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型号 功能描述 生产厂家 企业 LOGO 操作
IRL520A

Advenced Power MOSFET

BVDSS = 100 V RDS(on) = 0.22Ω ID = 9.2 A FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 100V ♦ Lower RDS(ON): 0.176Ω (Typ.)

FAIRCHILD

仙童半导体

IRL520A

isc N-Channel MOSFET Transistor

文件:280.43 Kbytes Page:2 Pages

ISC

无锡固电

IRL520A

Advenced Power MOSFET

ONSEMI

安森美半导体

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS(VOLTAGE 20 to 100 Volts CURRENT - 5 Ampere)

VOLTAGE 20 to 100 Volts CURRENT - 5 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Low power loss, High efficiency • High surge ca

PANJIT

強茂

Amplifier with Voltage Controlled Gain, AGCAmp

文件:609.73 Kbytes Page:8 Pages

NSC

国半

Amplifier with Voltage Controlled Gain, AGCAmp

文件:609.73 Kbytes Page:8 Pages

NSC

国半

Amplifier with Voltage Controlled Gain, AGCAmp

文件:609.73 Kbytes Page:8 Pages

NSC

国半

Amplifier with Voltage Controlled Gain, AGCAmp

文件:609.73 Kbytes Page:8 Pages

NSC

国半

IRL520A产品属性

  • 类型

    描述

  • 型号

    IRL520A

  • 功能描述

    MOSFET 100V N-Channel a-FET Logic Level

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2026-5-21 10:50:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
24+
TO220
15000
仙童
06+
TO-220
5000
原装库存
FAIRCHILD/仙童
22+
TO-220
6000
十年配单,只做原装
FSC
24+
NA
27003
只做原装正品现货 欢迎来电查询15919825718
FAIRCHILD
26+
TO-220
9526
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
FAIRCHILD
1932+
TO-220
322
一级代理,专注军工、汽车、医疗、工业、新能源、电力

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