型号 功能描述 生产厂家 企业 LOGO 操作

INSULATED GATE BIPOLAR TRANSISTOR

Features • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low EMI. • Excellent Current

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • TO-220 is available in PbF as a Lead-Free Benefits • Benchmark Eff

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10μs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Lead-Free Benefits • Benchmark Efficiency for Motor Control. • Ru

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10μs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Lead-Free Benefits • Benchmark Efficiency for Motor Control. • Ru

IRF

INSULATED GATE BIPOLAR TRANSISTOR

Features • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. • Lead-Free. Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low EMI. • Excellent Current Sharing

IRF

IRGS6B60KDTRRP产品属性

  • 类型

    描述

  • 型号

    IRGS6B60KDTRRP

  • 功能描述

    IGBT 模块 600V ULTRAFAST 10-30KHZ COPACK IGBT

  • RoHS

  • 制造商

    Infineon Technologies

  • 产品

    IGBT Silicon Modules

  • 配置

    Dual 集电极—发射极最大电压

  • VCEO

    600 V

  • 集电极—射极饱和电压

    1.95 V 在25

  • C的连续集电极电流

    230 A

  • 栅极—射极漏泄电流

    400 nA

  • 功率耗散

    445 W

  • 最大工作温度

    + 125 C

  • 封装/箱体

    34MM

更新时间:2025-11-19 23:00:02
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
24+
NA/
50
优势代理渠道,原装正品,可全系列订货开增值税票
IR
24+
TO-220
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
IR
03+
TO-220
380
一级代理,专注军工、汽车、医疗、工业、新能源、电力
INFINEON/英飞凌
25+
TO-220
32360
INFINEON/英飞凌全新特价IRGB6B60KDPBF即刻询购立享优惠#长期有货
IR
24+
N/A
8000
全新原装正品,现货销售
IR
25+23+
TO-220
15105
绝对原装正品全新进口深圳现货
IR
24+
TO-220
5790
只做原装假一赔十
IR
24+
TO-220AB
8866
IR
25+
TO-220
9600
百分百原装正品 真实公司现货库存 本公司只做原装 可
IR
23+
TO-220
8560
受权代理!全新原装现货特价热卖!

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