FEATURES

• Dynamic dV/dt rating

• Repetitive avalanche rated

• Logic-level gate drive

• RDS (on) specified at VGS = 4 V and 5 V

• 175°C operating temperature

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

Note

* This datasheet provides information about parts that are

RoHS-compliant and / or parts that are non RoHS-compliant. For

example, parts with lead (Pb) terminations are not RoHS-compliant.

Please see the information / tables in this datasheet for details

DESCRIPTION

Third generation power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The I2PAK (TO-262) is a through hole power package

capable of accommodating die size up to HEX-4. It provides

the highest power capability and the lowest possible

on-resistance in any existing surface-mount package.