Programmable CAS Latency

文件：3.89952 Mbytes Page：88 Pages

1.5V DDR3 SDRAM

封装/外壳：96-TFBGA 包装：散装 描述：IC DRAM 1GBIT PARALLEL 96TWBGA 集成电路（IC） 存储器

封装/外壳：96-TFBGA 包装：卷带（TR） 描述：IC DRAM 1GBIT PARALLEL 96TWBGA 集成电路（IC） 存储器

1.35V DDR3L SDRAM

Programmable CAS Latency

文件：3.89952 Mbytes Page：88 Pages

128MX8, 64MX16 1Gb DDR3 SDRAM

FEATURES ● Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V ● High speed data transfer rates with system frequency up to 933 MHz ● 8 internal banks for concurrent operation ● 8Bits pre-fetch architecture ● Programmable CAS Latency: 5

128MX8, 64MX16 1Gb DDR3 SDRAM

FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V • Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V • High speed data transfer rates with system frequency up to 1066 MHz • 8 internal banks for concurrent operation • 8n-bit pre-fetch architecture

128MX8, 64MX16 1Gb DDR3 SDRAM

FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V • Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V • High speed data transfer rates with system frequency up to 1066 MHz • 8 internal banks for concurrent operation • 8n-bit pre-fetch architecture