64M x 8, 32M x 16 512Mb SYNCHRONOUS DRAM

OVERVIEW ISSIs 512Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 512Mb SDRAM is organized as follows. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous;

64M x 8, 32M x 16 512Mb SYNCHRONOUS DRAM

OVERVIEW ISSIs 512Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 512Mb SDRAM is organized as follows. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous;

64M x 8, 32M x 16 512Mb SYNCHRONOUS DRAM

OVERVIEW ISSIs 512Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 512Mb SDRAM is organized as follows. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous;

封装/外壳：54-TFBGA 包装：托盘 描述：IC DRAM 512MBIT PARALLEL 54WBGA 集成电路（IC） 存储器

封装/外壳：54-TSOP（0.400"，10.16mm 宽） 包装：托盘 描述：IC DRAM 512MBIT PAR 54TSOP II 集成电路（IC） 存储器

Internal bank for hiding row access/precharge

文件：1.57364 Mbytes Page：66 Pages

8K refresh cycles every 64 ms

文件：1.71168 Mbytes Page：68 Pages