HEXFET Power MOSFET

Description Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well kn

N-Channel MOSFET Transistor

• DESCRIPTION • Combine with the fast switching speed and ruggedized device design,provide the designer with an extremely efficient and reliable device for use in a wide variety of applications. • FEATURES • Static drain-source on-resistance: RDS(on) ≤4.0mΩ • Enhancement mode • Fast Switching

采用 TO-220AB 封装的 40V 单 N 通道 HEXFET 功率 MOSFET

HEXFET-R Power MOSFET

Description Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well kn

HEXFET짰 Power MOSFET

Description Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well kn

HEXFET-R Power MOSFET

Description Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well kn

HEXFET짰 Power MOSFET

Description Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well kn

HEXFET짰 Power MOSFET

Description Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well kn

AUTOMOTIVE MOSFET

采用 TO-220 封装的 40V 单 N 沟道功率 MOSFET

StrongIRFET™ 功率 MOSFET 系列针对低 RDS(on) 和高电流能力进行了优化。 这些器件非常适合要求高性能和耐用性的低频应用。丰富的产品组合适合广泛的应用，包括直流电机、电池管理系统、逆变器和 DC-DC 变换器。 • 针对最广泛的可用性进行了优化\n• 行业标准通孔电源\n• 高额定电流;

AUTOMOTIVE MOSFET

AUTOMOTIVE MOSFET HEXFET짰 Power MOSFET

Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features comb

AUTOMOTIVE MOSFET HEXFET짰 Power MOSFET

Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features comb

AUTOMOTIVE MOSFET

AUTOMOTIVE MOSFET HEXFET짰 Power MOSFET

Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features comb

HEXFET짰 Power MOSFET ( VDSS = 40V , RDS(on) = 4.0m廓 , ID = 160A )

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Advanced Process Technology

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Advanced Process Technology

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丝印代码：D2PAK；Isc N-Channel MOSFET Transistor

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Advanced Process Technology

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丝印代码：D2PAK；isc N-Channel MOSFET Transistor

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AUTOMOTIVE MOSFET HEXFET® Power MOSFET

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Advanced Process Technology

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Advanced Process Technology

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Fm Stereo Transmitter

Fm Stereo Transmitter

PRECISION LOW DRIFT VOLTAGE REFERENCES

Voltage Reference Family The MC1404 of ICs is a family of temperature–compensated voltage references for precision data conversion applications, such as A/D, D/A, V/F, and F/V. Advances in laser–trimming and ion–implanted devices, as well as monolithic fabrication techniques, make these devices s

SURFACE MOUNT SWITCHING DIODES

Case : SOT-23 Molded Plastic Operating Temperature : -65°C to 150°C

Integrated Circuit TV Sound IF Amplifier, Detector, AF Output Circuit

Description: The NTE1404 is an integrated circuit in a 16–Lead DIP w/Fin type package designed for use as a TV sound signal processing circuit. Features: • Provides Total TV Sound Signal Processing Circuitry from IF Amplifier through AF Output • DC Volume Control System: Control Volt