Power MOSFET(Vdss=200V, RdS(on)=0.40ohm, Id=9.0A)

VDSS = 200V RDS(on) = 0.40Ω ID = 9.0A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The TO-220 package is universally preferred for all comme

Power MOSFET

VDS (V) 200 V RDS(on) (Ω) VGS = 5 V 0.40 Qg (Max.) (nC) 40 Qgs (nC) 5.5 Qgd (nC) 24 Configuration Single DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectivenes

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Logic-level gate drive • RDS(on) specified at VGS = 4 V and 5 V • 150 °C operating temperature • Fast switching • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Logic-level gate drive • RDS(on) specified at VGS = 4 V and 5 V • 150 °C operating temperature • Fast switching • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

Power MOSFET

Power MOSFET(Vdss=200V, RdS(on)=0.40ohm, Id=9.0A)

HEXFET Power Mosfet

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Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Logic-level gate drive • RDS(on) specified at VGS = 4 V and 5 V • 150 °C operating temperature • Fast switching • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

Advanced Power MOSFET

BVDSS = 200 V RDS(on) = 0.4Ω ID = 9 A FEATURES ♦ Logic-Level Gate Drive ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 200V ♦ Lower RDS(ON): 0.335Ω

Power MOSFET

VDS (V) 200 V RDS(on) (Ω) VGS = 5 V 0.40 Qg (Max.) (nC) 40 Qgs (nC) 5.5 Qgd (nC) 24 Configuration Single DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectivenes

HEXFET짰 Power MOSFET

VDSS = 200V RDS(on) = 0.40Ω ID = 9.0A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The TO-220 package is universally preferred for all comme

Power MOSFET(Vdss=200V, Rds(on)=0.40ohm, Id=9.0A)

VDSS = 200V RDS(on) = 0.40Ω ID = 9.0A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SMD-220 is a surface mount power package capable o

Power MOSFET

FEATURES • Surface-mount • Available in tape and reel • Dynamic dv/dt rating • Repetitive avalanche rated • Logic-level gate drive • RDS(on) specified at VGS = 4 V and 5 V • 150 °C operating temperature • Material categorization: for definitions of compliance please see www.vishay.com/doc

Power MOSFET

FEATURES • Surface-mount • Available in tape and reel • Dynamic dv/dt rating • Repetitive avalanche rated • Logic-level gate drive • RDS(on) specified at VGS = 4 V and 5 V • 150 °C operating temperature • Material categorization: for definitions of compliance please see www.vishay.com/doc

HEXFET Power MOSFET

VDSS = 200V RDS(on) = 0.40Ω ID = 9.0A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SMD-220 is a surface mount power package capable of

Power MOSFET

isc N-Channel MOSFET Transistor

文件：280.94 Kbytes Page：2 Pages

Available in Tape and Reel

文件：226.54 Kbytes Page：9 Pages

Power MOSFET

文件：265.88 Kbytes Page：10 Pages

Power MOSFET

文件：265.88 Kbytes Page：10 Pages

Power MOSFET

文件：265.88 Kbytes Page：10 Pages

9A 200V N-channel Enhancement Mode Power MOSFET

1 Description These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard. 2 Features ● Fast Switching ● Low ON Resistance(Rdso

Fast switching

Features • Fast switching • 100% avalanche tested • Improved dv/dt capability Application • DC Motor Control and Class D Amplifier • Uninterruptible Power Supply (UPS) • Automotive

Fast switching

Features · Fast switching · 100 avalanche tested · Improved dv/dt capability Application · DC Motor Control and Class D Amplifier · Uninterruptible Power Supply (UPS) · Automotive

Low Frequencies

文件：141.01 Kbytes Page：2 Pages

COMPACT DIGITAL THERMOMETERS & THERMO-HYGROMETERS

文件：87.55 Kbytes Page：1 Pages