
SOJ32 |
76200 |
全新原装进口现货,,本公司承诺原装正品假一赔百 |
|||
ISSI |
2025+ |
TSOP |
3795 |
全新原装、公司现货热卖 |
IS61规格书下载地址
IS61参数引脚图相关
- l101
- l100
- ku波段
- kt250
- kse13005
- ks20
- km710
- ka5q1265rf
- k9f1208
- k310
- k2698
- k233
- k2055
- k2010
- jumper
- jtag接口
- jk触发器
- j111
- j108
- isd1420
- IS7000
- IS-70
- IS662X
- IS662
- IS661X
- IS661
- IS660X
- IS660
- IS655A
- IS654A
- IS627
- IS623
- IS622
- IS621
- IS620
- IS61C67
- IS61C6416AL-12TLI
- IS61C6416AL-12KLI
- IS61C5128AS-25TLI-TR
- IS61C5128AS-25TLI
- IS61C5128AS-25QLI
- IS61C5128AL-10TLI
- IS61C5128AL-10KLI-TR
- IS61C5128AL-10KLI
- IS61C3216AL-12TLI
- IS61C256AL-12TLI
- IS61C256AL-12JLI-TR
- IS61C256AL-12JLI
- IS61C256AL-12J>
- IS61C25616AS-25TLI
- IS61C25616AL-10TLI
- IS61C25616AL-10KLI
- IS61C1024AL-12TLI
- IS61C1024AL-12KLI
- IS61C1024AL-12JLI-TR
- IS61C1024AL-12JLI
- IS611X
- IS611
- IS610X
- IS610
- IS609
- IS608X
- IS608
- IS607X
- IS607
- IS6051
- IS604X
- IS604
- IS6030
- IS602-Y-2
- IS601-YSY-6
- IS601-Y-7
- IS601-Y-1
- IS601-XXXPFR-04
- IS601-XP-12
- IS601-XP-08
- IS601-6
- IS6015X
- IS6015
- IS6010X
- IS6010
- IS600XP-03
- IS600-9
- IS6005X
- IS6005
- IS6003
- IS-6
- IS-5114
- IS50-48
- IS50-24
- IS50-12
- IS500HG
- IS-500
- IS49NLC18160-25BL
- IS49FL004T-33VCE
- IS471FE
- IS46TR16640B-15GBLA2-TR
- IS46TR16640A-15GBLA2
- IS46TR16640A-125JBLA1
- IS46TR16256A-15HBLA1
IS61数据表相关新闻
IS61C1024AL-12KLI
进口代理
2022-9-21IS61C5128AS-25TLI
进口代理
2022-8-10IS61LV25616AL-10T现货热卖！！！！
IS61LV25616AL-10T现货热卖！！！！
2021-7-7IS46LR32160B-6BLA1
IS46LR32160B-6BLA1
2021-6-2IS46TR16256AL-125KBLA2
4 Gbit FBGA-96 SDRAM - DDR3 动态随机存取存储器 , 2 Gbit SDRAM - DDR2 16 bit 动态随机存取存储器 , FBGA-84 16 bit 动态随机存取存储器 , 4 Gbit SDRAM - DDR3L - 40 C 动态随机存取存储器 , TSOP-54 动态随机存取存储器 , AS4C256M16D4-75 动态随机存取存储器
2020-7-9IS46TR16128CL-125KBLA1
4 Gbit FBGA-96 SDRAM - DDR3 动态随机存取存储器 , 2 Gbit SDRAM - DDR2 16 bit 动态随机存取存储器 , FBGA-84 16 bit 动态随机存取存储器 , 4 Gbit SDRAM - DDR3L - 40 C 动态随机存取存储器 , TSOP-54 动态随机存取存储器 , AS4C256M16D4-75 动态随机存取存储器
2020-7-9
DdatasheetPDF页码索引
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