型号 功能描述 生产厂家 企业 LOGO 操作
IS61C12816

128K x 16 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ISSI IS61C12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with

ISSI

矽成半导体

IS61C12816

128K x 16 HIGH-SPEED CMOS STATIC RAM

ISSI

矽成半导体

128K x 16 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ISSI IS61C12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with

ISSI

矽成半导体

128K x 16 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ISSI IS61C12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with

ISSI

矽成半导体

128K x 16 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ISSI IS61C12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with

ISSI

矽成半导体

128K x 16 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ISSI IS61C12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with

ISSI

矽成半导体

128K x 16 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ISSI IS61C12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with

ISSI

矽成半导体

128K x 16 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ISSI IS61C12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with

ISSI

矽成半导体

128K x 16 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ISSI IS61C12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with

ISSI

矽成半导体

128K x 16 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ISSI IS61C12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with

ISSI

矽成半导体

128K x 16 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ISSI IS61C12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with

ISSI

矽成半导体

128K x 16 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ISSI IS61C12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with

ISSI

矽成半导体

128K x 16 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ISSI IS61C12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with

ISSI

矽成半导体

128K x 16 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ISSI IS61C12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with

ISSI

矽成半导体

IS61C12816产品属性

  • 类型

    描述

  • 型号

    IS61C12816

  • 制造商

    ISSI

  • 制造商全称

    Integrated Silicon Solution, Inc

  • 功能描述

    128K x 16 HIGH-SPEED CMOS STATIC RAM

更新时间:2026-3-2 16:51:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ISSI
2015+
SOP/DIP
19889
一级代理原装现货,特价热卖!
ICS
22+
SOJ42
8000
原装正品支持实单
ISSI
2023+
TSOP44
53500
正品,原装现货
ISSI
24+
TSOP44
8100
绝对原装现货,价格低,欢迎询购!
ISSI
22+
TQFP
5000
全新原装现货!自家库存!
ISSI
25+
TSOP44
3629
原装优势!房间现货!欢迎来电!
ISSI
25+
TSOP
500000
行业低价,代理渠道
ISSI/芯成
25+
TSOP44
2158
全新原装正品支持含税
ISSI
TSOP44
14
全新原装进口自己库存优势
ISSI
2026+
TSOP44
54658
百分百原装现货 实单必成

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