HEXFET Power MOSFET

VDSS = 200V RDS(on) = 0.40Ω ID = 9.0A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SMD-220 is a surface mount power package capable of

Power MOSFET

文件：265.88 Kbytes Page：10 Pages

9A 200V N-channel Enhancement Mode Power MOSFET

1 Description These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard. 2 Features ● Fast Switching ● Low ON Resistance(Rdso

Fast switching

Features • Fast switching • 100% avalanche tested • Improved dv/dt capability Application • DC Motor Control and Class D Amplifier • Uninterruptible Power Supply (UPS) • Automotive

Fast switching

Features · Fast switching · 100 avalanche tested · Improved dv/dt capability Application · DC Motor Control and Class D Amplifier · Uninterruptible Power Supply (UPS) · Automotive

Low Frequencies

文件：141.01 Kbytes Page：2 Pages

COMPACT DIGITAL THERMOMETERS & THERMO-HYGROMETERS

文件：87.55 Kbytes Page：1 Pages