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位置：首页 > IC中文资料第4136页 > IRLZ14

IRLZ14价格

参考价格：￥1.6489

型号：IRLZ14PBF 品牌：Vishay 备注：这里有IRLZ14多少钱，2026年最近7天走势，今日出价，今日竞价，IRLZ14批发/采购报价，IRLZ14行情走势销售排行榜，IRLZ14报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRLZ14

Power MOSFET(Vdss=60V, Rds(on)=0.20ohm, Id=10A)

Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

IRLZ14

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipati

VISHAYVishay Siliconix

威世威世科技公司

IRLZ14

Power MOSFET

FEATURES • Dynamic dV/dt rating • Logic-level gate drive • RDS(on) specified at VGS = 4 V and 5 V • 175 °C operating temperature • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

VISHAYVishay Siliconix

威世威世科技公司

IRLZ14

Power MOSFET

文件：1.08982 Mbytes Page：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRLZ14

Power MOSFET

文件：1.08982 Mbytes Page：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRLZ14

Power MOSFET

文件：1.16541 Mbytes Page：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRLZ14

Power MOSFET

VISHAYVishay Siliconix

威世威世科技公司

IRLZ14

Power MOSFET(Vdss=60V, Rds(on)=0.20ohm, Id=10A)

INFINEON

英飞凌

IRLZ14_V01

Power MOSFET

FEATURES • Dynamic dV/dt rating • Logic-level gate drive • RDS(on) specified at VGS = 4 V and 5 V • 175 °C operating temperature • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

VISHAYVishay Siliconix

威世威世科技公司

IRLZ14L

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extermely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit

VISHAYVishay Siliconix

威世威世科技公司

IRLZ14L

Power MOSFET(Vdss=60V, Rds(on)=0.20ohm, Id=10A)

Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

IRLZ14PBF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipati

VISHAYVishay Siliconix

威世威世科技公司

IRLZ14PBF

HEXFET Power MOSFET

DESCRIPTION Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power

IRF

IRLZ14S

Power MOSFET(Vdss=60V, Rds(on)=0.20ohm, Id=10A)

Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

IRLZ14S

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extermely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit

VISHAYVishay Siliconix

威世威世科技公司

IRLZ14S

Power MOSFET

FEATURES • Advanced process technology • Surface-mount • 175 °C operating temperature • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoHS-compliant and / or par

VISHAYVishay Siliconix

威世威世科技公司

IRLZ14S_V01

Power MOSFET

FEATURES • Advanced process technology • Surface-mount • 175 °C operating temperature • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoHS-compliant and / or par

VISHAYVishay Siliconix

威世威世科技公司

IRLZ14SL

Power MOSFET(Vdss=60V, Rds(on)=0.20ohm, Id=10A)

Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

IRLZ14SPBF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extermely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit

VISHAYVishay Siliconix

威世威世科技公司

IRLZ14STRRPBFA

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extermely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit

VISHAYVishay Siliconix

威世威世科技公司

IRLZ14TRRA

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extermely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit

VISHAYVishay Siliconix

威世威世科技公司

IRLZ14/SiHLZ14

Power MOSFET

VISHAYVishay Siliconix

威世威世科技公司

IRLZ14_11

Power MOSFET

文件：1.08982 Mbytes Page：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRLZ14A

isc N-Channel MOSFET Transistor

文件：280.48 Kbytes Page：2 Pages

ISC

无锡固电

IRLZ14L

Power MOSFET

文件：317.61 Kbytes Page：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRLZ14LPBF

Power MOSFET

文件：317.61 Kbytes Page：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRLZ14PBF

Power MOSFET

文件：1.08982 Mbytes Page：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRLZ14PBF

Power MOSFET

文件：1.16541 Mbytes Page：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRLZ14S

Power MOSFET

文件：317.61 Kbytes Page：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRLZ14S_11

Power MOSFET

文件：317.61 Kbytes Page：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRLZ14SPBF

Power MOSFET

文件：317.61 Kbytes Page：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRLZ14SPBF

Power MOSFET

文件：396.23 Kbytes Page：11 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRLZ14STRLPBFA

Power MOSFET

文件：396.23 Kbytes Page：11 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRLZ14STRRPBF

Power MOSFET

文件：317.61 Kbytes Page：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRLZ14STRRPBFA

Power MOSFET

文件：396.23 Kbytes Page：11 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRLZ14产品属性

  • 类型

    描述

  • 型号

    IRLZ14

  • 功能描述

    MOSFET N-Chan 60V 10 Amp

  • RoHS

    否

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS（导通）

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

IRLZ14供应商更多...

更新时间：2026-3-1 19:10:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市明嘉莱科技有限公司
IRLZ14A
FAIRCHILD/仙童
24+
TO 220
155667
明嘉莱只做原装正品现货
询价
深圳市华斯顿科技有限公司
IRLZ14STRLPBF
IR
25+23+
TO-263
28923
绝对原装正品全新进口深圳现货
询价
深圳市胜彬电子有限公司
IRLZ14S
IR
22+
TO-263
8000
原装正品支持实单
询价
深圳市一线半导体有限公司
IRLZ14PBF
VishayIR
24+
TO-220AB
8921
询价
深圳市科恒伟业电子有限公司
IRLZ14PBF
VISHAY/威世
2450+
TO-220
9850
只做原装正品现货或订货假一赔十!
询价
深圳市中联芯电子有限公司
IRLZ14A
VBsemi
23+
TO220
10065
原装正品,有挂有货,假一赔十
询价
洪芯国际半导体（深圳）有限公司
IRLZ14PBF
VISHAY
26+
原厂原封装
86720
全新原装正品价格最实惠 假一赔百
询价
齐创科技(上海,北京,青岛)有限公司
IRLZ14PBF
VIS
23+
TO-220AB
5000
原装正品,假一罚十
询价
深圳市纳艾斯科技有限公司
IRLZ14L
IR
24+
TO-262
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
询价
深圳市莱克讯科技有限公司
IRLZ14
IR
1923+
TO-220
6896
原装进口现货库存专业工厂研究所配单供货
询价

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IRLZ14规格书下载地址

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