DESCRIPTION

Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

• Dynamic dV/dt Rating

• Logic-Level Gate Drive

• RDS(on) Specified at VGS = 4 V & 5 V

• 175 °C Operating Temperature

• Fast Switching

• Ease of Paralleling

• Simple Drive Requirements

• Lead-free