IRLZ14价格

参考价格:¥1.6489

型号:IRLZ14PBF 品牌:Vishay 备注:这里有IRLZ14多少钱,2025年最近7天走势,今日出价,今日竞价,IRLZ14批发/采购报价,IRLZ14行情走势销售排行榜,IRLZ14报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRLZ14

Power MOSFET(Vdss=60V, Rds(on)=0.20ohm, Id=10A)

Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

IRLZ14

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipati

VishayVishay Siliconix

威世威世科技公司

IRLZ14

Power MOSFET

FEATURES • Dynamic dV/dt rating • Logic-level gate drive • RDS(on) specified at VGS = 4 V and 5 V • 175 °C operating temperature • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

VishayVishay Siliconix

威世威世科技公司

IRLZ14

Power MOSFET

文件:1.08982 Mbytes Page:9 Pages

VishayVishay Siliconix

威世威世科技公司

IRLZ14

Power MOSFET

文件:1.08982 Mbytes Page:9 Pages

VishayVishay Siliconix

威世威世科技公司

IRLZ14

Power MOSFET

文件:1.16541 Mbytes Page:9 Pages

VishayVishay Siliconix

威世威世科技公司

IRLZ14

Power MOSFET

VishayVishay Siliconix

威世威世科技公司

IRLZ14

Power MOSFET(Vdss=60V, Rds(on)=0.20ohm, Id=10A)

Infineon

英飞凌

Power MOSFET

FEATURES • Dynamic dV/dt rating • Logic-level gate drive • RDS(on) specified at VGS = 4 V and 5 V • 175 °C operating temperature • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extermely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit

VishayVishay Siliconix

威世威世科技公司

Power MOSFET(Vdss=60V, Rds(on)=0.20ohm, Id=10A)

Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipati

VishayVishay Siliconix

威世威世科技公司

HEXFET Power MOSFET

DESCRIPTION Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power

IRF

Power MOSFET(Vdss=60V, Rds(on)=0.20ohm, Id=10A)

Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extermely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Advanced process technology • Surface-mount • 175 °C operating temperature • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoHS-compliant and / or par

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Advanced process technology • Surface-mount • 175 °C operating temperature • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoHS-compliant and / or par

VishayVishay Siliconix

威世威世科技公司

Power MOSFET(Vdss=60V, Rds(on)=0.20ohm, Id=10A)

Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extermely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extermely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extermely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:1.08982 Mbytes Page:9 Pages

VishayVishay Siliconix

威世威世科技公司

isc N-Channel MOSFET Transistor

文件:280.48 Kbytes Page:2 Pages

ISC

无锡固电

Power MOSFET

文件:317.61 Kbytes Page:9 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:317.61 Kbytes Page:9 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:1.08982 Mbytes Page:9 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:1.16541 Mbytes Page:9 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:317.61 Kbytes Page:9 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:317.61 Kbytes Page:9 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:317.61 Kbytes Page:9 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:396.23 Kbytes Page:11 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:396.23 Kbytes Page:11 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:317.61 Kbytes Page:9 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:396.23 Kbytes Page:11 Pages

VishayVishay Siliconix

威世威世科技公司

IRLZ14产品属性

  • 类型

    描述

  • 型号

    IRLZ14

  • 功能描述

    MOSFET N-Chan 60V 10 Amp

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-11-20 16:08:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
24+
TO-220
4500
只做原装正品现货 欢迎来电查询15919825718
IR
NEW
TO-220
35890
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
Vishay Siliconix
22+
TO2203
9000
原厂渠道,现货配单
IR
23+
TO-220
8560
受权代理!全新原装现货特价热卖!
IR
24+
NA/
1980
优势代理渠道,原装正品,可全系列订货开增值税票
VISHAY(威世)
24+
TO-263
8357
支持大陆交货,美金交易。原装现货库存。
IR
2447
TO-220
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
IR
23+
TO220
8000
只做原装现货
IR
23+
TO220
7000
IR
2023+
TO-220
5800
进口原装,现货热卖

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