Ultra Fats IGBT

DESCRIPTION · Low Saturation Voltage:VCE(sat)= 2.14V@IC= 48A · Low Switching Losses · Ultra Low VF Hyperfast Diode APPLICATIONS · Synchronous Rectification in SMPS · Automotive Chargers · UPS,PFC · High Voltage Auxiliaries

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS

VCES = 600V IC = 48A, TC = 100°C tSC ≥ 5μs, TJ(max) = 175°C VCE(on) typ. = 1.65V Features • Low VCE (ON) Trench IGBT Technology • Low Switching Losses • Maximum Junction temperature 175 °C • 5 μS short circuit SOA • Square RBSOA • 100 of the parts tested for ILM

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS

VCES = 600V IC = 48A, TC = 100°C tSC ≥ 5μs, TJ(max) = 175°C VCE(on) typ. = 1.65V Features • Low VCE (ON) Trench IGBT Technology • Low Switching Losses • Maximum Junction temperature 175 °C • 5 μS short circuit SOA • Square RBSOA • 100 of the parts tested for ILM

采用 TO-247 封装的 600V 超快沟槽栅 IGBT 与超低 VF 二极管联合封装，适合在感应加热和软开关应用中使用

封装/外壳：TO-247-3 包装：管件 描述：IGBT TRENCH 600V 96A TO247AD 分立半导体产品 晶体管 - UGBT、MOSFET - 单

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS

封装/外壳：TO-247-3 包装：管件 描述：IGBT TRENCH 600V 96A TO247AC 分立半导体产品 晶体管 - UGBT、MOSFET - 单

Low Switching Losses

文件：255.28 Kbytes Page：10 Pages

Low Switching Losses

文件：255.28 Kbytes Page：10 Pages

4-ch Relay Output Module

文件：766.09 Kbytes Page：1 Pages

4-ch Relay Output Module

文件：328.28 Kbytes Page：1 Pages

ST7580 power line communication system-on-chip design guide

文件：6.02854 Mbytes Page：63 Pages

SAW Components Low-Loss Filter for Mobile Communication 904,5 / 925,5 MHz

文件：105.65 Kbytes Page：8 Pages

CMOS 8-INPUT NAND AND GATE

文件：182.5 Kbytes Page：10 Pages