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IS45S价格

参考价格：￥47.7338

型号：IS45S16160G-7CTLA1 品牌：ISSI 备注：这里有IS45S多少钱，2026年最近7天走势，今日出价，今日竞价，IS45S批发/采购报价，IS45S行情走势销售排行榜，IS45S报价。

型号	功能描述	生产厂家企业	LOGO
IS45S16100E	SDR SDRAM ·Synchronous, with 3.3V power supply\n·LVTTL interface\n·Programmable burst length (1, 2, 4, 8, full page)\n·Programmable burst sequence: Sequential/Interleave\n·Self refresh and Auto Refresh modes\n·Random column address every clock cycle\n·Programmable CAS latency (2, 3 clocks)\n·Burst read/write	ISSI 矽成半导体	ISSI
IS45S16100F	SDR SDRAM ·Synchronous, with 3.3V power supply\n·LVTTL interface\n·Programmable burst length (1, 2, 4, 8, full page)\n·Programmable burst sequence: Sequential/Interleave\n·Self refresh and Auto Refresh modes\n·Random column address every clock cycle\n·Programmable CAS latency (2, 3 clocks)\n·Burst read/write	ISSI 矽成半导体	ISSI
IS45S16100H	SDR SDRAM ·Synchronous, with 3.3V power supply\n·LVTTL interface\n·Programmable burst length (1, 2, 4, 8, full page)\n·Programmable burst sequence: Sequential/Interleave\n·Self refresh and Auto Refresh modes\n·Random column address every clock cycle\n·Programmable CAS latency (2, 3 clocks)\n·Burst read/write	ISSI 矽成半导体	ISSI
IS45S16160G	32Meg x 8, 16Meg x16 256Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 200,166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single Power supply: 3.3V + 0.3V • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burst	ISSI 矽成半导体	ISSI
IS45S16160G-6BLA1	32Meg x 8, 16Meg x16 256Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 200,166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single Power supply: 3.3V + 0.3V • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burst	ISSI 矽成半导体	ISSI
IS45S16160G-6BLA2	32Meg x 8, 16Meg x16 256Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 200,166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single Power supply: 3.3V + 0.3V • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burst	ISSI 矽成半导体	ISSI
IS45S16160G-6CTLA2	32Meg x 8, 16Meg x16 256Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 200,166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single Power supply: 3.3V + 0.3V • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burst	ISSI 矽成半导体	ISSI
IS45S16160G-6TLA1	32Meg x 8, 16Meg x16 256Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 200,166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single Power supply: 3.3V + 0.3V • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burst	ISSI 矽成半导体	ISSI
IS45S16160G-7BLA1	32Meg x 8, 16Meg x16 256Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 200,166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single Power supply: 3.3V + 0.3V • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burst	ISSI 矽成半导体	ISSI
IS45S16160G-7BLA2	32Meg x 8, 16Meg x16 256Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 200,166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single Power supply: 3.3V + 0.3V • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burst	ISSI 矽成半导体	ISSI
IS45S16160G-7CTLA1	32Meg x 8, 16Meg x16 256Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 200,166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single Power supply: 3.3V + 0.3V • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burst	ISSI 矽成半导体	ISSI
IS45S16160G-7CTLA2	32Meg x 8, 16Meg x16 256Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 200,166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single Power supply: 3.3V + 0.3V • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burst	ISSI 矽成半导体	ISSI
IS45S16160G-7TLA1	32Meg x 8, 16Meg x16 256Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 200,166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single Power supply: 3.3V + 0.3V • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burst	ISSI 矽成半导体	ISSI
IS45S16160G-7TLA2	32Meg x 8, 16Meg x16 256Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 200,166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single Power supply: 3.3V + 0.3V • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burst	ISSI 矽成半导体	ISSI
IS45S16160J	32Meg x 8, 16Meg x16 256Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single Power supply: 3.3V + 0.3V • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burs	ISSI 矽成半导体	ISSI
IS45S16160J-6BLA1	32Meg x 8, 16Meg x16 256Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single Power supply: 3.3V + 0.3V • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burs	ISSI 矽成半导体	ISSI
IS45S16160J-6BLA2	32Meg x 8, 16Meg x16 256Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single Power supply: 3.3V + 0.3V • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burs	ISSI 矽成半导体	ISSI
IS45S16160J-6CTLA2	32Meg x 8, 16Meg x16 256Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single Power supply: 3.3V + 0.3V • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burs	ISSI 矽成半导体	ISSI
IS45S16160J-6TLA1	32Meg x 8, 16Meg x16 256Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single Power supply: 3.3V + 0.3V • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burs	ISSI 矽成半导体	ISSI
IS45S16160J-6TLA2	32Meg x 8, 16Meg x16 256Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single Power supply: 3.3V + 0.3V • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burs	ISSI 矽成半导体	ISSI
IS45S16160J-7BLA1	32Meg x 8, 16Meg x16 256Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single Power supply: 3.3V + 0.3V • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burs	ISSI 矽成半导体	ISSI
IS45S16160J-7BLA2	32Meg x 8, 16Meg x16 256Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single Power supply: 3.3V + 0.3V • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burs	ISSI 矽成半导体	ISSI
IS45S16160J-7CTLA1	32Meg x 8, 16Meg x16 256Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single Power supply: 3.3V + 0.3V • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burs	ISSI 矽成半导体	ISSI
IS45S16160J-7CTLA2	32Meg x 8, 16Meg x16 256Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single Power supply: 3.3V + 0.3V • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burs	ISSI 矽成半导体	ISSI
IS45S16160J-7TLA1	32Meg x 8, 16Meg x16 256Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single Power supply: 3.3V + 0.3V • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burs	ISSI 矽成半导体	ISSI
IS45S16160J-7TLA2	32Meg x 8, 16Meg x16 256Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single Power supply: 3.3V + 0.3V • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burs	ISSI 矽成半导体	ISSI
IS45S16320B	64M x 8, 32M x 16 512Mb SYNCHRONOUS DRAM OVERVIEW ISSIs 512Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 512Mb SDRAM is organized as follows. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous;	ISSI 矽成半导体	ISSI
IS45S16320B-7BLA1	64M x 8, 32M x 16 512Mb SYNCHRONOUS DRAM OVERVIEW ISSIs 512Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 512Mb SDRAM is organized as follows. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous;	ISSI 矽成半导体	ISSI
IS45S16320B-7TLA1	64M x 8, 32M x 16 512Mb SYNCHRONOUS DRAM OVERVIEW ISSIs 512Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 512Mb SDRAM is organized as follows. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous;	ISSI 矽成半导体	ISSI
IS45S16320D-6BLA1	16Mx32, 32Mx16, 64Mx8 512Mb SDRAM FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply: Vdd/Vddq = 2.3V-3.6V IS42/45SxxxxxD - Vdd/Vddq = 3.3V IS42/45RxxxxxD - Vdd/Vddq = 2.5 • LVTTL interface • Prog	ISSI 矽成半导体	ISSI
IS45S16320D-6TLA1	16Mx32, 32Mx16, 64Mx8 512Mb SDRAM FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply: Vdd/Vddq = 2.3V-3.6V IS42/45SxxxxxD - Vdd/Vddq = 3.3V IS42/45RxxxxxD - Vdd/Vddq = 2.5 • LVTTL interface • Prog	ISSI 矽成半导体	ISSI
IS45S16320D-7BLA1	16Mx32, 32Mx16, 64Mx8 512Mb SDRAM FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply: Vdd/Vddq = 2.3V-3.6V IS42/45SxxxxxD - Vdd/Vddq = 3.3V IS42/45RxxxxxD - Vdd/Vddq = 2.5 • LVTTL interface • Prog	ISSI 矽成半导体	ISSI
IS45S16320D-7BLA2	16Mx32, 32Mx16, 64Mx8 512Mb SDRAM FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply: Vdd/Vddq = 2.3V-3.6V IS42/45SxxxxxD - Vdd/Vddq = 3.3V IS42/45RxxxxxD - Vdd/Vddq = 2.5 • LVTTL interface • Prog	ISSI 矽成半导体	ISSI
IS45S16320D-7CTLA1	16Mx32, 32Mx16, 64Mx8 512Mb SDRAM FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply: Vdd/Vddq = 2.3V-3.6V IS42/45SxxxxxD - Vdd/Vddq = 3.3V IS42/45RxxxxxD - Vdd/Vddq = 2.5 • LVTTL interface • Prog	ISSI 矽成半导体	ISSI
IS45S16320D-7CTLA2	16Mx32, 32Mx16, 64Mx8 512Mb SDRAM FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply: Vdd/Vddq = 2.3V-3.6V IS42/45SxxxxxD - Vdd/Vddq = 3.3V IS42/45RxxxxxD - Vdd/Vddq = 2.5 • LVTTL interface • Prog	ISSI 矽成半导体	ISSI
IS45S16320D-7TLA1	16Mx32, 32Mx16, 64Mx8 512Mb SDRAM FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply: Vdd/Vddq = 2.3V-3.6V IS42/45SxxxxxD - Vdd/Vddq = 3.3V IS42/45RxxxxxD - Vdd/Vddq = 2.5 • LVTTL interface • Prog	ISSI 矽成半导体	ISSI
IS45S16320D-7TLA2	16Mx32, 32Mx16, 64Mx8 512Mb SDRAM FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply: Vdd/Vddq = 2.3V-3.6V IS42/45SxxxxxD - Vdd/Vddq = 3.3V IS42/45RxxxxxD - Vdd/Vddq = 2.5 • LVTTL interface • Prog	ISSI 矽成半导体	ISSI
IS45S16800F	16Mx8, 8Mx16 128Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply Vdd Vddq IS42/45S81600F 3.3V 3.3V IS42/45S16800F 3.3V 3.3V • LVTTL interface • Programmable burst length – (1	ISSI 矽成半导体	ISSI
IS45S16800F-6BLA1	16Mx8, 8Mx16 128Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply Vdd Vddq IS42/45S81600F 3.3V 3.3V IS42/45S16800F 3.3V 3.3V • LVTTL interface • Programmable burst length – (1	ISSI 矽成半导体	ISSI
IS45S16800F-6CTLA1	16Mx8, 8Mx16 128Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply Vdd Vddq IS42/45S81600F 3.3V 3.3V IS42/45S16800F 3.3V 3.3V • LVTTL interface • Programmable burst length – (1	ISSI 矽成半导体	ISSI
IS45S16800F-6TLA1	16Mx8, 8Mx16 128Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply Vdd Vddq IS42/45S81600F 3.3V 3.3V IS42/45S16800F 3.3V 3.3V • LVTTL interface • Programmable burst length – (1	ISSI 矽成半导体	ISSI
IS45S16800F-6TLA2	16Mx8, 8Mx16 128Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply Vdd Vddq IS42/45S81600F 3.3V 3.3V IS42/45S16800F 3.3V 3.3V • LVTTL interface • Programmable burst length – (1	ISSI 矽成半导体	ISSI
IS45S16800F-7BLA1	16Mx8, 8Mx16 128Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply Vdd Vddq IS42/45S81600F 3.3V 3.3V IS42/45S16800F 3.3V 3.3V • LVTTL interface • Programmable burst length – (1	ISSI 矽成半导体	ISSI
IS45S16800F-7BLA2	16Mx8, 8Mx16 128Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply Vdd Vddq IS42/45S81600F 3.3V 3.3V IS42/45S16800F 3.3V 3.3V • LVTTL interface • Programmable burst length – (1	ISSI 矽成半导体	ISSI
IS45S16800F-7CTLA1	16Mx8, 8Mx16 128Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply Vdd Vddq IS42/45S81600F 3.3V 3.3V IS42/45S16800F 3.3V 3.3V • LVTTL interface • Programmable burst length – (1	ISSI 矽成半导体	ISSI
IS45S16800F-7CTLA2	16Mx8, 8Mx16 128Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply Vdd Vddq IS42/45S81600F 3.3V 3.3V IS42/45S16800F 3.3V 3.3V • LVTTL interface • Programmable burst length – (1	ISSI 矽成半导体	ISSI
IS45S16800F-7TLA1	16Mx8, 8Mx16 128Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply Vdd Vddq IS42/45S81600F 3.3V 3.3V IS42/45S16800F 3.3V 3.3V • LVTTL interface • Programmable burst length – (1	ISSI 矽成半导体	ISSI
IS45S16800F-7TLA2	16Mx8, 8Mx16 128Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply Vdd Vddq IS42/45S81600F 3.3V 3.3V IS42/45S16800F 3.3V 3.3V • LVTTL interface • Programmable burst length – (1	ISSI 矽成半导体	ISSI
IS45S16800J	16Mx8, 8Mx16 128Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply VDD & VDDQ: 3.3V • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burst	ISSI 矽成半导体	ISSI
IS45S16800J-6BLA1	16Mx8, 8Mx16 128Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply VDD & VDDQ: 3.3V • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burst	ISSI 矽成半导体	ISSI
IS45S16800J-6BLA2	16Mx8, 8Mx16 128Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply VDD & VDDQ: 3.3V • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burst	ISSI 矽成半导体	ISSI
IS45S16800J-6TLA1	16Mx8, 8Mx16 128Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply VDD & VDDQ: 3.3V • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burst	ISSI 矽成半导体	ISSI
IS45S16800J-6TLA2	16Mx8, 8Mx16 128Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply VDD & VDDQ: 3.3V • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burst	ISSI 矽成半导体	ISSI
IS45S16800J-7BLA1	16Mx8, 8Mx16 128Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply VDD & VDDQ: 3.3V • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burst	ISSI 矽成半导体	ISSI
IS45S16800J-7BLA2	16Mx8, 8Mx16 128Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply VDD & VDDQ: 3.3V • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burst	ISSI 矽成半导体	ISSI
IS45S16800J-7TLA1	16Mx8, 8Mx16 128Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply VDD & VDDQ: 3.3V • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burst	ISSI 矽成半导体	ISSI
IS45S16800J-7TLA2	16Mx8, 8Mx16 128Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply VDD & VDDQ: 3.3V • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burst	ISSI 矽成半导体	ISSI
IS45S32200E	512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM OVERVIEW ISSIs 64Mb Synchronous DRAM IS42/45S32200E is organized as 524,288 bits x 32-bit x 4-bank for improved performance. The synchronous DRAMs achieve high speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. GENERAL DES	ISSI 矽成半导体	ISSI
IS45S32200E-6BLA1	512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM OVERVIEW ISSIs 64Mb Synchronous DRAM IS42/45S32200E is organized as 524,288 bits x 32-bit x 4-bank for improved performance. The synchronous DRAMs achieve high speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. GENERAL DES	ISSI 矽成半导体	ISSI
IS45S32200E-6TLA1	512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM OVERVIEW ISSIs 64Mb Synchronous DRAM IS42/45S32200E is organized as 524,288 bits x 32-bit x 4-bank for improved performance. The synchronous DRAMs achieve high speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. GENERAL DES	ISSI 矽成半导体	ISSI

IS45S产品属性

类型
描述
型号
IS45S
制造商
IDEC Corporation
功能描述
SENS.IND. 10-30VDC PNP NC

IS45S供应商更多...

更新时间：2026-5-24 9:21:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市纳艾斯科技有限公司	IS45S32400E-7TL	ISSI	24+	TSOP56	80000	只做自己库存全新原装进口正品假一赔百可开13%增	询价
深圳市英卓尔科技有限公司	IS45S32400E-7TLA1	ISSI	20+	TSOP	2960	诚信交易大量库存现货	询价
深圳市纳立科技有限公司	IS45S32400E-7TLA1	ISSI	三年内		1983	只做原装正品	询价
深圳市柯尔基电子有限公司	IS45S32400E-7TLA1	ISSI	23+24	TSOP	29650	原装正品优势渠道价格合理.可开13%增值税发票	询价
深圳市能元时代电子有限公司	IS45S32400E-7TLA1	ISSI	23+	TSSOP	57952	##公司主营品牌长期供应100%原装现货可含税提供技术	询价
深圳市卓越微芯电子有限公司	IS45S32400E-7BA1	ISSI	25+	BGA90	3850	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市宇创芯科技有限公司	IS45S32400E-7TLA1	ISSI	24+	TSOP86	9600	原装现货,优势供应,支持实单!	询价
深圳市诺美思科技有限公司	IS45S32400E-7TLA1	ISSI		原厂封装	9800	原装进口公司现货假一赔百	询价
深圳市英科美电子有限公司	IS45S32400E-7TLA1	ISSI	2223+	TSOP86	26800	只做原装正品假一赔十为客户做到零风险	询价
深圳市凌旭科技有限公司	IS45S32400E-7TLA1	ISSI	2016+	TSSOP	4000	只做原装,假一罚十,公司可开17%增值税发票!	询价

IS45S芯片相关品牌

IS45S规格书下载地址

IS45S参数引脚图相关

IS45S数据表相关新闻

IS45S16320F-7BLA2
IS45S16320F-7BLA2
2023-4-4
IS43TR16640B-15GBLI-TR 动态随机存取存储器 1G, 1.5V, DDR3, 64Mx16, 1333MT/s @ 8-8-8, 96 ball BGA (9mm x13mm) RoHS, IT, T&R
原装正品现货只做原装
2022-3-30
IS43TR16640C-125JBLI 大量到货
IS43TR16640C-125JBLI 大量到货
2021-8-2
IS45S16160D-75ETLA1-TR
IS45S16160D-75ETLA1-TR IS43DR82560B-25EBL XC6SLX75-2FGG484I XC6223D181MR-G XC95108-20TQ100I XC6SLX16-3CSG225I CY7C433-20AXC XC6SLX45-2FGG484I LXCRP1C1BL1N LXCRN1C1CL1N XCR3512XL-12PQ208I XC6SLX45-3FGG676I XC7A100T-2CSG324I XC6SLX150T-3CSG484C XC6SLX16-3CSG225I XC7Z030-1FBG676C CY7C
2021-6-2
IS45VM16320D-75BLA1
IS45VM16320D-75BLA1
2021-6-2
IS43R16800E-5TL公司大量原装正品现货/随时可以发货
瀚佳科技(深圳)有限公司专业为工厂一站式BOM配单服务
2019-5-9

DdatasheetPDF页码索引

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IS45S芯片相关品牌

IS45S规格书下载地址

IS45S参数引脚图相关

IS45S数据表相关新闻

IS45S16320F-7BLA2

IS43TR16640B-15GBLI-TR 动态随机存取存储器 1G, 1.5V, DDR3, 64Mx16, 1333MT/s @ 8-8-8, 96 ball BGA (9mm x13mm) RoHS, IT, T&R

IS43TR16640C-125JBLI 大量到货

IS45S16160D-75ETLA1-TR

IS45VM16320D-75BLA1

IS43R16800E-5TL公司大量原装正品现货/随时可以发货

DdatasheetPDF页码索引