位置:首页 > IC中文资料 > IRL520

IRL520价格

参考价格:¥9.6050

型号:IRL520 品牌:Vishay 备注:这里有IRL520多少钱,2026年最近7天走势,今日出价,今日竞价,IRL520批发/采购报价,IRL520行情走势销售排行榜,IRL520报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRL520

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipa

VISHAYVishay Siliconix

威世威世科技公司

IRL520

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Logic-level gate drive • RDS(on) specified at VGS = 4 V and 5 V • 175 °C operating temperature • Fast switching • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

VISHAYVishay Siliconix

威世威世科技公司

IRL520

Power MOSFET

FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4 V and 5 V • 175 °C Operating Temperature • Fast Switching • Ease of Paralleling • Compliant to RoHS Directive 2002/95/EC DESCRIPTION Third generation Power MOSFETs from

VISHAYVishay Siliconix

威世威世科技公司

IRL520

Power MOSFET

• Dynamic dV/dt rating\n• Repetitive avalanche rated\n• Logic-level gate drive;

VISHAYVishay Siliconix

威世威世科技公司

IRL520

HEXFET POWER MOSFET

INFINEON

英飞凌

IRL520

HEXFET POWER MOSFET

文件:183.34 Kbytes Page:6 Pages

IRF

IRL520

Power MOSFET

文件:1.16464 Mbytes Page:9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Logic-level gate drive • RDS(on) specified at VGS = 4 V and 5 V • 175 °C operating temperature • Fast switching • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

VISHAYVishay Siliconix

威世威世科技公司

Advenced Power MOSFET

BVDSS = 100 V RDS(on) = 0.22Ω ID = 9.2 A FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 100V ♦ Lower RDS(ON): 0.176Ω (Typ.)

FAIRCHILD

仙童半导体

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Logic-level gate drive • RDS (on) specified at VGS = 4 V and 5 V • 175°C operating temperature • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides inform

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Logic-level gate drive • RDS (on) specified at VGS = 4 V and 5 V • 175°C operating temperature • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides inform

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipa

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4 V and 5 V • 175 °C Operating Temperature • Fast Switching • Ease of Paralleling • Compliant to RoHS Directive 2002/95/EC DESCRIPTION Third generation Power MOSFETs from

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件:1.16464 Mbytes Page:9 Pages

VISHAYVishay Siliconix

威世威世科技公司

isc N-Channel MOSFET Transistor

文件:280.43 Kbytes Page:2 Pages

ISC

无锡固电

Repetitive Avalanche Rated

文件:287.92 Kbytes Page:9 Pages

VISHAYVishay Siliconix

威世威世科技公司

HEXFET Power MOSFET

文件:134.24 Kbytes Page:8 Pages

IRF

HEXFET Power MOSFET

文件:36.1 Kbytes Page:2 Pages

IRF

N-Channel MOSFET Transistor

文件:338.2 Kbytes Page:2 Pages

ISC

无锡固电

Isc N-Channel MOSFET Transistor

文件:299.89 Kbytes Page:2 Pages

ISC

无锡固电

Logic-Level Gate Drive

文件:197.67 Kbytes Page:11 Pages

IRF

Logic-Level Gate Drive

文件:398.37 Kbytes Page:10 Pages

IRF

ADVANCED PROCESS TECHNOLOGY

文件:313.84 Kbytes Page:9 Pages

IRF

Logic-level Gate Drive

文件:313.84 Kbytes Page:9 Pages

IRF

N-Channel 100-V (D-S) MOSFET

文件:972.8 Kbytes Page:7 Pages

VBSEMI

微碧半导体

ADVANCED PROCESS TECHNOLOGY

文件:313.84 Kbytes Page:9 Pages

IRF

Logic-Level Gate Drive

文件:197.67 Kbytes Page:11 Pages

IRF

丝印代码:D2PAK;Isc N-Channel MOSFET Transistor

文件:188.6 Kbytes Page:2 Pages

ISC

无锡固电

HEXFET Power MOSFET

文件:180.79 Kbytes Page:10 Pages

IRF

HEXFET Power MOSFET

文件:180.79 Kbytes Page:10 Pages

IRF

Logic-Level Gate Drive

文件:398.37 Kbytes Page:10 Pages

IRF

ADVANCED PROCESS TECHNOLOGY

文件:407.51 Kbytes Page:11 Pages

IRF

ADVANCED PROCESS TECHNOLOGY

文件:407.51 Kbytes Page:11 Pages

IRF

ADVANCED PROCESS TECHNOLOGY

文件:407.51 Kbytes Page:11 Pages

IRF

Power MOSFET

文件:924.93 Kbytes Page:8 Pages

VISHAYVishay Siliconix

威世威世科技公司

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS(VOLTAGE 20 to 100 Volts CURRENT - 5 Ampere)

VOLTAGE 20 to 100 Volts CURRENT - 5 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Low power loss, High efficiency • High surge ca

PANJIT

強茂

Amplifier with Voltage Controlled Gain, AGCAmp

文件:609.73 Kbytes Page:8 Pages

NSC

国半

Amplifier with Voltage Controlled Gain, AGCAmp

文件:609.73 Kbytes Page:8 Pages

NSC

国半

Amplifier with Voltage Controlled Gain, AGCAmp

文件:609.73 Kbytes Page:8 Pages

NSC

国半

Amplifier with Voltage Controlled Gain, AGCAmp

文件:609.73 Kbytes Page:8 Pages

NSC

国半

IRL520产品属性

  • 类型

    描述

  • OPN:

    IRL520NPBF

  • Qualification:

    Non-Automotive

  • Package name:

    TO220

  • VDS max:

    100 V

  • RDS (on) @10V max:

    180 mΩ

  • ID @25°C max:

    10 A

  • QG typ @4.5V:

    13.3 nC

  • Polarity:

    N

  • VGS(th) min:

    1 V

  • VGS(th) max:

    2 V

  • VGS(th):

    1.5 V

  • Technology:

    IR MOSFET™

更新时间:2026-5-21 16:40:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
22+
D2-PAK
9450
原装正品,实单请联系
INFINEON/英飞凌
25+
TO-220
15000
原装现货假一赔十
IR
26+
TO-220AB
18655
全新原装正品,价格优势,长期供应,量大可订
IR
2450+
TO-262
9850
只做原装正品现货或订货假一赔十!
Infineon(英飞凌)
25+
D2PAK
12421
原装正品现货,原厂订货,可支持含税原型号开票。
Infineon(英飞凌)
25+
D2PAK
12421
原装正品现货,原厂订货,可支持含税原型号开票。
INFINEON/英飞凌
25+
TO-220
20300
INFINEON/英飞凌原装特价IRL520N即刻询购立享优惠#长期有货
Infineon(英飞凌)
23+
25650
新到现货,只做原装进口
IR
2025+
N/A
70000
柒号只做原装 现货价秒杀全网
IR
17+
TO-220
385
只做原装正品

IRL520数据表相关新闻