| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRKT26 | THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. Features ■ Hig | IRF |   | |
IRKT26 | POWER MODULE 文件：1.89995 Mbytes Page：5 Pages | IRI | | |
ADD-A-pakTM GEN V Power Modules Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. Features ■ Hig | IRF | | ||
THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. Features ■ Hig | IRF | | ||
ADD-A-pakTM GEN V Power Modules Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. Features ■ Hig | IRF | | ||
ADD-A-pakTM GEN V Power Modules Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. Features ■ Hig | IRF | | ||
ADD-A-pakTM GEN V Power Modules Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. Features ■ Hig | IRF | | ||
THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. Features ■ Hig | IRF | | ||
ADD-A-pakTM GEN V Power Modules Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. Features ■ Hig | IRF | | ||
THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. Features ■ Hig | IRF | | ||
ADD-A-pakTM GEN V Power Modules Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. Features ■ Hig | IRF | | ||
ADD-A-pakTM GEN V Power Modules Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. Features ■ Hig | IRF | | ||
ADD-A-pakTM GEN V Power Modules Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. Features ■ Hig | IRF | | ||
THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. Features ■ Hig | IRF | | ||
ADD-A-pakTM GEN V Power Modules Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. Features ■ Hig | IRF | | ||
ADD-A-pakTM GEN V Power Modules Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. Features ■ Hig | IRF | | ||
THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. Features ■ Hig | IRF | | ||
ADD-A-pakTM GEN V Power Modules Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. Features ■ Hig | IRF | | ||
THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. Features ■ Hig | IRF | | ||
ADD-A-pakTM GEN V Power Modules Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. Features ■ Hig | IRF | | ||
ADD-A-pakTM GEN V Power Modules Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. Features ■ Hig | IRF | | ||
ADD-A-pakTM GEN V Power Modules Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. Features ■ Hig | IRF | | ||
THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. Features ■ Hig | IRF | | ||
ADD-A-pakTM GEN V Power Modules Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. Features ■ Hig | IRF | | ||
ADD-A-pakTM GEN V Power Modules Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. Features ■ Hig | IRF | | ||
THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. Features ■ Hig | IRF | | ||
ADD-A-pakTM GEN V Power Modules Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. Features ■ Hig | IRF | | ||
THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. Features ■ Hig | IRF | | ||
ADD-A-pakTM GEN V Power Modules Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. Features ■ Hig | IRF | | ||
ADD-A-pakTM GEN V Power Modules Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. Features ■ Hig | IRF | | ||
THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. Features ■ Hig | IRF | | ||
ADD-A-pakTM GEN V Power Modules Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. Features ■ Hig | IRF | | ||
ADD-A-pakTM GEN V Power Modules Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. Features ■ Hig | IRF | | ||
THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. Features ■ Hig | IRF | | ||
ADD-A-pakTM GEN V Power Modules Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. Features ■ Hig | IRF | | ||
ADD-A-pakTM GEN V Power Modules Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. Features ■ Hig | IRF | | ||
ADD-A-pakTM GEN V Power Modules Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. Features ■ Hig | IRF | | ||
THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. Features ■ Hig | IRF | | ||
ADD-A-pakTM GEN V Power Modules Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. Features ■ Hig | IRF | | ||
THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. Features ■ Hig | IRF | | ||
ADD-A-pakTM GEN V Power Modules Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. Features ■ Hig | IRF | | ||
ADD-A-pakTM GEN V Power Modules Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. Features ■ Hig | IRF | | ||
THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. Features ■ Hig | IRF | | ||
ADD-A-pakTM GEN V Power Modules Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. Features ■ Hig | IRF | | ||
ADD-A-pak-TM GEN V Power Modules 文件：155.55 Kbytes Page：8 Pages | IRF | | ||
ADD-A-pak-TM GEN V Power Modules 文件：155.55 Kbytes Page：8 Pages | IRF | | ||
THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR 文件：157.8 Kbytes Page：8 Pages | IRF | | ||
ADD-A-pak-TM GEN V Power Modules 文件：155.55 Kbytes Page：8 Pages | IRF | | ||
封装/外壳：ADD-A-PAK（3 + 4） 包装：散装 描述：SCR DBL HISCR 600V 27A ADD-A-PAK 分立半导体产品 晶闸管 - SCR - 模块 | ETC 知名厂家 | ETC | | |
SCR DBL HISCR 600V 27A ADD-A-PAK | VISHAYVishay Siliconix 威世威世科技公司 | | ||
ADD-A-pak-TM GEN V Power Modules | INFINEON 英飞凌 | | ||
ADD-A-pak-TM GEN V Power Modules 文件：155.55 Kbytes Page：8 Pages | IRF | | ||
THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR 文件：157.8 Kbytes Page：8 Pages | IRF | | ||
ADD-A-pak-TM GEN V Power Modules 文件：155.55 Kbytes Page：8 Pages | IRF | | ||
封装/外壳：ADD-A-PAK（3 + 4） 包装：散装 描述：SCR DBL HISCR 800V 27A ADD-A-PAK 分立半导体产品 晶闸管 - SCR - 模块 | ETC 知名厂家 | ETC | | |
ADD-A-pakTM GEN V Power Modules | INFINEON 英飞凌 | | ||
ADD-A-pak-TM GEN V Power Modules 文件：155.55 Kbytes Page：8 Pages | IRF | | ||
THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR 文件：157.8 Kbytes Page：8 Pages | IRF | | ||
ADD-A-pak-TM GEN V Power Modules 文件：155.55 Kbytes Page：8 Pages | IRF | | ||
THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR 文件：157.8 Kbytes Page：8 Pages | IRF | |
IRKT26产品属性
- 类型
描述
- SCR 数，二极管：
2 SCRs
- 电压 - 断态：
400V
- 电流 - 通态（It（AV））（最大值）：
27A
- 电流 - 通态（It（RMS））（最大值）：
60A
- 电压 - 栅极触发（Vgt）（最大值）：
2.5V
- 电流 - 栅极触发（Igt）（最大值）：
150mA
- 电流 - 不重复浪涌 50，60Hz（Itsm）：
400A，420A
- 电流 - 保持（Ih）（最大值）：
200mA
- 工作温度：
-40°C ~ 125°C （TJ）
- 安装类型：
底座安装
- 封装/外壳：
ADD-A-PAK（3 + 4）
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
650 |
|||||
IR |
25+ |
MODULE |
3200 |
全新原装、诚信经营、公司现货销售 |
|||
IR |
23+ |
27A1600V |
620 |
全新原装正品,量大可订货!可开17%增值票!价格优势! |
|||
可控硅 |
22+ |
原廠原封 |
650 |
全新原装现货!自家库存! |
|||
IR |
原厂封装 |
1000 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
IR |
25+ |
MODULE |
131 |
主打螺丝模块系列 |
|||
IR |
26+ |
NA |
238 |
专业电子元器件供应链正迈科技特价代理特价，原装元器件供应，支持开发样品 |
|||
IR |
24+ |
MODULE |
6000 |
全新原装正品现货 假一赔佰 |
|||
INFINEON/英飞凌 |
25+ |
MODULE |
32360 |
INFINEON/英飞凌全新特价IRKT26-06即刻询购立享优惠#长期有货 |
|||
IR |
2447 |
MODULE |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
IRKT26规格书下载地址
IRKT26参数引脚图相关
- l101
- l100
- ku波段
- kt250
- kse13005
- ks20
- km710
- ka5q1265rf
- k9f1208
- k310
- k2698
- k233
- k2055
- k2010
- jumper
- jtag接口
- jk触发器
- j111
- j108
- isd1420
- IRL220
- IRL1404
- IRL1104
- IRL1004
- IRL10
- IRKV105
- IRKU71
- IRKU41
- IRKU105
- IRKTF82
- IRKTF72
- IRKT92
- IRKT71
- IRKT70
- IRKT570
- IRKT55
- IRKT500
- IRKT41
- IRKT40
- IRKT330
- IRKT27AS90
- IRKT27/10A
- IRKT27/08P
- IRKT27/08AS90
- IRKT27/08A
- IRKT27/06P
- IRKT27/06AS90
- IRKT27/06A
- IRKT27/04P
- IRKT27/04AS90
- IRKT27/04A
- IRKT26AS90
- IRKT26/08P
- IRKT26/08A
- IRKT26/06S90P
- IRKT26/06P
- IRKT26/06A
- IRKT26/04P
- IRKT26/04AS90
- IRKT26/04A
- IRKT250-16N
- IRKT250-16D20N
- IRKT250-16D20
- IRKT250-16
- IRKT250-14N
- IRKT250-14D20N
- IRKT250-14D20
- IRKT25014D20
- IRKT250-14
- IRKT250-12PBF
- IRKT250-12N
- IRKT250-12D20N
- IRKT250-12D20
- IRKT250-12
- IRKT250-10N
- IRKT250-10
- IRKT250-08N
- IRKT250-08D20N
- IRKT250-08D20
- IRKT250-08
- IRKT250
- IRKT1O6
- IRKT162
- IRKT142
- IRKT136
- IRKT130
- IRKT106
- IRKT105
- IRKT.91
- IRKT.71
- IRKL240
- IRKJ91
- IRKJ71
- IRKJ56
- IRKJ320
- IRKJ270
- IRKJ250
- IRKH92
- IRKH70
- IRKH570
IRKT26数据表相关新闻
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2026-4-16IRGP4266D-EPBF
IRGP4266D-EPBF
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IRKD7104，IRKD71-04，IRKD71-06，IRKD71-08，IRKD71-16，IRKD91-04
2020-1-12IRL2203NPBF 原装现货热卖！！！！
IRL2203NPBF 厂家：IR 封装：TO-220 现货热卖 原厂原包装，只做原装，假一赔万 !!! 欢迎致电 上海意淼张小姐 18301798078 021-61316368 QQ:2719102545
2019-10-11IRL1004STRRPBF公司大量原装正品现货/长期供应
IRL1004STRRPBF公司大量原装正品现货/长期供应
2019-5-8
DdatasheetPDF页码索引
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