IRGSL6B60KDPBF价格

参考价格:¥9.7505

型号:IRGSL6B60KDPBF 品牌:IR 备注:这里有IRGSL6B60KDPBF多少钱,2025年最近7天走势,今日出价,今日竞价,IRGSL6B60KDPBF批发/采购报价,IRGSL6B60KDPBF行情走势销售排行榜,IRGSL6B60KDPBF报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRGSL6B60KDPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10μs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Lead-Free Benefits • Benchmark Efficiency for Motor Control. • Ru

IRF

IRGSL6B60KDPBF

封装/外壳:TO-262-3,长引线,I²Pak,TO-262AA 包装:卷带(TR) 描述:IGBT NPT 600V 13A TO262 分立半导体产品 晶体管 - UGBT、MOSFET - 单

Infineon

英飞凌

INSULATED GATE BIPOLAR TRANSISTOR

Features • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low EMI. • Excellent Current

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • TO-220 is available in PbF as a Lead-Free Benefits • Benchmark Eff

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10μs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Lead-Free Benefits • Benchmark Efficiency for Motor Control. • Ru

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10μs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Lead-Free Benefits • Benchmark Efficiency for Motor Control. • Ru

IRF

INSULATED GATE BIPOLAR TRANSISTOR

Features • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. • Lead-Free. Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low EMI. • Excellent Current Sharing

IRF

IRGSL6B60KDPBF产品属性

  • 类型

    描述

  • 型号

    IRGSL6B60KDPBF

  • 功能描述

    IGBT 晶体管 600V UltraFast 10-30kHz

  • RoHS

  • 制造商

    Fairchild Semiconductor

  • 配置

    集电极—发射极最大电压

  • VCEO

    650 V

  • 集电极—射极饱和电压

    2.3 V

  • 栅极/发射极最大电压

    20 V 在25

  • C的连续集电极电流

    150 A

  • 栅极—射极漏泄电流

    400 nA

  • 功率耗散

    187 W

  • 封装/箱体

    TO-247

  • 封装

    Tube

更新时间:2025-11-4 15:39:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Infineon Technologies
22+
TO262
9000
原厂渠道,现货配单
IR
24+
NA
68932
只做原装正品现货 欢迎来电查询15919825718
IR
23+
TO-262
21368
原厂授权一级代理,专业海外优势订货,价格优势、品种
INFINEON
24+
con
10
现货常备产品原装可到京北通宇商城查价格
Infineon Technologies
23+
原装
8000
只做原装现货
Infineon Technologies
23+
原装
7000
Infineon Technologies
25+
TO-262-3 长引线 I?Pak TO-26
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证
IR
24+
TO-262-3
250
Infineon
24+
NA
3000
进口原装正品优势供应
INFINEON
24+
n/a
25836
新到现货,只做原装进口

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