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位置：首页 > IC中文资料 > IS43TR16640C

型号 功能描述 生产厂家 企业 LOGO 操作
IS43TR16640C

128MX8, 64MX16 1Gb DDR3 SDRAM

FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V • Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V • High speed data transfer rates with system frequency up to 1066 MHz • 8 internal banks for concurrent operation • 8n-bit pre-fetch architecture

ISSI

矽成半导体

IS43TR16640C

1.5V DDR3 SDRAM

ISSI

矽成半导体

IS43TR16640C-107MBL

128MX8, 64MX16 1Gb DDR3 SDRAM

FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V • Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V • High speed data transfer rates with system frequency up to 1066 MHz • 8 internal banks for concurrent operation • 8n-bit pre-fetch architecture

ISSI

矽成半导体

IS43TR16640C-107MBLI

128MX8, 64MX16 1Gb DDR3 SDRAM

FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V • Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V • High speed data transfer rates with system frequency up to 1066 MHz • 8 internal banks for concurrent operation • 8n-bit pre-fetch architecture

ISSI

矽成半导体

IS43TR16640C-125JBL

128MX8, 64MX16 1Gb DDR3 SDRAM

FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V • Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V • High speed data transfer rates with system frequency up to 1066 MHz • 8 internal banks for concurrent operation • 8n-bit pre-fetch architecture

ISSI

矽成半导体

IS43TR16640C-125JBLI

128MX8, 64MX16 1Gb DDR3 SDRAM

FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V • Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V • High speed data transfer rates with system frequency up to 1066 MHz • 8 internal banks for concurrent operation • 8n-bit pre-fetch architecture

ISSI

矽成半导体

IS43TR16640CL

128MX8, 64MX16 1Gb DDR3 SDRAM

FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V • Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V • High speed data transfer rates with system frequency up to 1066 MHz • 8 internal banks for concurrent operation • 8n-bit pre-fetch architecture

ISSI

矽成半导体

IS43TR16640CL-107MBL

128MX8, 64MX16 1Gb DDR3 SDRAM

FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V • Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V • High speed data transfer rates with system frequency up to 1066 MHz • 8 internal banks for concurrent operation • 8n-bit pre-fetch architecture

ISSI

矽成半导体

IS43TR16640CL-107MBLI

128MX8, 64MX16 1Gb DDR3 SDRAM

FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V • Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V • High speed data transfer rates with system frequency up to 1066 MHz • 8 internal banks for concurrent operation • 8n-bit pre-fetch architecture

ISSI

矽成半导体

IS43TR16640CL-125JBL

128MX8, 64MX16 1Gb DDR3 SDRAM

FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V • Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V • High speed data transfer rates with system frequency up to 1066 MHz • 8 internal banks for concurrent operation • 8n-bit pre-fetch architecture

ISSI

矽成半导体

IS43TR16640CL-125JBLI

128MX8, 64MX16 1Gb DDR3 SDRAM

FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V • Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V • High speed data transfer rates with system frequency up to 1066 MHz • 8 internal banks for concurrent operation • 8n-bit pre-fetch architecture

ISSI

矽成半导体

IS43TR16640C-125JBL

封装/外壳：96-TFBGA 包装：托盘 描述：IC DRAM 1GBIT PARALLEL 96TWBGA 集成电路（IC） 存储器

ETC

知名厂家

IS43TR16640C-125JBLI

封装/外壳：96-TFBGA 包装：托盘 描述：IC DRAM 1GBIT PARALLEL 96TWBGA 集成电路（IC） 存储器

ETC

知名厂家

IS43TR16640CL

1.35V DDR3L SDRAM

ISSI

矽成半导体

IS43TR16640A

128MX8, 64MX16 1Gb DDR3 SDRAM

FEATURES ● Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V ● High speed data transfer rates with system frequency up to 933 MHz ● 8 internal banks for concurrent operation ● 8Bits pre-fetch architecture ● Programmable CAS Latency: 5

ISSI

矽成半导体

IS43TR16640B

Programmable CAS Latency

文件：3.89952 Mbytes Page：88 Pages

ISSI

矽成半导体

IS43TR16640BL

Programmable CAS Latency

文件：3.89952 Mbytes Page：88 Pages

ISSI

矽成半导体

IS43TR16640C供应商更多...

更新时间：2025-12-13 15:15:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市中联芯电子有限公司
IS43TR16640C-125JBLI
ISSI
24+
BGA96
5600
原装正品,深圳现货,假一赔百
询价
讯运(深圳/上海)电子有限公司
IS43TR16640C-125JBLI
ISSI(美国芯成)
2021+
TWBGA-96(9x13)
2275
询价
深圳市博科胜电子有限公司
IS43TR16640C-107MBLI
ISSI
22+
FBGA96
8900
全新正品现货 有挂就有现货
询价
深圳市得捷芯城科技有限公司
IS43TR16640C-125JBLI
ISSI(美国芯成)
24+
TWBGA-96(9x13)
12398
原厂可订货,技术支持,直接渠道。可签保供合同
询价
深圳市明嘉莱科技有限公司
IS43TR16640C-125JBLI
ISSI
25+
SMD
518000
明嘉莱只做原装正品现货
询价
艾睿（深圳）半导体有限公司
IS43TR16640C-125JBLI
ISSI(美国芯成)
2447
TWBGA-96(9x13)
315000
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
深圳市安富世纪电子有限公司
IS43TR16640C-125JBLI-TR
ISSI
23+
BGA96
70000
专注配单,只做原装进口现货
询价
天津市博通航睿技术有限公司
IS43TR16640CL-125JBLI
ISSI
2
询价
万三科技(深圳)有限公司
IS43TR16640CL-107MBL
ISSI(美国芯成)
25+
TWBGA-96(9x13)
500000
源自原厂成本,高价回收工厂呆滞
询价
深圳市天芯威科技有限公司
IS43TR16640CL-125JBLI
ISSI
24+
n/a
25836
新到现货,只做原装进口
询价

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