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IRGSL6B60KDPBF价格
参考价格：￥9.7505
型号：IRGSL6B60KDPBF 品牌：IR 备注：这里有IRGSL6B60KDPBF多少钱，2026年最近7天走势，今日出价，今日竞价，IRGSL6B60KDPBF批发/采购报价，IRGSL6B60KDPBF行情走势销售排行榜，IRGSL6B60KDPBF报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRGSL6B60KDPBF | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10μs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Lead-Free Benefits • Benchmark Efficiency for Motor Control. • Ru | IRF |   | |
IRGSL6B60KDPBF | 封装/外壳：TO-262-3，长引线，I²Pak，TO-262AA 包装：卷带（TR） 描述：IGBT NPT 600V 13A TO262 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | Infineon 英飞凌 | | |
INSULATED GATE BIPOLAR TRANSISTOR Features • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low EMI. • Excellent Current | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • TO-220 is available in PbF as a Lead-Free Benefits • Benchmark Eff | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10μs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Lead-Free Benefits • Benchmark Efficiency for Motor Control. • Ru | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10μs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Lead-Free Benefits • Benchmark Efficiency for Motor Control. • Ru | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR Features • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. • Lead-Free. Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low EMI. • Excellent Current Sharing | IRF | |
IRGSL6B60KDPBF产品属性
- 类型
描述
- 型号
IRGSL6B60KDPBF
- 功能描述
IGBT 晶体管 600V UltraFast 10-30kHz
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon Technologies |
24+ |
原装 |
5000 |
原装正品,提供BOM配单服务 |
|||
24+ |
N/A |
80000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
Infineon Technologies |
23+ |
原装 |
8000 |
只做原装现货 |
|||
IR |
24+ |
TO-262-3 |
250 |
||||
Infineon Technologies |
22+ |
TO262 |
9000 |
原厂渠道,现货配单 |
|||
Infineon |
24+ |
NA |
3000 |
进口原装正品优势供应 |
|||
IR |
24+ |
NA |
68932 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
International Rectifier |
2022+ |
1 |
全新原装 货期两周 |
||||
INFINEON |
24+ |
con |
10 |
现货常备产品原装可到京北通宇商城查价格 |
|||
INFINEON |
24+ |
n/a |
25836 |
新到现货,只做原装进口 |
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DdatasheetPDF页码索引
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