P-CHANNEL POWER MOSFETS

FEATURES • Low RDS(on) • Improved inductive ruggedness • Fsat switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability

TRANSISTORS P-CHANNEL(Vdss=-100V, Rds(on)=0.30ohm, Id=-11A)

Product Summary The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior rever

-12A, -100V, 0.30 Ohm, P-Channel Power MOSFET

-12A, -100V, 0.30 Ohm, P-Channel Power MOSFET These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these powe

isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -11A@ TC=25℃ · Drain Source Voltage -VDSS= -100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.3Ω(Max)@VGS= -10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

高可靠性功率 MOSFET

\n优势:;

P?밅HANNEL POWER MOSFET

文件：23.56 Kbytes Page：2 Pages

isc N-Channel MOSFET Transistor

文件：290.7 Kbytes Page：2 Pages

P-CHANNEL POWER MOSFET

文件：19.15 Kbytes Page：2 Pages

P?밅HANNEL POWER MOSFET

文件：23.56 Kbytes Page：2 Pages

P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS

文件：20.72 Kbytes Page：2 Pages

P-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS

文件：21.7 Kbytes Page：2 Pages

P-CHANNEL POWER MOSFETS

FEATURES • Low RDS(on) • Improved inductive ruggedness • Fsat switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability

TC9130P 4CH INDEPENDENT CYCLIC TYPE TOUCH SWITCH

P-CHANNEL POWER MOSFET

文件：16.9 Kbytes Page：2 Pages