位置：首页 > IC中文资料第5471页 > IRF9130SMD
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRF9130SMD | P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS 文件：20.72 Kbytes Page：2 Pages | SEME-LAB |   | |
P-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS 文件：21.7 Kbytes Page：2 Pages | SEME-LAB | | ||
P-CHANNEL POWER MOSFETS FEATURES • Low RDS(on) • Improved inductive ruggedness • Fsat switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability | SAMSUNG 三星 | | ||
P-CHANNEL POWER MOSFETS FEATURES • Low RDS(on) • Improved inductive ruggedness • Fsat switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability | SAMSUNG 三星 | | ||
TC9130P 4CH INDEPENDENT CYCLIC TYPE TOUCH SWITCH
| TOSHIBA 东芝 | | ||
P-CHANNEL POWER MOSFET 文件：16.9 Kbytes Page：2 Pages | SEME-LAB | |
IRF9130SMD产品属性
- 类型
描述
- 型号
IRF9130SMD
- 制造商
SEME-LAB
- 制造商全称
Seme LAB
- 功能描述
P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
65480 |
|||||
INTREC |
25+ |
NA |
2486 |
专做原装正品,假一罚百! |
|||
IR |
24+ |
SOT-223 |
59 |
||||
INR |
23+ |
TO-3 |
5000 |
原装正品,假一罚十 |
|||
IR |
23+ |
8000 |
只做原装现货 |
||||
IR |
23+ |
7000 |
|||||
IR |
24+/25+ |
2000 |
原装正品现货库存价优 |
||||
INR |
23+ |
TO-3 |
44353 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
|||
IR |
22+ |
6000 |
终端可免费供样,支持BOM配单 |
||||
VISHAY/威世 |
23+ |
ThroughHole |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
IRF9130SMD规格书下载地址
IRF9130SMD参数引脚图相关
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2018-12-28
DdatasheetPDF页码索引
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