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位置：首页 > IC中文资料 > IS43TR16640ED

型号 功能描述 生产厂家 企业 LOGO 操作
IS43TR16640ED

128MX8, 64MX16 1Gb DDR3 SDRAM WITH ECC

FEATURES  Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  High speed data transfer rates with system frequency up to 800 MHz  8 internal banks for concurrent operation  8n-bit pre-fetch architecture  Programmable CAS Latency  Programmable Additive Latency: 0, CL-1,CL-2  Programmable

ISSI

矽成半导体

IS43TR16640ED

DDR3 SDRAM w/ ECC

ISSI

矽成半导体

IS43TR16640ED-125KBLI

128MX8, 64MX16 1Gb DDR3 SDRAM WITH ECC

FEATURES  Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  High speed data transfer rates with system frequency up to 800 MHz  8 internal banks for concurrent operation  8n-bit pre-fetch architecture  Programmable CAS Latency  Programmable Additive Latency: 0, CL-1,CL-2  Programmable

ISSI

矽成半导体

IS43TR16640ED-15HBLI

128MX8, 64MX16 1Gb DDR3 SDRAM WITH ECC

FEATURES  Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  High speed data transfer rates with system frequency up to 800 MHz  8 internal banks for concurrent operation  8n-bit pre-fetch architecture  Programmable CAS Latency  Programmable Additive Latency: 0, CL-1,CL-2  Programmable

ISSI

矽成半导体

IS43TR16640ED-125KBLI

128MX8, 64MX16 1Gb DDR3 SDRAM WITH ECC

文件：3.3993 Mbytes Page：74 Pages

ISSI

矽成半导体

IS43TR16640ED-15HBLI

128MX8, 64MX16 1Gb DDR3 SDRAM WITH ECC

文件：3.3993 Mbytes Page：74 Pages

ISSI

矽成半导体

IS43TR16640A

128MX8, 64MX16 1Gb DDR3 SDRAM

FEATURES ● Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V ● High speed data transfer rates with system frequency up to 933 MHz ● 8 internal banks for concurrent operation ● 8Bits pre-fetch architecture ● Programmable CAS Latency: 5

ISSI

矽成半导体

IS43TR16640C

128MX8, 64MX16 1Gb DDR3 SDRAM

FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V • Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V • High speed data transfer rates with system frequency up to 1066 MHz • 8 internal banks for concurrent operation • 8n-bit pre-fetch architecture

ISSI

矽成半导体

IS43TR16640CL

128MX8, 64MX16 1Gb DDR3 SDRAM

FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V • Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V • High speed data transfer rates with system frequency up to 1066 MHz • 8 internal banks for concurrent operation • 8n-bit pre-fetch architecture

ISSI

矽成半导体

IS43TR16640B

Programmable CAS Latency

文件：3.89952 Mbytes Page：88 Pages

ISSI

矽成半导体

IS43TR16640BL

Programmable CAS Latency

文件：3.89952 Mbytes Page：88 Pages

ISSI

矽成半导体

IS43TR16640ED供应商更多...

更新时间：2026-1-2 8:39:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
讯运(深圳/上海)电子有限公司
IS43TR81024B-125KBLI
ISSI(美国芯成)
2021+
TWBGA-78(10x14)
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深圳和润天下电子科技有限公司
IS43TR16K01S2AL-125KBL
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FBGA
644
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深圳市高捷芯城科技有限公司
IS43TR81024B-125KBLI
ISSI(美国芯成)
24+
TWBGA78(10x14)
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
询价
深圳市亿智腾科技有限公司
IS43TR16K01S2AL-125KBL
ISSI/矽成
10
DDR3L SDRAM / 1GX16 DDR3L / FB
1949
询价
深圳市华睿芯科技有限公司
IS43TR16640ED-125KBLI-TR
ISSI
24+
FBGA-96
3685
原厂原装正品现货,代理渠道,支持订货!!!
询价
深圳市冠亿通科技有限公司
IS43TR16K01S2AL-125KBL
ISSI,
25+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
询价
深圳市中联芯电子有限公司
IS43TR81024B-125KBLI
ISSI
24+
BGA78
9000
只做原装正品 有挂有货 假一赔十
询价
艾睿（深圳）半导体有限公司
IS43TR81024B-125KBLI
ISSI(美国芯成)
2447
TWBGA-78(10x14)
315000
136个/托盘一级代理专营品牌!原装正品,优势现货,长
询价
深圳市能元时代电子有限公司
IS43TR81024B-125KBLI
ISSI
23+
BGA78
12800
##公司主营品牌长期供应100%原装现货可含税提供技术
询价
深圳市威雅利发展有限公司
IS43TR81024B-125KBLI
ISSI
21+
BGA78
2360
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价

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