RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-204AA)

RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-204AA) International Rectifier’s RADHard HEXFET® technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been char

Simple Drive Requirements

文件：127.37 Kbytes Page：8 Pages

RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-204AA)

Simple Drive Requirements

文件：127.37 Kbytes Page：8 Pages

P-CHANNEL POWER MOSFETS

FEATURES • Low RDS(on) • Improved inductive ruggedness • Fsat switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability

P-CHANNEL POWER MOSFETS

FEATURES • Low RDS(on) • Improved inductive ruggedness • Fsat switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability

TC9130P 4CH INDEPENDENT CYCLIC TYPE TOUCH SWITCH

P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS

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P-CHANNEL POWER MOSFET

文件：16.9 Kbytes Page：2 Pages