IRL1404价格

参考价格:¥8.3270

型号:IRL1404PBF 品牌:INTERNATIONAL 备注:这里有IRL1404多少钱,2025年最近7天走势,今日出价,今日竞价,IRL1404批发/采购报价,IRL1404行情走势销售排行榜,IRL1404报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRL1404

HEXFET Power MOSFET

Description Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well kn

IRF

IRL1404

N-Channel MOSFET Transistor

• DESCRIPTION • Combine with the fast switching speed and ruggedized device design,provide the designer with an extremely efficient and reliable device for use in a wide variety of applications. • FEATURES • Static drain-source on-resistance: RDS(on) ≤4.0mΩ • Enhancement mode • Fast Switching

ISC

无锡固电

IRL1404

采用 TO-220AB 封装的 40V 单 N 通道 HEXFET 功率 MOSFET

Infineon

英飞凌

HEXFET-R Power MOSFET

Description Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well kn

IRF

HEXFET짰 Power MOSFET

Description Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well kn

IRF

HEXFET-R Power MOSFET

Description Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well kn

IRF

HEXFET짰 Power MOSFET

Description Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well kn

IRF

HEXFET짰 Power MOSFET

Description Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well kn

IRF

AUTOMOTIVE MOSFET

IRF

AUTOMOTIVE MOSFET

IRF

AUTOMOTIVE MOSFET HEXFET짰 Power MOSFET

Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features comb

IRF

AUTOMOTIVE MOSFET HEXFET짰 Power MOSFET

Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features comb

IRF

AUTOMOTIVE MOSFET

IRF

AUTOMOTIVE MOSFET HEXFET짰 Power MOSFET

Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features comb

IRF

HEXFET짰 Power MOSFET ( VDSS = 40V , RDS(on) = 4.0m廓 , ID = 160A )

文件:133.25 Kbytes Page:9 Pages

IRF

Advanced Process Technology

文件:219.46 Kbytes Page:8 Pages

IRF

Advanced Process Technology

文件:219.46 Kbytes Page:8 Pages

IRF

Isc N-Channel MOSFET Transistor

文件:299.06 Kbytes Page:2 Pages

ISC

无锡固电

Advanced Process Technology

文件:654.28 Kbytes Page:11 Pages

IRF

Advanced Process Technology

文件:654.28 Kbytes Page:11 Pages

IRF

isc N-Channel MOSFET Transistor

文件:263.83 Kbytes Page:2 Pages

ISC

无锡固电

采用 TO-220 封装的 40V 单 N 沟道功率 MOSFET

Infineon

英飞凌

AUTOMOTIVE MOSFET HEXFET® Power MOSFET

Infineon

英飞凌

Advanced Process Technology

文件:291.23 Kbytes Page:12 Pages

IRF

Advanced Process Technology

文件:291.23 Kbytes Page:12 Pages

IRF

Advanced Process Technology

文件:291.23 Kbytes Page:12 Pages

IRF

Primary Standard Capacitor

Features: NEW 5 nF and 10 nF now available A national laboratory standard For calibrating working standards Standard for dissipation factor Available in 10, 100 and 1000 pF 20 ppm/year stability, typically better Hermetically sealed in dry nitrogen

IET

Precision Lab Standard N Connectors

Features o Precision Connector - Interface dimensions per MIL-STD-348 Test connector o Rugged Construction - Numerically controlled machining is used to produce high quality uniform parts with controlled concentricity and surface finishes. The result is excellent SWR repeatability.

APITECH

It looks like a servo

文件:115.89 Kbytes Page:2 Pages

Adafruit

250A竊?0V N-CHANNEL MOSFET

文件:147.17 Kbytes Page:6 Pages

KIA

可易亚半导体

ALUMINUM CHASSIS

文件:109.8 Kbytes Page:1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

IRL1404产品属性

  • 类型

    描述

  • 型号

    IRL1404

  • 功能描述

    MOSFET N-CH 40V 160A TO-262

  • RoHS

  • 类别

    分离式半导体产品 >> FET - 单

  • 系列

    HEXFET®

  • 标准包装

    1,000

  • 系列

    MESH OVERLAY™ FET

  • MOSFET N 通道,金属氧化物 FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    200V 电流 - 连续漏极(Id) @ 25°

  • C

    18A 开态Rds(最大)@ Id, Vgs @ 25°

  • C

    180 毫欧 @ 9A,10V Id 时的

  • Vgs(th)(最大)

    4V @ 250µA 闸电荷(Qg) @

  • Vgs

    72nC @ 10V 输入电容(Ciss) @

  • Vds

    1560pF @ 25V 功率 -

  • 最大

    40W

  • 安装类型

    通孔

  • 封装/外壳

    TO-220-3 整包

  • 供应商设备封装

    TO-220FP

  • 包装

    管件

更新时间:2025-12-15 22:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
24+
TO-220
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
INFINEON/英飞凌
25+
TO-220
45000
IR全新现货IRL1404即刻询购立享优惠#长期有排单订
IR
25+
TO-220
9600
百分百原装正品 真实公司现货库存 本公司只做原装 可
IR
2025+
TO-220
4675
全新原厂原装产品、公司现货销售
IR
2223+
TO-220
26800
只做原装正品假一赔十为客户做到零风险
IR/VISHAY
25+
TO-TO-220
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
IR
2450+
TO-263
9850
只做原装正品现货或订货假一赔十!
IR
25+
40V160A200W
880000
明嘉莱只做原装正品现货
IR(国际整流器)
24+
N/A
14548
原厂可订货,技术支持,直接渠道。可签保供合同
IR
06+
TO-220
10000
全新原装 绝对有货

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