IS61C25616价格

参考价格:¥23.8669

型号:IS61C25616AL-10KLI 品牌:ISSI 备注:这里有IS61C25616多少钱,2026年最近7天走势,今日出价,今日竞价,IS61C25616批发/采购报价,IS61C25616行情走势销售排行榜,IS61C25616报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IS61C25616

256K X 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 5V SUPPLY

256K X 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 5V SUPPLY

ISSI

矽成半导体

IS61C25616

256K X 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 5V SUPPLY

ISSI

矽成半导体

256K x 16 HIGH-SPEED CMOS STATIC RAM

FEATURES HIGH SPEED: (IS61/64C25616AL) • High-speed access time: 10ns, 12 ns • Low Active Power: 150 mW (typical) • Low Standby Power: 10 mW (typical) CMOS standby LOW POWER: (IS61/64C25616AS) • High-speed access time: 25 ns • Low Active Power: 75 mW (typical) • Low Standby Power: 1 mW (t

ISSI

矽成半导体

256K x 16 HIGH-SPEED CMOS STATIC RAM

FEATURES HIGH SPEED: (IS61/64C25616AL) • High-speed access time: 10ns, 12 ns • Low Active Power: 150 mW (typical) • Low Standby Power: 10 mW (typical) CMOS standby LOW POWER: (IS61/64C25616AS) • High-speed access time: 25 ns • Low Active Power: 75 mW (typical) • Low Standby Power: 1 mW (t

ISSI

矽成半导体

256K x 16 HIGH-SPEED CMOS STATIC RAM

FEATURES HIGH SPEED: (IS61/64C25616AL) • High-speed access time: 10ns, 12 ns • Low Active Power: 150 mW (typical) • Low Standby Power: 10 mW (typical) CMOS standby LOW POWER: (IS61/64C25616AS) • High-speed access time: 25 ns • Low Active Power: 75 mW (typical) • Low Standby Power: 1 mW (t

ISSI

矽成半导体

256K x 16 HIGH-SPEED CMOS STATIC RAM

FEATURES HIGH SPEED: (IS61/64C25616AL) • High-speed access time: 10ns, 12 ns • Low Active Power: 150 mW (typical) • Low Standby Power: 10 mW (typical) CMOS standby LOW POWER: (IS61/64C25616AS) • High-speed access time: 25 ns • Low Active Power: 75 mW (typical) • Low Standby Power: 1 mW (t

ISSI

矽成半导体

256K x 16 HIGH-SPEED CMOS STATIC RAM

FEATURES HIGH SPEED: (IS61/64C25616AL) • High-speed access time: 10ns, 12 ns • Low Active Power: 150 mW (typical) • Low Standby Power: 10 mW (typical) CMOS standby LOW POWER: (IS61/64C25616AS) • High-speed access time: 25 ns • Low Active Power: 75 mW (typical) • Low Standby Power: 1 mW (t

ISSI

矽成半导体

256K x 16 HIGH-SPEED CMOS STATIC RAM

FEATURES HIGH SPEED: (IS61/64C25616AL) • High-speed access time: 10ns, 12 ns • Low Active Power: 150 mW (typical) • Low Standby Power: 10 mW (typical) CMOS standby LOW POWER: (IS61/64C25616AS) • High-speed access time: 25 ns • Low Active Power: 75 mW (typical) • Low Standby Power: 1 mW (t

ISSI

矽成半导体

256K x 16 HIGH-SPEED CMOS STATIC RAM

FEATURES HIGH SPEED: (IS61/64C25616AL) • High-speed access time: 10ns, 12 ns • Low Active Power: 150 mW (typical) • Low Standby Power: 10 mW (typical) CMOS standby LOW POWER: (IS61/64C25616AS) • High-speed access time: 25 ns • Low Active Power: 75 mW (typical) • Low Standby Power: 1 mW (t

ISSI

矽成半导体

256K x 16 HIGH-SPEED CMOS STATIC RAM

FEATURES HIGH SPEED: (IS61/64C25616AL) • High-speed access time: 10ns, 12 ns • Low Active Power: 150 mW (typical) • Low Standby Power: 10 mW (typical) CMOS standby LOW POWER: (IS61/64C25616AS) • High-speed access time: 25 ns • Low Active Power: 75 mW (typical) • Low Standby Power: 1 mW (t

ISSI

矽成半导体

5V High-Speed Asynchronous SRAM

ISSI

矽成半导体

256K x 16 HIGH-SPEED CMOS STATIC RAM

文件:258.589 Kbytes Page:17 Pages

ISSI

矽成半导体

256K x 16 HIGH-SPEED CMOS STATIC RAM

文件:258.589 Kbytes Page:17 Pages

ISSI

矽成半导体

256K x 16 HIGH-SPEED CMOS STATIC RAM

文件:258.589 Kbytes Page:17 Pages

ISSI

矽成半导体

封装/外壳:44-BSOJ(0.400",10.16mm 宽) 包装:卷带(TR) 描述:IC SRAM 4MBIT PARALLEL 44SOJ 集成电路(IC) 存储器

ETC

知名厂家

256K x 16 HIGH-SPEED CMOS STATIC RAM

文件:258.589 Kbytes Page:17 Pages

ISSI

矽成半导体

256K x 16 HIGH-SPEED CMOS STATIC RAM

文件:258.589 Kbytes Page:17 Pages

ISSI

矽成半导体

封装/外壳:44-TSOP(0.400",10.16mm 宽) 包装:卷带(TR) 描述:IC SRAM 4MBIT PARALLEL 44TSOP II 集成电路(IC) 存储器

ETC

知名厂家

256K x 16 HIGH-SPEED CMOS STATIC RAM

文件:258.589 Kbytes Page:17 Pages

ISSI

矽成半导体

256K x 16 HIGH-SPEED CMOS STATIC RAM

文件:258.589 Kbytes Page:17 Pages

ISSI

矽成半导体

256K x 16 HIGH-SPEED CMOS STATIC RAM

文件:258.589 Kbytes Page:17 Pages

ISSI

矽成半导体

256K x 16 HIGH-SPEED CMOS STATIC RAM

文件:258.589 Kbytes Page:17 Pages

ISSI

矽成半导体

256K x 16 HIGH-SPEED CMOS STATIC RAM

文件:258.589 Kbytes Page:17 Pages

ISSI

矽成半导体

256K x 16 HIGH-SPEED CMOS STATIC RAM

文件:258.589 Kbytes Page:17 Pages

ISSI

矽成半导体

IS61C25616产品属性

  • 类型

    描述

  • 型号

    IS61C25616

  • 制造商

    ISSI

  • 制造商全称

    Integrated Silicon Solution, Inc

  • 功能描述

    256K X 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 5V SUPPLY

更新时间:2026-1-27 18:39:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ISSI
21+
TSOP44
1975
ISSI
23+
BGAQFP
8659
原装公司现货!原装正品价格优势.
ISSI
23+
44-TSOP
65480
ISSI
24+
TSOP2(44)
12000
专营ISSI进口原装正品假一赔十可开17增值税票
25+
1060
全新原装!优势库存热卖中!
ISSI
26+
TSOP
76200
全新原装进口现货,,本公司承诺原装正品假一赔百
INTEGRATEDSILICONSOLUTION
2022+
5000
只做原装,价格优惠,长期供货。
IDT
26+
TQFP80
9526
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
ISSI
2223+
TSOP44
26800
只做原装正品假一赔十为客户做到零风险
ISSI/芯成
2025+
TSOP
2000
原装进口价格优 请找坤融电子!

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