SMPS IGBT

WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE Features • NPT Technology, Positive Temperature Coefficient • Lower VCE(SAT) • Lower Parasitic Capacitances • Minimal Tail Current • HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode • Tighter Distribution of Parameters • Higher Reliability

WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE

VCES = 600V VCE(on) typ. = 2.00V @ VGE = 15V IC = 33A Equivalent MOSFET Parameters RCE(on) typ. = 61mΩ ID (FET equivalent) = 50A Features • NPT Technology, Positive Temperature Coefficient • Lower VCE(SAT) • Lower Parasitic Capacitances • Minimal Tail Current • H

WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE

文件：394.56 Kbytes Page：11 Pages

IGBT

DESCRIPTION ·Low Saturation Voltage:VCE(sat)= 2V@IC=33A ·Minimal Tail Current ·Automotive Qualified APPLICATIONS ·Automotive HEV and EV ·Welding Converters ·,PFC

SMPS IGBT

WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE Features • NPT Technology, Positive Temperature Coefficient • Lower VCE(SAT) • Lower Parasitic Capacitances • Minimal Tail Current • HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode • Tighter Distribution of Parameters • Higher Reliability