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IS45S价格

参考价格：￥47.7338

型号：IS45S16160G-7CTLA1 品牌：ISSI 备注：这里有IS45S多少钱，2025年最近7天走势，今日出价，今日竞价，IS45S批发/采购报价，IS45S行情走势销售排行榜，IS45S报价。

型号	功能描述	生产厂家企业	LOGO
IS45S16320B	64M x 8, 32M x 16 512Mb SYNCHRONOUS DRAM OVERVIEW ISSIs 512Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 512Mb SDRAM is organized as follows. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous;	ISSI 矽成半导体	ISSI
IS45S16320B-7BLA1	64M x 8, 32M x 16 512Mb SYNCHRONOUS DRAM OVERVIEW ISSIs 512Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 512Mb SDRAM is organized as follows. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous;	ISSI 矽成半导体	ISSI
IS45S16320B-7TLA1	64M x 8, 32M x 16 512Mb SYNCHRONOUS DRAM OVERVIEW ISSIs 512Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 512Mb SDRAM is organized as follows. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous;	ISSI 矽成半导体	ISSI
IS45S16320D-6BLA1	16Mx32, 32Mx16, 64Mx8 512Mb SDRAM FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply: Vdd/Vddq = 2.3V-3.6V IS42/45SxxxxxD - Vdd/Vddq = 3.3V IS42/45RxxxxxD - Vdd/Vddq = 2.5 • LVTTL interface • Prog	ISSI 矽成半导体	ISSI
IS45S16320D-6TLA1	16Mx32, 32Mx16, 64Mx8 512Mb SDRAM FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply: Vdd/Vddq = 2.3V-3.6V IS42/45SxxxxxD - Vdd/Vddq = 3.3V IS42/45RxxxxxD - Vdd/Vddq = 2.5 • LVTTL interface • Prog	ISSI 矽成半导体	ISSI
IS45S16320D-7BLA1	16Mx32, 32Mx16, 64Mx8 512Mb SDRAM FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply: Vdd/Vddq = 2.3V-3.6V IS42/45SxxxxxD - Vdd/Vddq = 3.3V IS42/45RxxxxxD - Vdd/Vddq = 2.5 • LVTTL interface • Prog	ISSI 矽成半导体	ISSI
IS45S16320D-7BLA2	16Mx32, 32Mx16, 64Mx8 512Mb SDRAM FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply: Vdd/Vddq = 2.3V-3.6V IS42/45SxxxxxD - Vdd/Vddq = 3.3V IS42/45RxxxxxD - Vdd/Vddq = 2.5 • LVTTL interface • Prog	ISSI 矽成半导体	ISSI
IS45S16320D-7CTLA1	16Mx32, 32Mx16, 64Mx8 512Mb SDRAM FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply: Vdd/Vddq = 2.3V-3.6V IS42/45SxxxxxD - Vdd/Vddq = 3.3V IS42/45RxxxxxD - Vdd/Vddq = 2.5 • LVTTL interface • Prog	ISSI 矽成半导体	ISSI
IS45S16320D-7CTLA2	16Mx32, 32Mx16, 64Mx8 512Mb SDRAM FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply: Vdd/Vddq = 2.3V-3.6V IS42/45SxxxxxD - Vdd/Vddq = 3.3V IS42/45RxxxxxD - Vdd/Vddq = 2.5 • LVTTL interface • Prog	ISSI 矽成半导体	ISSI
IS45S16320D-7TLA1	16Mx32, 32Mx16, 64Mx8 512Mb SDRAM FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply: Vdd/Vddq = 2.3V-3.6V IS42/45SxxxxxD - Vdd/Vddq = 3.3V IS42/45RxxxxxD - Vdd/Vddq = 2.5 • LVTTL interface • Prog	ISSI 矽成半导体	ISSI
IS45S16320D-7TLA2	16Mx32, 32Mx16, 64Mx8 512Mb SDRAM FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply: Vdd/Vddq = 2.3V-3.6V IS42/45SxxxxxD - Vdd/Vddq = 3.3V IS42/45RxxxxxD - Vdd/Vddq = 2.5 • LVTTL interface • Prog	ISSI 矽成半导体	ISSI
IS45S32200E	512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM OVERVIEW ISSIs 64Mb Synchronous DRAM IS42/45S32200E is organized as 524,288 bits x 32-bit x 4-bank for improved performance. The synchronous DRAMs achieve high speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. GENERAL DES	ISSI 矽成半导体	ISSI
IS45S32200E-6BLA1	512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM OVERVIEW ISSIs 64Mb Synchronous DRAM IS42/45S32200E is organized as 524,288 bits x 32-bit x 4-bank for improved performance. The synchronous DRAMs achieve high speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. GENERAL DES	ISSI 矽成半导体	ISSI
IS45S32200E-6TLA1	512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM OVERVIEW ISSIs 64Mb Synchronous DRAM IS42/45S32200E is organized as 524,288 bits x 32-bit x 4-bank for improved performance. The synchronous DRAMs achieve high speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. GENERAL DES	ISSI 矽成半导体	ISSI
IS45S32200E-75EBLA1	512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM OVERVIEW ISSIs 64Mb Synchronous DRAM IS42/45S32200E is organized as 524,288 bits x 32-bit x 4-bank for improved performance. The synchronous DRAMs achieve high speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. GENERAL DES	ISSI 矽成半导体	ISSI
IS45S32200E-75ETLA1	512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM OVERVIEW ISSIs 64Mb Synchronous DRAM IS42/45S32200E is organized as 524,288 bits x 32-bit x 4-bank for improved performance. The synchronous DRAMs achieve high speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. GENERAL DES	ISSI 矽成半导体	ISSI
IS45S32200E-7BA1	512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM OVERVIEW ISSIs 64Mb Synchronous DRAM IS42/45S32200E is organized as 524,288 bits x 32-bit x 4-bank for improved performance. The synchronous DRAMs achieve high speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. GENERAL DES	ISSI 矽成半导体	ISSI
IS45S32200E-7BLA1	512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM OVERVIEW ISSIs 64Mb Synchronous DRAM IS42/45S32200E is organized as 524,288 bits x 32-bit x 4-bank for improved performance. The synchronous DRAMs achieve high speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. GENERAL DES	ISSI 矽成半导体	ISSI
IS45S32200E-7BLA2	512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM OVERVIEW ISSIs 64Mb Synchronous DRAM IS42/45S32200E is organized as 524,288 bits x 32-bit x 4-bank for improved performance. The synchronous DRAMs achieve high speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. GENERAL DES	ISSI 矽成半导体	ISSI
IS45S32200E-7TLA1	512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM OVERVIEW ISSIs 64Mb Synchronous DRAM IS42/45S32200E is organized as 524,288 bits x 32-bit x 4-bank for improved performance. The synchronous DRAMs achieve high speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. GENERAL DES	ISSI 矽成半导体	ISSI
IS45S32200E-7TLA2	512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM OVERVIEW ISSIs 64Mb Synchronous DRAM IS42/45S32200E is organized as 524,288 bits x 32-bit x 4-bank for improved performance. The synchronous DRAMs achieve high speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. GENERAL DES	ISSI 矽成半导体	ISSI
IS45S32400E	4M x 32 128Mb SYNCHRONOUS DRAM OVERVIEW ISSIs 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 128Mb SDRAM is organized in 1Meg x 32 bit x 4 Banks. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully sync	ISSI 矽成半导体	ISSI
IS45S32400E-6BLA1	4M x 32 128Mb SYNCHRONOUS DRAM OVERVIEW ISSIs 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 128Mb SDRAM is organized in 1Meg x 32 bit x 4 Banks. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully sync	ISSI 矽成半导体	ISSI
IS45S32400E-6BLA2	4M x 32 128Mb SYNCHRONOUS DRAM OVERVIEW ISSIs 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 128Mb SDRAM is organized in 1Meg x 32 bit x 4 Banks. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully sync	ISSI 矽成半导体	ISSI
IS45S32400E-6TLA1	4M x 32 128Mb SYNCHRONOUS DRAM OVERVIEW ISSIs 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 128Mb SDRAM is organized in 1Meg x 32 bit x 4 Banks. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully sync	ISSI 矽成半导体	ISSI
IS45S32400E-7BA1	4M x 32 128Mb SYNCHRONOUS DRAM OVERVIEW ISSIs 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 128Mb SDRAM is organized in 1Meg x 32 bit x 4 Banks. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully sync	ISSI 矽成半导体	ISSI
IS45S32400E-7BLA1	4M x 32 128Mb SYNCHRONOUS DRAM OVERVIEW ISSIs 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 128Mb SDRAM is organized in 1Meg x 32 bit x 4 Banks. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully sync	ISSI 矽成半导体	ISSI
IS45S32400E-7BLA2	4M x 32 128Mb SYNCHRONOUS DRAM OVERVIEW ISSIs 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 128Mb SDRAM is organized in 1Meg x 32 bit x 4 Banks. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully sync	ISSI 矽成半导体	ISSI
IS45S32400E-7TLA1	4M x 32 128Mb SYNCHRONOUS DRAM OVERVIEW ISSIs 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 128Mb SDRAM is organized in 1Meg x 32 bit x 4 Banks. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully sync	ISSI 矽成半导体	ISSI
IS45S32400E-7TLA2	4M x 32 128Mb SYNCHRONOUS DRAM OVERVIEW ISSIs 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 128Mb SDRAM is organized in 1Meg x 32 bit x 4 Banks. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully sync	ISSI 矽成半导体	ISSI
IS45S16100C1	512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM 文件：803.48 Kbytes Page：81 Pages	ISSI 矽成半导体	ISSI
IS45S16100C1-7BLA	512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM 文件：803.48 Kbytes Page：81 Pages	ISSI 矽成半导体	ISSI
IS45S16100C1-7BLA1	512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM 文件：803.48 Kbytes Page：81 Pages	ISSI 矽成半导体	ISSI
IS45S16100C1-7BLA1-TR	封装/外壳：60-TFBGA 包装：托盘描述：IC DRAM 16MBIT PAR 60MINIBGA 集成电路（IC）存储器	ETC 知名厂家	ETC
IS45S16100C1-7TA1	512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM 文件：803.48 Kbytes Page：81 Pages	ISSI 矽成半导体	ISSI
IS45S16100C1-7TLA	512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM 文件：803.48 Kbytes Page：81 Pages	ISSI 矽成半导体	ISSI
IS45S16100C1-7TLA1	512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM 文件：803.48 Kbytes Page：81 Pages	ISSI 矽成半导体	ISSI
IS45S16100C1-7TLA1	封装/外壳：50-TSOP（0.400"，10.16mm 宽）包装：托盘描述：IC DRAM 16MBIT PAR 50TSOP II 集成电路（IC）存储器	ETC 知名厂家	ETC
IS45S16100E	SDR SDRAM	ISSI 矽成半导体	ISSI
IS45S16100E	512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM 文件：1.61909 Mbytes Page：82 Pages	ISSI 矽成半导体	ISSI
IS45S16100E-6TLA1	512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM 文件：1.61909 Mbytes Page：82 Pages	ISSI 矽成半导体	ISSI
IS45S16100E-7BLA1	512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM 文件：1.61909 Mbytes Page：82 Pages	ISSI 矽成半导体	ISSI
IS45S16100E-7BLA2	512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM 文件：1.61909 Mbytes Page：82 Pages	ISSI 矽成半导体	ISSI
IS45S16100E-7TLA1	512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM 文件：1.61909 Mbytes Page：82 Pages	ISSI 矽成半导体	ISSI
IS45S16100E-7TLA2	512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM 文件：1.61909 Mbytes Page：82 Pages	ISSI 矽成半导体	ISSI
IS45S16100F	Random column address every clock cycle 文件：1.66808 Mbytes Page：86 Pages	ISSI 矽成半导体	ISSI
IS45S16100F	SDR SDRAM	ISSI 矽成半导体	ISSI
IS45S16100H	SDR SDRAM	ISSI 矽成半导体	ISSI
IS45S16160C	256 Mb Single Data Rate Synchronous DRAM 文件：1.59869 Mbytes Page：40 Pages	ISSI 矽成半导体	ISSI
IS45S16160C-75TLA1	256 Mb Single Data Rate Synchronous DRAM 文件：1.59869 Mbytes Page：40 Pages	ISSI 矽成半导体	ISSI
IS45S16160C-7TLA1	256 Mb Single Data Rate Synchronous DRAM 文件：1.59869 Mbytes Page：40 Pages	ISSI 矽成半导体	ISSI
IS45S16160D	32Meg x 8, 16Meg x16 256-MBIT SYNCHRONOUS DRAM 文件：1.05062 Mbytes Page：63 Pages	ISSI 矽成半导体	ISSI
IS45S16160D-6BLA1	32Meg x 8, 16Meg x16 256-MBIT SYNCHRONOUS DRAM 文件：1.05062 Mbytes Page：63 Pages	ISSI 矽成半导体	ISSI
IS45S16160D-6TLA1	32Meg x 8, 16Meg x16 256-MBIT SYNCHRONOUS DRAM 文件：1.05062 Mbytes Page：63 Pages	ISSI 矽成半导体	ISSI
IS45S16160D-75EBLA1	32Meg x 8, 16Meg x16 256-MBIT SYNCHRONOUS DRAM 文件：1.05062 Mbytes Page：63 Pages	ISSI 矽成半导体	ISSI
IS45S16160D-75ETLA1	32Meg x 8, 16Meg x16 256-MBIT SYNCHRONOUS DRAM 文件：1.05062 Mbytes Page：63 Pages	ISSI 矽成半导体	ISSI
IS45S16160D-7BLA1	32Meg x 8, 16Meg x16 256-MBIT SYNCHRONOUS DRAM 文件：1.05062 Mbytes Page：63 Pages	ISSI 矽成半导体	ISSI
IS45S16160D-7BLA2	32Meg x 8, 16Meg x16 256-MBIT SYNCHRONOUS DRAM 文件：1.05062 Mbytes Page：63 Pages	ISSI 矽成半导体	ISSI
IS45S16160D-7CTNA1	32Meg x 8, 16Meg x16 256-MBIT SYNCHRONOUS DRAM 文件：1.05062 Mbytes Page：63 Pages	ISSI 矽成半导体	ISSI
IS45S16160D-7CTNA2	32Meg x 8, 16Meg x16 256-MBIT SYNCHRONOUS DRAM 文件：1.05062 Mbytes Page：63 Pages	ISSI 矽成半导体	ISSI

IS45S产品属性

类型
描述
型号
IS45S
制造商
IDEC Corporation
功能描述
SENS.IND. 10-30VDC PNP NC

IS45S供应商更多...

更新时间：2025-11-19 17:55:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市美思瑞电子科技有限公司	IS45S16320D-6CTLA1	ISSI	22+	SOP54	12245	现货,原厂原装假一罚十!	询价
深圳市纳立科技有限公司	IS45S16320D-6CTLA1	ISSI	三年内		1983	只做原装正品	询价
深圳市昊创电子有限公司	IS45S16320D-6CTLA1	ISSI/矽成	1712	SDRAM-AUTO/32MX16SD/TSOP	1	原装香港现货真实库存。低价	询价
瀚佳科技(深圳)有限公司	IS45S16320B-7TLA1-TR	ISSI, Integrated Silicon Solut	24+	54-TSOP II	56200	一级代理/放心采购	询价
深圳市卓越微芯电子有限公司	IS45S16320B-7CTNA1	ISSI	25+	TSOP54	3850	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市河锋鑫科技有限公司	IS45S16320B7TLA1TR	ISSI Integrated Silicon Soluti	22+	54TSOP II	9000	原厂渠道,现货配单	询价
贸泽芯城（深圳）电子科技有限公司	IS45S16320B-7TLA1	ISSI	23+	TSOP54	4784	一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、	询价
深圳市安富世纪电子有限公司	IS45S16320B-7TLA1-TR	ISSI, Integrated Silicon Solu	23+	54-TSOP II	7300	专注配单,只做原装进口现货	询价
瑞航达科技(深圳)有限公司	IS45S16320B-7TLA1	ISSI	1342		554	原装正品	询价
深圳市宏捷佳电子科技有限公司	IS45S16320B-7TLA1-TR	ISSI Integrated Silicon Solut	25+	54-TSOP(0.400 10.16mm 宽)	9350	独立分销商公司只做原装诚心经营免费试样正品保证	询价

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IS45S16320F-7BLA2
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IS45S价格

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IS45S供应商更多...

IS45S芯片相关品牌

IS45S规格书下载地址

IS45S参数引脚图相关

IS45S数据表相关新闻

IS45S16320F-7BLA2

IS43TR16640B-15GBLI-TR 动态随机存取存储器 1G, 1.5V, DDR3, 64Mx16, 1333MT/s @ 8-8-8, 96 ball BGA (9mm x13mm) RoHS, IT, T&R

IS43TR16640C-125JBLI 大量到货

IS45S16160D-75ETLA1-TR

IS45VM16320D-75BLA1

IS43R16800E-5TL公司大量原装正品现货/随时可以发货

DdatasheetPDF页码索引