VDSS = 200V

RDS(on) = 0.40Ω

ID = 9.0A

Description

Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

● Dynamic dv/dt Rating

● Repetitive Avalanche Rated

● Logic-Level Gate Drive

● RDS(ON) Specified at VGS = 4V & 5V

● 150°C Operating Temperature

● Fast Switching

● Ease of paralleling

● Lead-Free