IS457资料使用说明书夏普货源供应商报价SHARP-IC资料网

找IC，尽在114IC

登录注册

芯片资料

芯片资料
丝印反查
库存查询
行业新闻
制造商
替换型号
晶体管

精确

位置：首页 > IC中文资料 > IS45

IS45价格

参考价格：￥47.7338

型号：IS45S16160G-7CTLA1 品牌：ISSI 备注：这里有IS45多少钱，2026年最近7天走势，今日出价，今日竞价，IS45批发/采购报价，IS45行情走势销售排行榜，IS45报价。

型号	功能描述	生产厂家企业	LOGO
IS450	OPIC LIGHT DETECTOR WITH BULLT-IN SIGNAL PROCESSING CIRCULT FOR LIGHT MODULATION SYSTEM OPIC Light Detector with Built-In Signal Processing Circuit for Light Modulation System Applications 1. Optoelectronic switches 2. Copiers, printers, facsimiles	SHARPSharp Corporation 夏普	SHARP
IS455	LINEAR OUTPUT TYPE OPIC LIGHT DETECTOR ■ Features 1. Liner output 2. Two package according to mounting method Side-view type (IS445) Top-view type (IS455) 3. Capable of output voltage level adjustment due to external resistor ■ Applications 1. Copiers	SHARPSharp Corporation 夏普	SHARP
IS455	Linear Output Type OPIC Light Detector ■ Features 1. Liner output 2. Two package according to mounting method Side-view type (IS445) Top-view type (IS455) 3. Capable of output voltage level adjustment due to external resistor ■ Applications 1. Copiers	SHARPSharp Corporation 夏普	SHARP
IS456	High Speed Response Type OPIC Light Detector ■ Features 1. High speed response (t PHL : TYP.230ns ) 2. Uses a pattern to allow for possible positional deviation of the semiconductor laser spot. 3. Compact, mini-flat package ■ Applications 1. Laser beam printers	SHARPSharp Corporation 夏普	SHARP
IS457	High Speed Response Type OPIC Light Detector ■ Features 1. High speed response type (t PHL: TYP. 300ns) 2. Pattern with semiconductor laser spot positional deviation taken into consideration (Detector size : 0.5mm x 3.0mm ) 3. Open collector output 4. Angle adjustment by means of outer mounting resistance ■ Applications 1. Laser beam	SHARPSharp Corporation 夏普	SHARP
IS45RM16160K-6BLA1	4M x 16Bits x 4Banks Mobile Synchronous DRAM Features •JEDEC standard 3.3V, 2.5V, 1.8V power supply. •Auto refresh and self refresh. •All pins are compatible with LVCMOS interface. •8K refresh cycle / 64ms. •Programmable Burst Length and Burst Type. - 1, 2, 4, 8 or Full Page for Sequential Burst. - 4 or 8 for Interleave Burst. •Program	ISSI 矽成半导体	ISSI
IS45RM16160K-6BLA2	4M x 16Bits x 4Banks Mobile Synchronous DRAM Features •JEDEC standard 3.3V, 2.5V, 1.8V power supply. •Auto refresh and self refresh. •All pins are compatible with LVCMOS interface. •8K refresh cycle / 64ms. •Programmable Burst Length and Burst Type. - 1, 2, 4, 8 or Full Page for Sequential Burst. - 4 or 8 for Interleave Burst. •Program	ISSI 矽成半导体	ISSI
IS45RM16160K-75BLA1	4M x 16Bits x 4Banks Mobile Synchronous DRAM Features •JEDEC standard 3.3V, 2.5V, 1.8V power supply. •Auto refresh and self refresh. •All pins are compatible with LVCMOS interface. •8K refresh cycle / 64ms. •Programmable Burst Length and Burst Type. - 1, 2, 4, 8 or Full Page for Sequential Burst. - 4 or 8 for Interleave Burst. •Program	ISSI 矽成半导体	ISSI
IS45RM16160K-75BLA2	4M x 16Bits x 4Banks Mobile Synchronous DRAM Features •JEDEC standard 3.3V, 2.5V, 1.8V power supply. •Auto refresh and self refresh. •All pins are compatible with LVCMOS interface. •8K refresh cycle / 64ms. •Programmable Burst Length and Burst Type. - 1, 2, 4, 8 or Full Page for Sequential Burst. - 4 or 8 for Interleave Burst. •Program	ISSI 矽成半导体	ISSI
IS45RM16200D-6BLA1	1M x 16Bits x 2Banks Low Power Synchronous DRAM Features • JEDEC standard 3.3V, 2.5V, 1.8V power supply • Auto refresh and self refresh • All pins are compatible with LVCMOS interface • 4K refresh cycle / 64ms • Programmable Burst Length and Burst Type - 1, 2, 4, 8 or Full Page for Sequential Burst - 4 or 8 for Interleave Burst • Progra	ISSI 矽成半导体	ISSI
IS45RM16200D-75BLA1	1M x 16Bits x 2Banks Low Power Synchronous DRAM Features • JEDEC standard 3.3V, 2.5V, 1.8V power supply • Auto refresh and self refresh • All pins are compatible with LVCMOS interface • 4K refresh cycle / 64ms • Programmable Burst Length and Burst Type - 1, 2, 4, 8 or Full Page for Sequential Burst - 4 or 8 for Interleave Burst • Progra	ISSI 矽成半导体	ISSI
IS45RM16400M-6BLA1	1M x 16Bits x 4Banks Mobile Synchronous DRAM Features • JEDEC standard 3.3V, 2.5V, 1.8V power supply • Auto refresh and self refresh • All pins are compatible with LVCMOS interface • 4K refresh cycle / 64ms • Programmable Burst Length and Burst Type - 1, 2, 4, 8 or Full Page for Sequential Burst - 4 or 8 for Interleave Burst • Progra	ISSI 矽成半导体	ISSI
IS45RM16400M-75BLA1	1M x 16Bits x 4Banks Mobile Synchronous DRAM Features • JEDEC standard 3.3V, 2.5V, 1.8V power supply • Auto refresh and self refresh • All pins are compatible with LVCMOS interface • 4K refresh cycle / 64ms • Programmable Burst Length and Burst Type - 1, 2, 4, 8 or Full Page for Sequential Burst - 4 or 8 for Interleave Burst • Progra	ISSI 矽成半导体	ISSI
IS45RM16800H-6BLA1	2M x 16Bits x 4Banks Mobile Synchronous DRAM Features • JEDEC standard 3.3V, 2.5V, 1.8V power supply • Auto refresh and self refresh • All pins are compatible with LVCMOS interface • 4K refresh cycle / 64ms • Programmable Burst Length and Burst Type • 1, 2, 4, 8 or Full Page for Sequential Burst • 4 or 8 for Interleave Burst • Progra	ISSI 矽成半导体	ISSI
IS45RM16800H-75BLA1	2M x 16Bits x 4Banks Mobile Synchronous DRAM Features • JEDEC standard 3.3V, 2.5V, 1.8V power supply • Auto refresh and self refresh • All pins are compatible with LVCMOS interface • 4K refresh cycle / 64ms • Programmable Burst Length and Burst Type • 1, 2, 4, 8 or Full Page for Sequential Burst • 4 or 8 for Interleave Burst • Progra	ISSI 矽成半导体	ISSI
IS45RM32100D-6BLA1	512K x 32Bits x 2Banks Low Power Synchronous DRAM Features • JEDEC standard 3.3V, 2.5V, 1.8V power supply. • Auto refresh and self refresh. • All pins are compatible with LVCMOS interface. • 4K refresh cycle / 64ms. • Programmable Burst Length and Burst Type. - 1, 2, 4, 8 or Full Page for Sequential Burst. - 4 or 8 for Interleave Burst. •	ISSI 矽成半导体	ISSI
IS45RM32100D-75BLA1	512K x 32Bits x 2Banks Low Power Synchronous DRAM Features • JEDEC standard 3.3V, 2.5V, 1.8V power supply. • Auto refresh and self refresh. • All pins are compatible with LVCMOS interface. • 4K refresh cycle / 64ms. • Programmable Burst Length and Burst Type. - 1, 2, 4, 8 or Full Page for Sequential Burst. - 4 or 8 for Interleave Burst. •	ISSI 矽成半导体	ISSI
IS45RM32200M-6BLA1	512K x 32Bits x 4Banks Mobile Synchronous DRAM Features • JEDEC standard 3.3V, 2.5V, 1.8V power supply • Auto refresh and self refresh • All pins are compatible with LVCMOS interface • 4K refresh cycle / 64ms • Programmable Burst Length and Burst Type - 1, 2, 4, 8 or Full Page for Sequential Burst - 4 or 8 for Interleave Burst • Progra	ISSI 矽成半导体	ISSI
IS45RM32200M-75BLA1	512K x 32Bits x 4Banks Mobile Synchronous DRAM Features • JEDEC standard 3.3V, 2.5V, 1.8V power supply • Auto refresh and self refresh • All pins are compatible with LVCMOS interface • 4K refresh cycle / 64ms • Programmable Burst Length and Burst Type - 1, 2, 4, 8 or Full Page for Sequential Burst - 4 or 8 for Interleave Burst • Progra	ISSI 矽成半导体	ISSI
IS45RM32400H-6BLA1	1M x 32Bits x 4Banks Mobile Synchronous DRAM Features • JEDEC standard 3.3V, 2.5V, 1.8V power supply • Auto refresh and self refresh • All pins are compatible with LVCMOS interface • 4K refresh cycle / 64ms • Programmable Burst Length and Burst Type • 1, 2, 4, 8 or Full Page for Sequential Burst • 4 or 8 for Interleave Burst • Progra	ISSI 矽成半导体	ISSI
IS45RM32400H-75BLA1	1M x 32Bits x 4Banks Mobile Synchronous DRAM Features • JEDEC standard 3.3V, 2.5V, 1.8V power supply • Auto refresh and self refresh • All pins are compatible with LVCMOS interface • 4K refresh cycle / 64ms • Programmable Burst Length and Burst Type • 1, 2, 4, 8 or Full Page for Sequential Burst • 4 or 8 for Interleave Burst • Progra	ISSI 矽成半导体	ISSI
IS45RM32800K-6BLA1	2M x 32Bits x 4Banks Mobile Synchronous DRAM Features • JEDEC standard 3.3V, 2.5V, 1.8V power supply. • Auto refresh and self refresh. • All pins are compatible with LVCMOS interface. • 4K refresh cycle every 16ms (A2 grade) or 64 ms (Industrial, A1 grade). • Programmable Burst Length and Burst Type. - 1, 2, 4, 8 or Full Page for Sequ	ISSI 矽成半导体	ISSI
IS45RM32800K-6BLA2	2M x 32Bits x 4Banks Mobile Synchronous DRAM Features • JEDEC standard 3.3V, 2.5V, 1.8V power supply. • Auto refresh and self refresh. • All pins are compatible with LVCMOS interface. • 4K refresh cycle every 16ms (A2 grade) or 64 ms (Industrial, A1 grade). • Programmable Burst Length and Burst Type. - 1, 2, 4, 8 or Full Page for Sequ	ISSI 矽成半导体	ISSI
IS45RM32800K-75BLA1	2M x 32Bits x 4Banks Mobile Synchronous DRAM Features • JEDEC standard 3.3V, 2.5V, 1.8V power supply. • Auto refresh and self refresh. • All pins are compatible with LVCMOS interface. • 4K refresh cycle every 16ms (A2 grade) or 64 ms (Industrial, A1 grade). • Programmable Burst Length and Burst Type. - 1, 2, 4, 8 or Full Page for Sequ	ISSI 矽成半导体	ISSI
IS45RM32800K-75BLA2	2M x 32Bits x 4Banks Mobile Synchronous DRAM Features • JEDEC standard 3.3V, 2.5V, 1.8V power supply. • Auto refresh and self refresh. • All pins are compatible with LVCMOS interface. • 4K refresh cycle every 16ms (A2 grade) or 64 ms (Industrial, A1 grade). • Programmable Burst Length and Burst Type. - 1, 2, 4, 8 or Full Page for Sequ	ISSI 矽成半导体	ISSI
IS45S16160G	32Meg x 8, 16Meg x16 256Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 200,166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single Power supply: 3.3V + 0.3V • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burst	ISSI 矽成半导体	ISSI
IS45S16160G-6BLA1	32Meg x 8, 16Meg x16 256Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 200,166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single Power supply: 3.3V + 0.3V • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burst	ISSI 矽成半导体	ISSI
IS45S16160G-6BLA2	32Meg x 8, 16Meg x16 256Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 200,166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single Power supply: 3.3V + 0.3V • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burst	ISSI 矽成半导体	ISSI
IS45S16160G-6CTLA2	32Meg x 8, 16Meg x16 256Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 200,166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single Power supply: 3.3V + 0.3V • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burst	ISSI 矽成半导体	ISSI
IS45S16160G-6TLA1	32Meg x 8, 16Meg x16 256Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 200,166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single Power supply: 3.3V + 0.3V • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burst	ISSI 矽成半导体	ISSI
IS45S16160G-7BLA1	32Meg x 8, 16Meg x16 256Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 200,166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single Power supply: 3.3V + 0.3V • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burst	ISSI 矽成半导体	ISSI
IS45S16160G-7BLA2	32Meg x 8, 16Meg x16 256Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 200,166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single Power supply: 3.3V + 0.3V • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burst	ISSI 矽成半导体	ISSI
IS45S16160G-7CTLA1	32Meg x 8, 16Meg x16 256Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 200,166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single Power supply: 3.3V + 0.3V • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burst	ISSI 矽成半导体	ISSI
IS45S16160G-7CTLA2	32Meg x 8, 16Meg x16 256Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 200,166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single Power supply: 3.3V + 0.3V • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burst	ISSI 矽成半导体	ISSI
IS45S16160G-7TLA1	32Meg x 8, 16Meg x16 256Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 200,166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single Power supply: 3.3V + 0.3V • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burst	ISSI 矽成半导体	ISSI
IS45S16160G-7TLA2	32Meg x 8, 16Meg x16 256Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 200,166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single Power supply: 3.3V + 0.3V • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burst	ISSI 矽成半导体	ISSI
IS45S16160J	32Meg x 8, 16Meg x16 256Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single Power supply: 3.3V + 0.3V • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burs	ISSI 矽成半导体	ISSI
IS45S16160J-6BLA1	32Meg x 8, 16Meg x16 256Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single Power supply: 3.3V + 0.3V • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burs	ISSI 矽成半导体	ISSI
IS45S16160J-6BLA2	32Meg x 8, 16Meg x16 256Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single Power supply: 3.3V + 0.3V • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burs	ISSI 矽成半导体	ISSI
IS45S16160J-6CTLA2	32Meg x 8, 16Meg x16 256Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single Power supply: 3.3V + 0.3V • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burs	ISSI 矽成半导体	ISSI
IS45S16160J-6TLA1	32Meg x 8, 16Meg x16 256Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single Power supply: 3.3V + 0.3V • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burs	ISSI 矽成半导体	ISSI
IS45S16160J-6TLA2	32Meg x 8, 16Meg x16 256Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single Power supply: 3.3V + 0.3V • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burs	ISSI 矽成半导体	ISSI
IS45S16160J-7BLA1	32Meg x 8, 16Meg x16 256Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single Power supply: 3.3V + 0.3V • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burs	ISSI 矽成半导体	ISSI
IS45S16160J-7BLA2	32Meg x 8, 16Meg x16 256Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single Power supply: 3.3V + 0.3V • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burs	ISSI 矽成半导体	ISSI
IS45S16160J-7CTLA1	32Meg x 8, 16Meg x16 256Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single Power supply: 3.3V + 0.3V • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burs	ISSI 矽成半导体	ISSI
IS45S16160J-7CTLA2	32Meg x 8, 16Meg x16 256Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single Power supply: 3.3V + 0.3V • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burs	ISSI 矽成半导体	ISSI
IS45S16160J-7TLA1	32Meg x 8, 16Meg x16 256Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single Power supply: 3.3V + 0.3V • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burs	ISSI 矽成半导体	ISSI
IS45S16160J-7TLA2	32Meg x 8, 16Meg x16 256Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single Power supply: 3.3V + 0.3V • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burs	ISSI 矽成半导体	ISSI
IS45S16320B	64M x 8, 32M x 16 512Mb SYNCHRONOUS DRAM OVERVIEW ISSIs 512Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 512Mb SDRAM is organized as follows. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous;	ISSI 矽成半导体	ISSI
IS45S16320B-7BLA1	64M x 8, 32M x 16 512Mb SYNCHRONOUS DRAM OVERVIEW ISSIs 512Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 512Mb SDRAM is organized as follows. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous;	ISSI 矽成半导体	ISSI
IS45S16320B-7TLA1	64M x 8, 32M x 16 512Mb SYNCHRONOUS DRAM OVERVIEW ISSIs 512Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 512Mb SDRAM is organized as follows. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous;	ISSI 矽成半导体	ISSI
IS45S16320D-6BLA1	16Mx32, 32Mx16, 64Mx8 512Mb SDRAM FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply: Vdd/Vddq = 2.3V-3.6V IS42/45SxxxxxD - Vdd/Vddq = 3.3V IS42/45RxxxxxD - Vdd/Vddq = 2.5 • LVTTL interface • Prog	ISSI 矽成半导体	ISSI
IS45S16320D-6TLA1	16Mx32, 32Mx16, 64Mx8 512Mb SDRAM FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply: Vdd/Vddq = 2.3V-3.6V IS42/45SxxxxxD - Vdd/Vddq = 3.3V IS42/45RxxxxxD - Vdd/Vddq = 2.5 • LVTTL interface • Prog	ISSI 矽成半导体	ISSI
IS45S16320D-7BLA1	16Mx32, 32Mx16, 64Mx8 512Mb SDRAM FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply: Vdd/Vddq = 2.3V-3.6V IS42/45SxxxxxD - Vdd/Vddq = 3.3V IS42/45RxxxxxD - Vdd/Vddq = 2.5 • LVTTL interface • Prog	ISSI 矽成半导体	ISSI
IS45S16320D-7BLA2	16Mx32, 32Mx16, 64Mx8 512Mb SDRAM FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply: Vdd/Vddq = 2.3V-3.6V IS42/45SxxxxxD - Vdd/Vddq = 3.3V IS42/45RxxxxxD - Vdd/Vddq = 2.5 • LVTTL interface • Prog	ISSI 矽成半导体	ISSI
IS45S16320D-7CTLA1	16Mx32, 32Mx16, 64Mx8 512Mb SDRAM FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply: Vdd/Vddq = 2.3V-3.6V IS42/45SxxxxxD - Vdd/Vddq = 3.3V IS42/45RxxxxxD - Vdd/Vddq = 2.5 • LVTTL interface • Prog	ISSI 矽成半导体	ISSI
IS45S16320D-7CTLA2	16Mx32, 32Mx16, 64Mx8 512Mb SDRAM FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply: Vdd/Vddq = 2.3V-3.6V IS42/45SxxxxxD - Vdd/Vddq = 3.3V IS42/45RxxxxxD - Vdd/Vddq = 2.5 • LVTTL interface • Prog	ISSI 矽成半导体	ISSI
IS45S16320D-7TLA1	16Mx32, 32Mx16, 64Mx8 512Mb SDRAM FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply: Vdd/Vddq = 2.3V-3.6V IS42/45SxxxxxD - Vdd/Vddq = 3.3V IS42/45RxxxxxD - Vdd/Vddq = 2.5 • LVTTL interface • Prog	ISSI 矽成半导体	ISSI
IS45S16320D-7TLA2	16Mx32, 32Mx16, 64Mx8 512Mb SDRAM FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply: Vdd/Vddq = 2.3V-3.6V IS42/45SxxxxxD - Vdd/Vddq = 3.3V IS42/45RxxxxxD - Vdd/Vddq = 2.5 • LVTTL interface • Prog	ISSI 矽成半导体	ISSI
IS45S16800F	16Mx8, 8Mx16 128Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply Vdd Vddq IS42/45S81600F 3.3V 3.3V IS42/45S16800F 3.3V 3.3V • LVTTL interface • Programmable burst length – (1	ISSI 矽成半导体	ISSI

IS45产品属性

类型
描述
存储器格式：
DRAM
技术：
SDRAM - 移动
存储容量：
128Mb （8M x 16）
时钟频率：
133MHz
访问时间：
5.4ns
存储器接口：
并联
电压 - 电源：
1.7V ~ 1.95V
工作温度：
-40°C ~ 85°C（TA）
安装类型：
表面贴装
封装/外壳：
54-TFBGA
供应商器件封装：
54-TFBGA（8x8）

IS45芯片相关品牌

IS45规格书下载地址

IS45参数引脚图相关

IS45数据表相关新闻

IS45S16320F-7BLA2
IS45S16320F-7BLA2
2023-4-4
IS43TR16640B-15GBLI-TR 动态随机存取存储器 1G, 1.5V, DDR3, 64Mx16, 1333MT/s @ 8-8-8, 96 ball BGA (9mm x13mm) RoHS, IT, T&R
原装正品现货只做原装
2022-3-30
IS43TR16640C-125JBLI 大量到货
IS43TR16640C-125JBLI 大量到货
2021-8-2
IS45S16160D-75ETLA1-TR
IS45S16160D-75ETLA1-TR IS43DR82560B-25EBL XC6SLX75-2FGG484I XC6223D181MR-G XC95108-20TQ100I XC6SLX16-3CSG225I CY7C433-20AXC XC6SLX45-2FGG484I LXCRP1C1BL1N LXCRN1C1CL1N XCR3512XL-12PQ208I XC6SLX45-3FGG676I XC7A100T-2CSG324I XC6SLX150T-3CSG484C XC6SLX16-3CSG225I XC7Z030-1FBG676C CY7C
2021-6-2
IS45VM16320D-75BLA1
IS45VM16320D-75BLA1
2021-6-2
IS43R16800E-5TL公司大量原装正品现货/随时可以发货
瀚佳科技(深圳)有限公司专业为工厂一站式BOM配单服务
2019-5-9

DdatasheetPDF页码索引

P1
P2
P3
P4
P5
P6
P7
P8
P9
P10
P11
P12
P13
P14
P15
P16
P17
P18
P19
P20
P21
P22
P23
P24
P25
P26
P27
P28
P29
P30
P31
P32
P33
P34
P35
P36
P37
P38
P39
P40
P41
P42
P43
P44
P45
P46
P47
P48
P49
P50
P51
P52
P53
P54
P55
P56
P57
P58
P59
P60
P61
P62
P63
P64
P65
P66
P67
P68
P69
P70
P71
P72
P73
P74
P75
P76
P77
P78
P79
P80
P81
P82
P83
P84
P85
P86
P87
P88
P89
P90
P91
P92
P93
P94
P95
P96
P97
P98
P99
P100
P101
P102
P103
P104
P105
P106
P107
P108
P109
P110

找IC，尽在114IC

IS45价格

IS45产品属性

IS45芯片相关品牌

IS45规格书下载地址

IS45参数引脚图相关

IS45数据表相关新闻

IS45S16320F-7BLA2

IS43TR16640B-15GBLI-TR 动态随机存取存储器 1G, 1.5V, DDR3, 64Mx16, 1333MT/s @ 8-8-8, 96 ball BGA (9mm x13mm) RoHS, IT, T&R

IS43TR16640C-125JBLI 大量到货

IS45S16160D-75ETLA1-TR

IS45VM16320D-75BLA1

IS43R16800E-5TL公司大量原装正品现货/随时可以发货

DdatasheetPDF页码索引