VCES = 600V

IC = 48A, TC = 100°C

tSC ≥ 5μs, TJ(max) = 175°C

VCE(on) typ. = 1.65V

Features

• Low VCE (ON) Trench IGBT Technology

• Low Switching Losses

• Maximum Junction temperature 175 °C

• 5 μS short circuit SOA

• Square RBSOA

• 100 of the parts tested for ILM

• Positive VCE (ON) Temperature co-efficient

• Ultra-low VF Hyperfast Diode

• Tight parameter distribution

• Lead Free Package

Benefits

• Device optimized for induction heating and soft switching applications

• High Efficiency due to Low VCE(on), Low Switching Losses and Ultra-low VF

• Rugged transient Performance for increased reliability

• Excellent Current sharing in parallel operation

• Low EMI