位置：首页 > IC中文资料 > IRGR3B60KD2MOS
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Drives 1 x 70W HID lamp Overview The IRPLHID2A reference design kit consists of a complete ballast solution for a 70W HID lamp. The design contains an EMI filter, low voltage power supply, active power factor correction and a ballast control circuit using the IRS2573D. This demo board is intended to help with the evalua | IRF |   | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件：257.47 Kbytes Page：13 Pages | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Lead-Free Benefits • Benchmark Efficiency for Motor Control. • Ru | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Lead-Free Benefits • Benchmark Efficiency for Motor Control. • Ru | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Lead-Free Benefits • Benchmark Efficiency for Motor Control. • Ru | IRF | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
TO-252 |
7500 |
||||
INFINEON/英飞凌 |
2450+ |
INFINEON |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
IR |
23+ |
TO-252 |
8560 |
受权代理!全新原装现货特价热卖! |
|||
Infineon(英飞凌) |
24+ |
TO-252 |
2669 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
IR |
2023+ |
D2-PAK |
50000 |
原装现货 |
|||
Infineon Technologies |
22+ |
DPak |
9000 |
原厂渠道,现货配单 |
|||
IR |
24+ |
NA/ |
6914 |
原装现货,当天可交货,原型号开票 |
|||
IRF |
25+ |
TO252 |
4500 |
全新原装、诚信经营、公司现货销售 |
|||
IR |
15+PBF |
TO-252 |
3000 |
现货 |
|||
IR |
21+ |
SOT-252 |
10000 |
原装现货假一罚十 |
IRGR3B60KD2MOS规格书下载地址
IRGR3B60KD2MOS参数引脚图相关
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IRGR3B60KD2MOS数据表相关新闻
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属性 参数值 商品目录 IGBT管 集电极电流（Ic）（最大值） 55A 集射极击穿电压（最大值） 600V 类型 - 不同 Vge，Ic 时的 Vce（on） 2.3V @ 15V，27A 栅极阈值电压-VGE(th) 6V @ 250uA
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2020-1-12IRL2203NPBF 原装现货热卖！！！！
IRL2203NPBF 厂家：IR 封装：TO-220 现货热卖 原厂原包装，只做原装，假一赔万 !!! 欢迎致电 上海意淼张小姐 18301798078 021-61316368 QQ:2719102545
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2019-5-8
DdatasheetPDF页码索引
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