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IS45价格

参考价格：￥47.7338

型号：IS45S16160G-7CTLA1 品牌：ISSI 备注：这里有IS45多少钱，2026年最近7天走势，今日出价，今日竞价，IS45批发/采购报价，IS45行情走势销售排行榜，IS45报价。

型号	功能描述	生产厂家企业	LOGO
IS450	OPIC LIGHT DETECTOR WITH BULLT-IN SIGNAL PROCESSING CIRCULT FOR LIGHT MODULATION SYSTEM OPIC Light Detector with Built-In Signal Processing Circuit for Light Modulation System Applications 1. Optoelectronic switches 2. Copiers, printers, facsimiles	SHARPSharp Corporation 夏普	SHARP
IS455	LINEAR OUTPUT TYPE OPIC LIGHT DETECTOR ■ Features 1. Liner output 2. Two package according to mounting method Side-view type (IS445) Top-view type (IS455) 3. Capable of output voltage level adjustment due to external resistor ■ Applications 1. Copiers	SHARPSharp Corporation 夏普	SHARP
IS455	Linear Output Type OPIC Light Detector ■ Features 1. Liner output 2. Two package according to mounting method Side-view type (IS445) Top-view type (IS455) 3. Capable of output voltage level adjustment due to external resistor ■ Applications 1. Copiers	SHARPSharp Corporation 夏普	SHARP
IS456	High Speed Response Type OPIC Light Detector ■ Features 1. High speed response (t PHL : TYP.230ns ) 2. Uses a pattern to allow for possible positional deviation of the semiconductor laser spot. 3. Compact, mini-flat package ■ Applications 1. Laser beam printers	SHARPSharp Corporation 夏普	SHARP
IS457	High Speed Response Type OPIC Light Detector ■ Features 1. High speed response type (t PHL: TYP. 300ns) 2. Pattern with semiconductor laser spot positional deviation taken into consideration (Detector size : 0.5mm x 3.0mm ) 3. Open collector output 4. Angle adjustment by means of outer mounting resistance ■ Applications 1. Laser beam	SHARPSharp Corporation 夏普	SHARP
IS45RM16160K-6BLA1	4M x 16Bits x 4Banks Mobile Synchronous DRAM Features •JEDEC standard 3.3V, 2.5V, 1.8V power supply. •Auto refresh and self refresh. •All pins are compatible with LVCMOS interface. •8K refresh cycle / 64ms. •Programmable Burst Length and Burst Type. - 1, 2, 4, 8 or Full Page for Sequential Burst. - 4 or 8 for Interleave Burst. •Program	ISSI 矽成半导体	ISSI
IS45RM16160K-6BLA2	4M x 16Bits x 4Banks Mobile Synchronous DRAM Features •JEDEC standard 3.3V, 2.5V, 1.8V power supply. •Auto refresh and self refresh. •All pins are compatible with LVCMOS interface. •8K refresh cycle / 64ms. •Programmable Burst Length and Burst Type. - 1, 2, 4, 8 or Full Page for Sequential Burst. - 4 or 8 for Interleave Burst. •Program	ISSI 矽成半导体	ISSI
IS45RM16160K-75BLA1	4M x 16Bits x 4Banks Mobile Synchronous DRAM Features •JEDEC standard 3.3V, 2.5V, 1.8V power supply. •Auto refresh and self refresh. •All pins are compatible with LVCMOS interface. •8K refresh cycle / 64ms. •Programmable Burst Length and Burst Type. - 1, 2, 4, 8 or Full Page for Sequential Burst. - 4 or 8 for Interleave Burst. •Program	ISSI 矽成半导体	ISSI
IS45RM16160K-75BLA2	4M x 16Bits x 4Banks Mobile Synchronous DRAM Features •JEDEC standard 3.3V, 2.5V, 1.8V power supply. •Auto refresh and self refresh. •All pins are compatible with LVCMOS interface. •8K refresh cycle / 64ms. •Programmable Burst Length and Burst Type. - 1, 2, 4, 8 or Full Page for Sequential Burst. - 4 or 8 for Interleave Burst. •Program	ISSI 矽成半导体	ISSI
IS45RM16200D-6BLA1	1M x 16Bits x 2Banks Low Power Synchronous DRAM Features • JEDEC standard 3.3V, 2.5V, 1.8V power supply • Auto refresh and self refresh • All pins are compatible with LVCMOS interface • 4K refresh cycle / 64ms • Programmable Burst Length and Burst Type - 1, 2, 4, 8 or Full Page for Sequential Burst - 4 or 8 for Interleave Burst • Progra	ISSI 矽成半导体	ISSI
IS45RM16200D-75BLA1	1M x 16Bits x 2Banks Low Power Synchronous DRAM Features • JEDEC standard 3.3V, 2.5V, 1.8V power supply • Auto refresh and self refresh • All pins are compatible with LVCMOS interface • 4K refresh cycle / 64ms • Programmable Burst Length and Burst Type - 1, 2, 4, 8 or Full Page for Sequential Burst - 4 or 8 for Interleave Burst • Progra	ISSI 矽成半导体	ISSI
IS45RM16400M-6BLA1	1M x 16Bits x 4Banks Mobile Synchronous DRAM Features • JEDEC standard 3.3V, 2.5V, 1.8V power supply • Auto refresh and self refresh • All pins are compatible with LVCMOS interface • 4K refresh cycle / 64ms • Programmable Burst Length and Burst Type - 1, 2, 4, 8 or Full Page for Sequential Burst - 4 or 8 for Interleave Burst • Progra	ISSI 矽成半导体	ISSI
IS45RM16400M-75BLA1	1M x 16Bits x 4Banks Mobile Synchronous DRAM Features • JEDEC standard 3.3V, 2.5V, 1.8V power supply • Auto refresh and self refresh • All pins are compatible with LVCMOS interface • 4K refresh cycle / 64ms • Programmable Burst Length and Burst Type - 1, 2, 4, 8 or Full Page for Sequential Burst - 4 or 8 for Interleave Burst • Progra	ISSI 矽成半导体	ISSI
IS45RM16800H-6BLA1	2M x 16Bits x 4Banks Mobile Synchronous DRAM Features • JEDEC standard 3.3V, 2.5V, 1.8V power supply • Auto refresh and self refresh • All pins are compatible with LVCMOS interface • 4K refresh cycle / 64ms • Programmable Burst Length and Burst Type • 1, 2, 4, 8 or Full Page for Sequential Burst • 4 or 8 for Interleave Burst • Progra	ISSI 矽成半导体	ISSI
IS45S16160G	32Meg x 8, 16Meg x16 256Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 200,166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single Power supply: 3.3V + 0.3V • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burst	ISSI 矽成半导体	ISSI
IS45S16160G-6BLA1	32Meg x 8, 16Meg x16 256Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 200,166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single Power supply: 3.3V + 0.3V • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burst	ISSI 矽成半导体	ISSI
IS45S16160G-6BLA2	32Meg x 8, 16Meg x16 256Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 200,166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single Power supply: 3.3V + 0.3V • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burst	ISSI 矽成半导体	ISSI
IS45S16160G-6CTLA2	32Meg x 8, 16Meg x16 256Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 200,166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single Power supply: 3.3V + 0.3V • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burst	ISSI 矽成半导体	ISSI
IS45S16160G-6TLA1	32Meg x 8, 16Meg x16 256Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 200,166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single Power supply: 3.3V + 0.3V • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burst	ISSI 矽成半导体	ISSI
IS45S16160G-7BLA1	32Meg x 8, 16Meg x16 256Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 200,166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single Power supply: 3.3V + 0.3V • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burst	ISSI 矽成半导体	ISSI
IS45S16160G-7BLA2	32Meg x 8, 16Meg x16 256Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 200,166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single Power supply: 3.3V + 0.3V • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burst	ISSI 矽成半导体	ISSI
IS45S16160G-7CTLA1	32Meg x 8, 16Meg x16 256Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 200,166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single Power supply: 3.3V + 0.3V • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burst	ISSI 矽成半导体	ISSI
IS45S16160G-7CTLA2	32Meg x 8, 16Meg x16 256Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 200,166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single Power supply: 3.3V + 0.3V • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burst	ISSI 矽成半导体	ISSI
IS45S16160G-7TLA1	32Meg x 8, 16Meg x16 256Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 200,166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single Power supply: 3.3V + 0.3V • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burst	ISSI 矽成半导体	ISSI
IS45S16160G-7TLA2	32Meg x 8, 16Meg x16 256Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 200,166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single Power supply: 3.3V + 0.3V • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burst	ISSI 矽成半导体	ISSI
IS45S16160J	32Meg x 8, 16Meg x16 256Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single Power supply: 3.3V + 0.3V • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burs	ISSI 矽成半导体	ISSI
IS45S16160J-6BLA1	32Meg x 8, 16Meg x16 256Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single Power supply: 3.3V + 0.3V • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burs	ISSI 矽成半导体	ISSI
IS45S16160J-6BLA2	32Meg x 8, 16Meg x16 256Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single Power supply: 3.3V + 0.3V • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burs	ISSI 矽成半导体	ISSI
IS45S16160J-6CTLA2	32Meg x 8, 16Meg x16 256Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single Power supply: 3.3V + 0.3V • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burs	ISSI 矽成半导体	ISSI
IS45S16160J-6TLA1	32Meg x 8, 16Meg x16 256Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single Power supply: 3.3V + 0.3V • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burs	ISSI 矽成半导体	ISSI
IS45S16160J-6TLA2	32Meg x 8, 16Meg x16 256Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single Power supply: 3.3V + 0.3V • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burs	ISSI 矽成半导体	ISSI
IS45S16160J-7BLA1	32Meg x 8, 16Meg x16 256Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single Power supply: 3.3V + 0.3V • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burs	ISSI 矽成半导体	ISSI
IS45S16160J-7BLA2	32Meg x 8, 16Meg x16 256Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single Power supply: 3.3V + 0.3V • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burs	ISSI 矽成半导体	ISSI
IS45S16160J-7CTLA1	32Meg x 8, 16Meg x16 256Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single Power supply: 3.3V + 0.3V • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burs	ISSI 矽成半导体	ISSI
IS45S16160J-7CTLA2	32Meg x 8, 16Meg x16 256Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single Power supply: 3.3V + 0.3V • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burs	ISSI 矽成半导体	ISSI
IS45S16160J-7TLA1	32Meg x 8, 16Meg x16 256Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single Power supply: 3.3V + 0.3V • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burs	ISSI 矽成半导体	ISSI
IS45S16160J-7TLA2	32Meg x 8, 16Meg x16 256Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single Power supply: 3.3V + 0.3V • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burs	ISSI 矽成半导体	ISSI
IS45S16320B	64M x 8, 32M x 16 512Mb SYNCHRONOUS DRAM OVERVIEW ISSIs 512Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 512Mb SDRAM is organized as follows. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous;	ISSI 矽成半导体	ISSI
IS45S16320B-7BLA1	64M x 8, 32M x 16 512Mb SYNCHRONOUS DRAM OVERVIEW ISSIs 512Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 512Mb SDRAM is organized as follows. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous;	ISSI 矽成半导体	ISSI
IS45S16320B-7TLA1	64M x 8, 32M x 16 512Mb SYNCHRONOUS DRAM OVERVIEW ISSIs 512Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 512Mb SDRAM is organized as follows. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous;	ISSI 矽成半导体	ISSI
IS45S16320D-6BLA1	16Mx32, 32Mx16, 64Mx8 512Mb SDRAM FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply: Vdd/Vddq = 2.3V-3.6V IS42/45SxxxxxD - Vdd/Vddq = 3.3V IS42/45RxxxxxD - Vdd/Vddq = 2.5 • LVTTL interface • Prog	ISSI 矽成半导体	ISSI
IS45S16320D-6TLA1	16Mx32, 32Mx16, 64Mx8 512Mb SDRAM FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply: Vdd/Vddq = 2.3V-3.6V IS42/45SxxxxxD - Vdd/Vddq = 3.3V IS42/45RxxxxxD - Vdd/Vddq = 2.5 • LVTTL interface • Prog	ISSI 矽成半导体	ISSI
IS45S16320D-7BLA1	16Mx32, 32Mx16, 64Mx8 512Mb SDRAM FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply: Vdd/Vddq = 2.3V-3.6V IS42/45SxxxxxD - Vdd/Vddq = 3.3V IS42/45RxxxxxD - Vdd/Vddq = 2.5 • LVTTL interface • Prog	ISSI 矽成半导体	ISSI
IS45S16320D-7BLA2	16Mx32, 32Mx16, 64Mx8 512Mb SDRAM FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply: Vdd/Vddq = 2.3V-3.6V IS42/45SxxxxxD - Vdd/Vddq = 3.3V IS42/45RxxxxxD - Vdd/Vddq = 2.5 • LVTTL interface • Prog	ISSI 矽成半导体	ISSI
IS45S16320D-7CTLA1	16Mx32, 32Mx16, 64Mx8 512Mb SDRAM FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply: Vdd/Vddq = 2.3V-3.6V IS42/45SxxxxxD - Vdd/Vddq = 3.3V IS42/45RxxxxxD - Vdd/Vddq = 2.5 • LVTTL interface • Prog	ISSI 矽成半导体	ISSI
IS45S16320D-7CTLA2	16Mx32, 32Mx16, 64Mx8 512Mb SDRAM FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply: Vdd/Vddq = 2.3V-3.6V IS42/45SxxxxxD - Vdd/Vddq = 3.3V IS42/45RxxxxxD - Vdd/Vddq = 2.5 • LVTTL interface • Prog	ISSI 矽成半导体	ISSI
IS45S16320D-7TLA1	16Mx32, 32Mx16, 64Mx8 512Mb SDRAM FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply: Vdd/Vddq = 2.3V-3.6V IS42/45SxxxxxD - Vdd/Vddq = 3.3V IS42/45RxxxxxD - Vdd/Vddq = 2.5 • LVTTL interface • Prog	ISSI 矽成半导体	ISSI
IS45S16320D-7TLA2	16Mx32, 32Mx16, 64Mx8 512Mb SDRAM FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply: Vdd/Vddq = 2.3V-3.6V IS42/45SxxxxxD - Vdd/Vddq = 3.3V IS42/45RxxxxxD - Vdd/Vddq = 2.5 • LVTTL interface • Prog	ISSI 矽成半导体	ISSI
IS45S16800F	16Mx8, 8Mx16 128Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply Vdd Vddq IS42/45S81600F 3.3V 3.3V IS42/45S16800F 3.3V 3.3V • LVTTL interface • Programmable burst length – (1	ISSI 矽成半导体	ISSI
IS45S16800F-6BLA1	16Mx8, 8Mx16 128Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply Vdd Vddq IS42/45S81600F 3.3V 3.3V IS42/45S16800F 3.3V 3.3V • LVTTL interface • Programmable burst length – (1	ISSI 矽成半导体	ISSI
IS45S16800F-6CTLA1	16Mx8, 8Mx16 128Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply Vdd Vddq IS42/45S81600F 3.3V 3.3V IS42/45S16800F 3.3V 3.3V • LVTTL interface • Programmable burst length – (1	ISSI 矽成半导体	ISSI
IS45S16800F-6TLA1	16Mx8, 8Mx16 128Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply Vdd Vddq IS42/45S81600F 3.3V 3.3V IS42/45S16800F 3.3V 3.3V • LVTTL interface • Programmable burst length – (1	ISSI 矽成半导体	ISSI
IS45S16800F-6TLA2	16Mx8, 8Mx16 128Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply Vdd Vddq IS42/45S81600F 3.3V 3.3V IS42/45S16800F 3.3V 3.3V • LVTTL interface • Programmable burst length – (1	ISSI 矽成半导体	ISSI
IS45S16800F-7BLA1	16Mx8, 8Mx16 128Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply Vdd Vddq IS42/45S81600F 3.3V 3.3V IS42/45S16800F 3.3V 3.3V • LVTTL interface • Programmable burst length – (1	ISSI 矽成半导体	ISSI
IS45S16800F-7BLA2	16Mx8, 8Mx16 128Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply Vdd Vddq IS42/45S81600F 3.3V 3.3V IS42/45S16800F 3.3V 3.3V • LVTTL interface • Programmable burst length – (1	ISSI 矽成半导体	ISSI
IS45S16800F-7CTLA1	16Mx8, 8Mx16 128Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply Vdd Vddq IS42/45S81600F 3.3V 3.3V IS42/45S16800F 3.3V 3.3V • LVTTL interface • Programmable burst length – (1	ISSI 矽成半导体	ISSI
IS45S16800F-7CTLA2	16Mx8, 8Mx16 128Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply Vdd Vddq IS42/45S81600F 3.3V 3.3V IS42/45S16800F 3.3V 3.3V • LVTTL interface • Programmable burst length – (1	ISSI 矽成半导体	ISSI
IS45S16800F-7TLA1	16Mx8, 8Mx16 128Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply Vdd Vddq IS42/45S81600F 3.3V 3.3V IS42/45S16800F 3.3V 3.3V • LVTTL interface • Programmable burst length – (1	ISSI 矽成半导体	ISSI
IS45S16800F-7TLA2	16Mx8, 8Mx16 128Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply Vdd Vddq IS42/45S81600F 3.3V 3.3V IS42/45S16800F 3.3V 3.3V • LVTTL interface • Programmable burst length – (1	ISSI 矽成半导体	ISSI
IS45S32200E	512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM OVERVIEW ISSIs 64Mb Synchronous DRAM IS42/45S32200E is organized as 524,288 bits x 32-bit x 4-bank for improved performance. The synchronous DRAMs achieve high speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. GENERAL DES	ISSI 矽成半导体	ISSI

IS45产品属性

类型
描述
型号
IS45
制造商
IDEC Corporation
功能描述
SENS.IND. 10-30VDC PNP NC

IS45供应商更多...

更新时间：2026-3-12 19:52:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市威雅利发展有限公司	IS45R16160D-75BLA2	ISSI	1031+	BGA	1450	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市冠亿通科技有限公司	IS45S16100C1-7BLA1	ISSI, Integrated Silicon Solut			18500	全新原厂原装现货!受权代理!可送样可提供技术支持!	询价
深圳市星宇佳科技有限公司	IS45S16100C1-7BLA1	ISSI	11+	BGA	33043		询价
深圳市星辰微电科技有限公司	IS45RM16160K	ISSI	25+	BGA	4500	ISSI存储芯片在售	询价
深圳市毅创腾电子科技有限公司	IS45S16100C1-7BLA1	ISSI	23+	60-TFBGA(6.4x10.1)	73390	专业分销产品!原装正品!价格优势!	询价
标准国际(香港)有限公司	IS45S1600J-6CTLA2	IS45S1600J-6CTLA2	25+	3652	3652		询价
深圳市能元时代电子有限公司	IS45R16160D-75BLA2	ISSI	23+	BGA	12800	##公司主营品牌长期供应100%原装现货可含税提供技术	询价
深圳市勤思达科技有限公司	IS45R16160D-75BLA2	ISSI	24+	BGA	5000	全新原装正品,现货销售	询价
深圳市昊创电子有限公司	IS45R16160J-75BLA2	ISSI/矽成	1604	SDRAMAUTO-MOBILE/16MX16S	2335	原装香港现货真实库存。低价	询价
瀚佳科技(深圳)有限公司	IS45S16100C1-7BLA1	ISSI, Integrated Silicon Solut	24+	60-迷你型BGA(6.4x10.1)	56200	一级代理/放心采购	询价

IS45芯片相关品牌

IS45规格书下载地址

IS45参数引脚图相关

IS45数据表相关新闻

IS45S16320F-7BLA2
IS45S16320F-7BLA2
2023-4-4
IS43TR16640B-15GBLI-TR 动态随机存取存储器 1G, 1.5V, DDR3, 64Mx16, 1333MT/s @ 8-8-8, 96 ball BGA (9mm x13mm) RoHS, IT, T&R
原装正品现货只做原装
2022-3-30
IS43TR16640C-125JBLI 大量到货
IS43TR16640C-125JBLI 大量到货
2021-8-2
IS45S16160D-75ETLA1-TR
IS45S16160D-75ETLA1-TR IS43DR82560B-25EBL XC6SLX75-2FGG484I XC6223D181MR-G XC95108-20TQ100I XC6SLX16-3CSG225I CY7C433-20AXC XC6SLX45-2FGG484I LXCRP1C1BL1N LXCRN1C1CL1N XCR3512XL-12PQ208I XC6SLX45-3FGG676I XC7A100T-2CSG324I XC6SLX150T-3CSG484C XC6SLX16-3CSG225I XC7Z030-1FBG676C CY7C
2021-6-2
IS45VM16320D-75BLA1
IS45VM16320D-75BLA1
2021-6-2
IS43R16800E-5TL公司大量原装正品现货/随时可以发货
瀚佳科技(深圳)有限公司专业为工厂一站式BOM配单服务
2019-5-9

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IS45芯片相关品牌

IS45规格书下载地址

IS45参数引脚图相关

IS45数据表相关新闻

IS45S16320F-7BLA2

IS43TR16640B-15GBLI-TR 动态随机存取存储器 1G, 1.5V, DDR3, 64Mx16, 1333MT/s @ 8-8-8, 96 ball BGA (9mm x13mm) RoHS, IT, T&R

IS43TR16640C-125JBLI 大量到货

IS45S16160D-75ETLA1-TR

IS45VM16320D-75BLA1

IS43R16800E-5TL公司大量原装正品现货/随时可以发货

DdatasheetPDF页码索引