HEXFET-R Power MOSFET

Description Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well kn

Isc N-Channel MOSFET Transistor

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采用 D²PAK 封装的 IR MOSFET 40 V

HEXFET짰 Power MOSFET

Description Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well kn

HEXFET짰 Power MOSFET

Description Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well kn

Advanced Process Technology

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Advanced Process Technology

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Primary Standard Capacitor

Features: NEW 5 nF and 10 nF now available A national laboratory standard For calibrating working standards Standard for dissipation factor Available in 10, 100 and 1000 pF 20 ppm/year stability, typically better Hermetically sealed in dry nitrogen

Precision Lab Standard N Connectors

Features o Precision Connector - Interface dimensions per MIL-STD-348 Test connector o Rugged Construction - Numerically controlled machining is used to produce high quality uniform parts with controlled concentricity and surface finishes. The result is excellent SWR repeatability.

It looks like a servo

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250A竊?0V N-CHANNEL MOSFET

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ALUMINUM CHASSIS

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