TRANSISTOR P-CHANNEL(BVdss=-100V, Rds(on)=0.30ohm, Id=-6.5A)

International Rectifier’s RAD-Hard HEXFETTM technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effec

抗辐射 MOSFET

\n优势:;

Simple Drive Requirements

文件：134.33 Kbytes Page：8 Pages

Simple Drive Requirements

文件：134.33 Kbytes Page：8 Pages

P-CHANNEL POWER MOSFETS

FEATURES • Low RDS(on) • Improved inductive ruggedness • Fsat switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability

P-CHANNEL POWER MOSFETS

FEATURES • Low RDS(on) • Improved inductive ruggedness • Fsat switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability

TC9130P 4CH INDEPENDENT CYCLIC TYPE TOUCH SWITCH

P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS

文件：20.72 Kbytes Page：2 Pages

P-CHANNEL POWER MOSFET

文件：16.9 Kbytes Page：2 Pages