IRGS6B60KDPBF价格

参考价格:¥8.1497

型号:IRGS6B60KDPBF 品牌:IR 备注:这里有IRGS6B60KDPBF多少钱,2025年最近7天走势,今日出价,今日竞价,IRGS6B60KDPBF批发/采购报价,IRGS6B60KDPBF行情走势销售排行榜,IRGS6B60KDPBF报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRGS6B60KDPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10μs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Lead-Free Benefits • Benchmark Efficiency for Motor Control. • Ru

IRF

IRGS6B60KDPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件:316.13 Kbytes Page:15 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件:316.13 Kbytes Page:15 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR

Features • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low EMI. • Excellent Current

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • TO-220 is available in PbF as a Lead-Free Benefits • Benchmark Eff

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10μs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Lead-Free Benefits • Benchmark Efficiency for Motor Control. • Ru

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10μs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Lead-Free Benefits • Benchmark Efficiency for Motor Control. • Ru

IRF

INSULATED GATE BIPOLAR TRANSISTOR

Features • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. • Lead-Free. Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low EMI. • Excellent Current Sharing

IRF

IRGS6B60KDPBF产品属性

  • 类型

    描述

  • 型号

    IRGS6B60KDPBF

  • 功能描述

    IGBT 晶体管 600V ULTRAFAST 10-30KHZ COPACK IGBT

  • RoHS

  • 制造商

    Fairchild Semiconductor

  • 配置

    集电极—发射极最大电压

  • VCEO

    650 V

  • 集电极—射极饱和电压

    2.3 V

  • 栅极/发射极最大电压

    20 V 在25

  • C的连续集电极电流

    150 A

  • 栅极—射极漏泄电流

    400 nA

  • 功率耗散

    187 W

  • 封装/箱体

    TO-247

  • 封装

    Tube

更新时间:2025-10-4 15:22:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INTERNATIONALRECTIFIER
24+
NA
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
IR
24+
TO263
9600
原装现货,优势供应,支持实单!
IR
24+
TO263
45
原厂授权代理 价格绝对优势
Infineon Technologies
23+
D2PAK
9000
原装正品,支持实单
IR
2447
TO263
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
IR
23+
TO-263
8000
专注配单,只做原装进口现货
IR
23+
TO-263
7000
IR
21+
TO263
1709
Infineon
24+
NA
3653
进口原装正品优势供应
IR
24+
原厂正品
5850
原装正品金芯阳科技自家库存欢迎询价QQ:2698954303

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