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IRGB4B60KD1PBF价格
参考价格：￥9.0229
型号：IRGB4B60KD1PBF 品牌：IR 备注：这里有IRGB4B60KD1PBF多少钱，2025年最近7天走势，今日出价，今日竞价，IRGB4B60KD1PBF批发/采购报价，IRGB4B60KD1PBF行情走势销售排行榜，IRGB4B60KD1PBF报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRGB4B60KD1PBF | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. • Maximum Junction Temperature rated at 175°C. • Lead-Free Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Perform | IRF |   | |
IRGB4B60KD1PBF | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. • Maximum Junction Temperature rated at 175°C. • Lead-Free Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Perform | IRF | | |
IRGB4B60KD1PBF | 封装/外壳：TO-220-3 包装：卷带（TR） 描述：IGBT NPT 600V 11A TO220AB 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | Infineon 英飞凌 | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. • Maximum Junction Temperature rated at 175°C. Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH 文件：376.95 Kbytes Page：15 Pages | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. • Maximum Junction Temperature rated at 175°C. • Lead-Free Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Perform | IRF | |
IRGB4B60KD1PBF产品属性
- 类型
描述
- 型号
IRGB4B60KD1PBF
- 功能描述
IGBT 晶体管 600V Low-Vceon Non Punch Through
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
TO-220-3 |
2708 |
||||
IR |
23+ |
TO220AB |
6000 |
原装正品，支持实单 |
|||
Infineon Technologies |
23+ |
原装 |
8000 |
只做原装现货 |
|||
Infineon Technologies |
23+ |
原装 |
7000 |
||||
IR |
24+ |
TO220 |
3000 |
原装现货假一罚十 |
|||
Infineon Technologies |
24+ |
原装 |
5000 |
原装正品,提供BOM配单服务 |
|||
IR |
23+ |
TO-220 |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
24+ |
N/A |
48000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
IR |
2015+ |
TO-220AB |
12500 |
全新原装,现货库存长期供应 |
|||
Infineon Technologies |
22+ |
TO220AB |
9000 |
原厂渠道,现货配单 |
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DdatasheetPDF页码索引
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